The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines

Fengtao Yang, Lixin Jia, Laili Wang, Cheng Zhao, Jianpeng Wang, Tongyu Zhang, Yongmei Gan, Hong Zhang
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引用次数: 3

Abstract

SiC devices have excellent characteristics compared with silicon devices. But its superiority is not fully utilized in some occasions, where the operating ambient temperature is high, the cooling system is constricted, the high power density and decreased size is needed. In this paper, the thermal coupling effect which is vital to further improving the SiC power module in mentioned occasions is investigated by physical analytical derivation and finite element method (FEM) analysis at first. Several designing guidelines for SiC power module are presented at the view of attenuating thermal coupling effect. According to designing guidelines, a SiC-based, half bridge power module using the novel packaging structure called interleaved double-sided packaging structure is proposed. Due to the low thermal coupling effect and more balanced temperature distribution, this module features excellent thermal performance.
SiC功率模块设计指南中的热耦合效应研究
与硅器件相比,SiC器件具有优异的性能。但在某些工作环境温度高、冷却系统受限、需要高功率密度和减小体积的场合,其优势并没有得到充分发挥。本文首先通过物理解析推导和有限元分析,对上述场合下SiC功率模块的进一步改进所必需的热耦合效应进行了研究。从减小热耦合效应的角度出发,提出了SiC功率模块的设计准则。根据设计准则,提出了一种基于sic的半桥式功率模块,采用了一种新型的交叉双面封装结构。由于热耦合效应小,温度分布更均匀,因此该模块具有优异的热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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