Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Zhenyu Wang, Yunjia Li, Xiaohua Sun, Ye Liu, Zhengyun Zhu, Na Ren, Qing Guo
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引用次数: 4

Abstract

Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven’t been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VTH) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at OV. At OV gate bias, gate oxide and package degenerate more severely at $125^{\circ}{C}$ than at $25^{\circ}{C}$. The evolution of on-state resistance $(R_{DSON})$ during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes RDSON to reduce while package degradation makes RDSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.
体二极管重复浪涌电流应力下SiC沟槽MOSFET可靠性研究
虽然SiC MOSFET的主体二极管具有优异的浪涌能力,但商用SiC MOSFET在主体二极管重复浪涌电流应力下的可靠性问题尚未得到深入研究。本文对商用碳化硅沟槽MOSFET主体二极管施加重复浪涌电流应力,并在不同栅极偏置和环境温度下进行浪涌测试。研究发现,在主体二极管中没有发生双极降解,但在被测器件中观察到栅极氧化物和封装的降解现象。在室温下,与栅极氧化物降解相关的阈值电压(VTH)在负栅极偏置为-5V时比在OV时下降得更严重。在OV栅极偏压下,栅极氧化物和封装在$125^{\circ}{C}$处的简并要比$25^{\circ}{C}$处的简并严重。在测试过程中,导通电阻$(R_{DSON})$的演变受到栅极氧化物降解和封装降解之间的竞争机制的影响。因此,栅极氧化物降解使RDSON降低,而封装降解使RDSON升高。同时,竞争机制受栅极偏置电压和环境温度的影响。失效分析表明,所有被测件的失效原因都是门端和源端短路,其主要原因是结温过高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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