2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)最新文献_第6页

The stability of metallized, thin, flexible III–V structures for high temperature applications and wafer bonding 金属化，薄，柔性III-V结构的稳定性，适用于高温应用和晶圆键合

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356355

T. Bai, B. Beekley, M. Jackson, M. Goorsky

{"title":"The stability of metallized, thin, flexible III–V structures for high temperature applications and wafer bonding","authors":"T. Bai, B. Beekley, M. Jackson, M. Goorsky","doi":"10.1109/PVSC.2015.7356355","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356355","url":null,"abstract":"The stability of thin, flexible III-V layers / solar cells with metallization was addressed. Reduced cell thickness (reduced weight) places added constraints on metallization sequences, thicknesses, and thermal budgets for these cells. We subjected a structure of a thin (few μm) III-V layers (the focus here is on InP-based structures) with metallization backing (Au, Ni, and Cu-based metallizations, several μm thick) to annealing at 200 °C, 300 °C, or 400 °C for up to a twelve hours. X-ray diffraction is a particularly useful technique as measurements from the solar cell (semiconductor) side of the stack also reveals the metallization diffraction peaks and hence any reaction byproducts. This is due to the beam penetration through the few μm thick cell layers. After 200 °C for twelve hours, x-ray diffraction and transmission electron microscopy indicate reactions between the metal layers in the stack but the semiconductor is unchanged. After 300 °C, twelve hours, there is more extensive intermetallic compound formation. However, after annealing at 400 °C, twelve hours, the III-V layer is entirely consumed. In contrast, when much thicker cells / semiconductor layers are subject to similar annealing conditions, there may not be a significant impact on performance because only a few μm of the total cell thickness is consumed. When the total thickness is only a few μm, however, the reaction between the metal contact layer and the semiconductor leads to consumption of the entire device. These results demonstrate that (i) the total cell thickness is important when considering contact-semiconductor interactions at elevated operating or processing temperatures and (ii) x-ray diffraction through the thin cell provides a detailed assessment of reactions; it can be utilized for any combination of thin film solar cell and metallization.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128289325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast photocarrier transport dynamics in InAs/GaAs quantum dot superlattice solar cell InAs/GaAs量子点超晶格太阳能电池的超快光载流子输运动力学

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355965

Taizo Tanibuchi, T. Kada, N. Kasamatsu, T. Matsumura, S. Asahi, T. Kita

引用次数: 0

Analyses of diamond wire sawn wafers: Effect of various cutting parameters 金刚石线锯片的分析:不同切割参数的影响

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356033

B. Sopori, P. Basnyat, S. Devayajanam, Rekha R. Schnepf, S. Sahoo, J. Gee, Ferdinando Severico, A. Manens, H. Seigneur, W. Schoenfeld, Steve Preece

引用次数: 16

Performance restoration of dusty photovoltaic modules using electrodynamic screen 利用电动筛网恢复积尘光伏组件的性能

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356134

A. Sayyah, M. Horenstein, M. Mazumder

{"title":"Performance restoration of dusty photovoltaic modules using electrodynamic screen","authors":"A. Sayyah, M. Horenstein, M. Mazumder","doi":"10.1109/PVSC.2015.7356134","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356134","url":null,"abstract":"Dust accumulation on optical surfaces of solar collectors is been known to cause significant losses in energy yield. The most commonly-practiced methods of cleaning solar collectors use water-based agents. This paper, however, addresses the mitigation of soiling losses on a photovoltaic cell using the electrodynamic screen (EDS) in a laboratory environment. A model for the EDS model with two stacked layers of transparent dielectric coatings is developed using finite element analysis (FEA) software, and the behavior of the electric field on the EDS surface is thoroughly examined. For the reported experiments, an EDS sample has been integrated into a PV cell for dust mitigation. Experimental results show the restoration of the short-circuit current (Isc) to more than 90% of the pre-dust value after 10 trials using standard test dust and EDS cleaning. The tests were conducted in an environmentally-controlled chamber at various applied voltages and inclination angles. In some cases, dust coagulations were observed after several cleaning cycles. To evaluate the performance of the EDS in dust-particle removal, we have studied the particle size distribution on the EDS surface after each dust deposition and cleaning cycle using a custom-built dust-deposition analyzer.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128665372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Novel SiC encapsulated coaxial silicon nanowire solar cell for optimal photovoltaic performance 新型碳化硅封装同轴硅纳米线太阳能电池，具有最佳的光伏性能

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355933

R. Pandey, R. Chaujar

引用次数: 5

Technical evaluation of the 15% of peak load PV interconnection screen 15%峰值负荷光伏互联屏技术评价

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356168

M. Reno, R. Broderick

引用次数: 9

Encapsulated photovoltaic blankets and modules for deployable solar arrays 用于可展开太阳能电池阵列的封装光伏毯和模块

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356140

Matthew Wrosch, N. Walmsley

引用次数: 0

Design and implementation of a low cost Solar Panel emulator 低成本太阳能板模拟器的设计与实现

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356274

A. Sanaullah, H. Khan

引用次数: 17

Strategies for designing high efficient thin-film amorphous silicon solar cells 高效薄膜非晶硅太阳能电池的设计策略

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355793

A. Ghahremani, A. Fathy

引用次数: 2

Multi-resonant light trapping: New paradigm, new limits 多共振光捕获:新范例，新限制

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356159

S. Collin, J. Goffard, A. Cattoni, Clément Colin, C. Sauvan, P. Lalanne, J. Guillemoles

引用次数: 2