Luc M. van der Krabben , Rosalinda H. van Leest , Seyed Ahmad Shahahmadi , Günther M.M.W. Bissels , Jani Oksanen , Elias Vlieg , John J. Schermer
{"title":"ELO-compatible back reflectors for light management in thin-film GaAs-based LEDs","authors":"Luc M. van der Krabben , Rosalinda H. van Leest , Seyed Ahmad Shahahmadi , Günther M.M.W. Bissels , Jani Oksanen , Elias Vlieg , John J. Schermer","doi":"10.1016/j.solmat.2025.113779","DOIUrl":"10.1016/j.solmat.2025.113779","url":null,"abstract":"<div><div>With the advent of thermophotonics, interest in GaAs-based light-emitting diodes (LEDs) has recently reignited due to their potential in energy conversion applications, including the demonstration of electroluminescent cooling (ELC). To that end, the light extraction efficiency of these devices should ultimately approach unity to achieve the necessary high external quantum efficiency. This work therefore evaluates various back reflector designs on GaAs/InGaP shifted double heterojunction LEDs produced by epitaxial lift-off (ELO), targeting reduced back-side losses and improved front-side light extraction. Through optical and electrical characterization of the LEDs, the optimal back reflector design in this work was found to combine a texturing technique previously employed in ultra-thin GaAs solar cells with an omnidirectional reflector based on ZnS and Ag. This approach yields an approximately twofold enhancement in external quantum efficiency compared to a planar Ag reflector, corresponding to a tenfold improvement over comparable substrate-based LEDs. These enhancements are thoroughly analyzed in terms of the probabilities of escape and reabsorption, calculated using our in-house developed Photon Dynamics model. This model suggests that a further fourfold enhancement could be achieved by integrating a high-refractive index ZnSe dome, optimizing the rear-side dielectric, and improving the haze in reflection of the textured reflector. Beyond the potential for GaAs-based LEDs in demonstrating ELC, these advancements contribute to the broader development of thermophotonic energy conversion systems. Additionally, the presented ELO-compatible textured omnidirectional reflector offers broad applicability to III-V optoelectronic devices, including LEDs for the lighting and display industry, thermophotovoltaic devices, and ultra-thin solar cells.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113779"},"PeriodicalIF":6.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144240603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muhammad Asif , Ebrahem A. Algehyne , Fahad Maqbul Alamrani , Shahid Hussain
{"title":"Advanced graphene metamaterial design for high-efficiency terahertz wave absorption","authors":"Muhammad Asif , Ebrahem A. Algehyne , Fahad Maqbul Alamrani , Shahid Hussain","doi":"10.1016/j.solmat.2025.113781","DOIUrl":"10.1016/j.solmat.2025.113781","url":null,"abstract":"<div><div>Graphene is extensively used in photonic devices due to its various unique and extraordinary characteristics that are not familiar in conventional materials, especially its high electron mobility, ultra-thin width, functionality of integration, and excellent conductivity. In present investigation, we demonstrated a patterned graphene-based terahertz (THz) metamaterial absorber with combination of different materials, gold, silicon, stacked graphene, polymethyl methacrylate and strip patterned graphene layers, all differentiated by insulating dielectric layer. According to simulation results, this THz broadband absorber demonstrated polarization, electromagnetic field interaction, angle insensitive properties and almost perfect broadband absorption. The base of a structure is composition of various materials stacking on one another. The proposed absorber described more than 95 % absorption from 3.0 to 10 THz, 98.5 % maximum absorption at 7.1 THz and 97.6 % average absorption for 7.0 THz bandwidth. The structure has a decent bearing angle in a wide range of 0°–70° and has angle insensitive s- and p-polarization. Additionally, by modifying the layers and geometrical parameters, the absorption properties can be refined. This suggested absorber can be used in optoelectronic devices, photodetectors, and photosensors based on aforementioned findings.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113781"},"PeriodicalIF":6.3,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144240601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tao Xue , Shuangpeng Li , Yuchang Chen , Xiao Wang , Pengfei Zhang , Kunping Guo , Fanghui Zhang
{"title":"Electron beam evaporated SiO2 interfacial layer for improved CsPbI3-xBrx perovskite solar cells","authors":"Tao Xue , Shuangpeng Li , Yuchang Chen , Xiao Wang , Pengfei Zhang , Kunping Guo , Fanghui Zhang","doi":"10.1016/j.solmat.2025.113772","DOIUrl":"10.1016/j.solmat.2025.113772","url":null,"abstract":"<div><div>Perovskite solar cells (PSCs) have demonstrated significant advances in efficiency, yet issues such as interfacial defects and poor long-term stability remain significant barriers to their practical application. All-inorganic CsPbI<sub>3-x</sub>Br<sub>x</sub> perovskites exhibit enhanced thermal and photostability, but still suffer from severe interfacial non-radiative recombination, limiting overall device performance. In this work, we introduced a SiO<sub>2</sub> interfacial modification layer prepared via electron beam evaporation between the TiO<sub>2</sub> electron transport layer and the perovskite absorber. The introduced SiO<sub>2</sub> layer significantly improved surface wettability, enabling uniform crystallization of the perovskite films, and efficiently passivated interfacial defects, resulting in reduced interfacial recombination and enhanced photovoltaic performance. The optimized SiO<sub>2</sub>-modified device achieved a power conversion efficiency (PCE) of 13.3 %, a notable improvement over the 10.4 % of the control device, primarily due to enhanced open-circuit voltage and fill factor. Moreover, these SiO<sub>2</sub>-modified PSCs exhibited significantly enhanced ambient stability without encapsulation. This study highlights electron beam evaporation as a simple, cost-effective, and promising approach for improving the efficiency and stability of CsPbI<sub>3-x</sub>Br<sub>x</sub> perovskite solar cells.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113772"},"PeriodicalIF":6.3,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144231284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sébastien Dubois , Wei Han , Nicolas Enjalbert , Adrien Danel , Yichun Wang
{"title":"Spatial distribution of dopants and oxygen-related defects in antimony-doped Czochralski silicon","authors":"Sébastien Dubois , Wei Han , Nicolas Enjalbert , Adrien Danel , Yichun Wang","doi":"10.1016/j.solmat.2025.113775","DOIUrl":"10.1016/j.solmat.2025.113775","url":null,"abstract":"<div><div>Antimony (Sb)-doped Czochralski (Cz)-grown silicon (Si) wafers would feature superior performances in comparison with the conventional phosphorus (P)-doped wafers and start to be deployed into mass production. However, published studies about the properties of Sb-doped wafers for solar cells are rather scarce. This work investigates the spatial (i.e., axial and radial) distributions of Sb, interstitial oxygen (O<sub>i</sub>) and oxygen thermal donors (TD), in Sb-doped Cz ingots processed with melt recharging (RCz), focusing on wafers representative of the whole RCz cycle. This study confirmed first the interest in Sb-doping for obtaining Si ingots and wafers with a controlled and narrowed resistivity range. Furthermore, the studied wafers featured low as-grown TD concentrations, low enough not to affect the bulk carrier lifetime (τ<sub>b</sub>). Results also showed that Sb-doping does not significantly influence the TD formation kinetics. Last, the studied wafers featured relatively low O<sub>i</sub> concentrations ([O<sub>i</sub>]) below 7 × 10<sup>17</sup> cm<sup>−3</sup> for most samples, with rather flat [O<sub>i</sub>] radial profiles. As these Sb-doped samples also presented low Thermal History Index values, they should not be prone to O-related defects-induced τ<sub>b</sub> degradations during high temperature steps.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113775"},"PeriodicalIF":6.3,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144240486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shihe Pan , Yixin Sun , Xiaoquan Liu, Xiaoqi Zhou, Shipei Zhang, Shengyu Sun, Xiawa Wang
{"title":"Design and optimization of infrared radiation barrier using omnidirectional reflectors","authors":"Shihe Pan , Yixin Sun , Xiaoquan Liu, Xiaoqi Zhou, Shipei Zhang, Shengyu Sun, Xiawa Wang","doi":"10.1016/j.solmat.2025.113760","DOIUrl":"10.1016/j.solmat.2025.113760","url":null,"abstract":"<div><div>In this work, we designed and optimized a one-dimensional (1D) photonic crystal (PhC) for the application of a thermal radiation barrier. The insulation relies on the omnidirectional bandgap to reflect electromagnetic radiation regardless of its incident angle and polarization. As thermal radiation has a broadband spectrum that depends on both wavelength and angle, a cascaded and differentiated waveband design was utilized. The optimized omnidirectional reflector (ODR) is composed of germanium (Ge) and magnesium fluoride (MgF<sub>2</sub>), consisting of 4 differentiated patterns with 2 periods each to have the maximum insulation performance within reasonable fabrication costs. For a 1200 K blackbody radiator, the heat retaining rate can reach 93.5 % within a thickness of 13 μm. We analyzed the role of each pattern and substantiated the methodology of differentiated waveband design, which can be generalized to other photonic designs for thermal insulation. We further assessed potential uncertainties induced by fabrication processes and material properties. The reflector can retain above 90 % of the radiative heat from high-temperature sources when the thickness variation is within 13 % of the designed values, even incorporating the largest optical constant differences used in this work. The broadband ODR with a differentiated design may provide an optimal solution to insulate radiative heat for ultra-high temperature and small-scale heat sources, surpassing conventional solutions provided by metallic coating or multilayer insulation.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113760"},"PeriodicalIF":6.3,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144223659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Max Ailinger, Karim Abdel Aal, Norbert Willenbacher
{"title":"Rheology and fine-line screen printing of solar cell front-side metallization pastes – What really matters","authors":"Max Ailinger, Karim Abdel Aal, Norbert Willenbacher","doi":"10.1016/j.solmat.2025.113763","DOIUrl":"10.1016/j.solmat.2025.113763","url":null,"abstract":"<div><div>Current solar research focuses on reducing silver consumption in order to enable the large-scale increase in PV installations needed to address climate change and the growing global energy demand. This study explores how rheological properties of metallization pastes, such as yield stress, high shear viscosity, slip stress, and slip velocity, affect fine-line screen printing outcomes, including line width, height, uniformity, and interruptions. A model system based on capillary suspensions using Texanol as bulk liquid and employing four secondary liquids with varying interfacial tension was developed for systematic paste property variations. The resulting capillary suspensions exhibited a yield stress and pronounced wall slip below the yield stress, with the slip layer consisting of the bulk liquid. Particle volume fraction, secondary liquid to particle ratio, and type of secondary liquid were varied to systematically modify yield stress, high shear viscosity, and slip velocity of the pastes. Printing experiments revealed that higher yield stress reduced spreading but maintained similar paste laydown. High shear viscosity was identified as critical for controlling paste transfer and achieving narrow line widths. Excessive slip caused inhomogeneous line morphology and reduced paste transfer, indicating an optimal slip range for high-quality printing. These findings were applied to develop a metallization paste achieving a 24 μm line width and 0.48 aspect ratio, achieving an efficiency of 23.53 % for PERC cells with 16 % lower laydown than commercial pastes. This study highlights the importance of yield stress, viscosity, and slip in screen printing, aiding future paste development to reduce silver consumption in photovoltaics.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113763"},"PeriodicalIF":6.3,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144211829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yiling Li , Aleksandr Shkatulov , Marc Linder , Micha Schaefer , Benwen Li , André Thess
{"title":"Enhancing reactivity of Na2Zn(SO4)2 hydrates by doping for thermochemical energy storage","authors":"Yiling Li , Aleksandr Shkatulov , Marc Linder , Micha Schaefer , Benwen Li , André Thess","doi":"10.1016/j.solmat.2025.113753","DOIUrl":"10.1016/j.solmat.2025.113753","url":null,"abstract":"<div><div>The thermochemical properties of Na<sub>2</sub>Zn(SO<sub>4</sub>)<sub>2</sub> are systematically analyzed under dynamic conditions at various partial vapor pressures ranging from 50 mbar to 700 mbar, aiming to evaluate its potential as a material for Thermochemical Energy Storage (TCES). At 50 mbar, dehydration to Na<sub>2</sub>Zn(SO<sub>4</sub>)<sub>2</sub> starts at ∼94.5 °C and rehydration begins at 60.6 °C. At 700 mbar, onset temperatures shift to 105 °C for dehydration and 117.9 °C for hydration. Na<sub>2</sub>Zn(SO<sub>4</sub>)<sub>2</sub> exhibits a favorable charging temperature interval and high cycle stability during the transition from dihydrate to anhydrate, indicating its promise for TCES applications. The introduction of dopants significantly influences system performance, resulting in: (a) a reduction in dehydration onset temperatures by 7–20 °C; (b) an increase in hydration onset temperatures by 3–7 °C; (c) complete vapor uptake reaching the stoichiometric 2 mol H<sub>2</sub>O/mol Na<sub>2</sub>Zn(SO<sub>4</sub>)<sub>2</sub>; and (d) shorter induction times with accelerated reaction kinetics. LiCl-doped samples also show improved stability and reduced mass loss over multiple hydration cycles. However, the complete hydration of tetrahydrate is not fully achieved, suggesting a need for further investigation into optimal dopant compositions and their effects on hydration kinetics. Overall, addressing thermodynamic challenges and optimizing hydration processes position Na<sub>2</sub>Zn(SO<sub>4</sub>)<sub>2</sub>·2H<sub>2</sub>O as a potential candidate for efficient and sustainable thermal energy storage, contributing to advancements in the field of TCES.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113753"},"PeriodicalIF":6.3,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144204692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuqiu Ye , Yanfang Zhou , Ye Wang , Bram Hoex , Xiaogang Zhu , Daoyuan Chen , Wenjuan Xue , Tiantian Wei , Bin Chen , Meng Cheng , Jiayan Lu , Haipeng Yin , Zi Ouyang
{"title":"Damp-heat stability investigation of glass-backsheet modules based on TOPCon solar cells","authors":"Yuqiu Ye , Yanfang Zhou , Ye Wang , Bram Hoex , Xiaogang Zhu , Daoyuan Chen , Wenjuan Xue , Tiantian Wei , Bin Chen , Meng Cheng , Jiayan Lu , Haipeng Yin , Zi Ouyang","doi":"10.1016/j.solmat.2025.113764","DOIUrl":"10.1016/j.solmat.2025.113764","url":null,"abstract":"<div><div>Tunnel oxide passivated contact (TOPCon) solar cells, fabricated using highly reactive silver-aluminium (Ag-Al) paste, are prone to degradation via corrosion when exposed to water vapour and acidic environments. Meanwhile, single-glass (SG) photovoltaic modules conventionally employ polymer-based backsheets that exhibit elevated water vapour transmission rates. This study presents a systematic analysis of the effects of backsheet, metallic paste, encapsulant, and cell spacing on the damp-heat (DH) resilience of SG modules. The investigation ranks the relative impact of these factors on the DH endurance of glass-backsheet modules as follows: backsheet/front metallisation > encapsulant > cell spacing. Notably, modules incorporating an Al composite backsheet with a water permeation rate of 0.01 g/m<sup>2</sup>/day demonstrated superior DH endurance, whereas modules with a backsheet permitting 0.5 g/m<sup>2</sup>/day water permeation exhibited a 0.5 % decrease in power loss post-DH1000 ageing relative to conventional polymer backsheets (KPf). A prominent increase in the front finger contact resistance by an order of magnitude was observed post-corrosion. Mitigation strategies include reducing the Al content in metallisation pastes and employing advanced metallisation processes to enhance corrosion resistance. Lower acidic concentrations in the encapsulation film correlate with reduced corrosion. White ethylene-vinyl acetate encapsulants allow for the incorporation of more alkaline additives, decreasing film acid concentration, thereby enhancing DH endurance. With manufacturability and cost effectiveness in consideration, the optimised TOPCon single-glass modules have a post-DH2000 power loss of only 2.37 %, demonstrating a relatively superior level of DH endurance.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113764"},"PeriodicalIF":6.3,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144204691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of a characterization technique to effectively detect latent insulation defects in the field-deployed PV modules","authors":"E.R. Anagha , S.V. Kulkarni , Narendra Shiradkar","doi":"10.1016/j.solmat.2025.113761","DOIUrl":"10.1016/j.solmat.2025.113761","url":null,"abstract":"<div><div>—Backsheet defects in field-deployed photovoltaic (PV) modules can cause inverter tripping and electrical hazards. In this paper, it is shown that certain backsheet defects can be latent and are likely to be missed by variants of dry/wet insulation resistance tests if they are applied to field-deployed modules. These latent defects can be difficult to detect visually, can show seasonality, and also pose a challenge in identifying safe modules for potential reuse applications. A new characterization test is developed that can accurately identify the latent insulation defects in field-deployed modules that currently cannot be reliably captured by any of the available tests in PV module qualification/safety standards. Detailed Finite Element Method (FEM) simulations are performed to explain the fundamental working principles for the new test, and results of applying it on good as well as defective modules are presented. It is shown that the new test is significantly more effective than a variant of the typically used dry insulation resistance test in identifying latent insulation defects. The test is developed in such a way that it provides a reasonably high throughput and has the potential to become a benchmark test for detecting latent defects in the insulation of field-deployed PV modules.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113761"},"PeriodicalIF":6.3,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144211993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Genç , J. Hurni , S. Libraro , C. Allebé , B. Paviet-Salomon , C. Ballif , A. Morisset , F.-J. Haug
{"title":"Co-annealing of PECVD boron emitters and poly-Si passivating contacts for leaner TOPCon solar cell fabrication","authors":"E. Genç , J. Hurni , S. Libraro , C. Allebé , B. Paviet-Salomon , C. Ballif , A. Morisset , F.-J. Haug","doi":"10.1016/j.solmat.2025.113713","DOIUrl":"10.1016/j.solmat.2025.113713","url":null,"abstract":"<div><div>This study investigates the feasibility of a single-step annealing process for tunnel oxide passivating contact (TOPCon) solar cell fabrication to replace the conventional two-step approach. We present a novel method using a single thermal treatment to simultaneously form the boron emitter at the front and poly-Si-based passivating contact at the rear of the device. Both are based on layers deposited by plasma-enhanced chemical vapor deposition (PECVD). First, we tailor the boron emitter profile. We achieved boron emitter profiles with surface concentrations ranging from <span><math><mrow><mn>3</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>19</mn></mrow></msup><mtext>to</mtext><mn>1</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>20</mn></mrow></msup><msup><mrow><mtext>cm</mtext></mrow><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></math></span> and depths between 100 and 600 nm by adjusting the deposition parameters and annealing conditions. Secondly, we show that <span><math><mi>n</mi></math></span>-type poly-Si layers are suitable for co-annealing when an additional N<sub>2</sub>O plasma treatment is applied to tunnel oxide formed by exposure to UV-O<sub>3</sub>. This approach enables the achievement of <span><math><mrow><mi>i</mi><msub><mrow><mi>V</mi></mrow><mrow><mi>o</mi><mi>c</mi></mrow></msub></mrow></math></span> up to 720 mV and contact resistivity <span><math><mrow><mo>≤</mo><mn>100</mn><mstyle><mi>m</mi><mi>Ω</mi></mstyle><mspace></mspace><msup><mrow><mstyle><mi>c</mi><mi>m</mi></mstyle></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span>. Finally, we demonstrate the viability of the co-annealing process with a proof-of-concept solar cell, which shows a promising power conversion efficiency of 21%.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"292 ","pages":"Article 113713"},"PeriodicalIF":6.3,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144195758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}