Edge Termination Structures for 3.3 kV 4H-SiC Devices

Abstract

In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electric fields at the corners and edges of the power device, resulting in a superior breakdown voltage (BV). The simulation results demonstrate that the BV is over 3.9 kV and the sensitivity of BV to JTE dose is lower in a relatively low JTE dose condition.