{"title":"新型碳化硅封装同轴硅纳米线太阳能电池，具有最佳的光伏性能","authors":"R. Pandey, R. Chaujar","doi":"10.1109/PVSC.2015.7355933","DOIUrl":null,"url":null,"abstract":"In this paper, SiC encapsulated coaxial silicon (p-i-n) nanowire solar cell consisting of anti-reflective passivation layer (ARPL) has been designed and simulated. Photo reflectance is significantly reduced in the UV/visible spectral region due to the presence of SiC. The external quantum efficiency EQE>60% in the spectrum range of 325-625 nm wavelength and short circuit current density (Jsc), 26 mA.cm-2 as well as open circuit voltage (Voc), 291 mV has been observed. This results in 19% and 26% higher JSC and power conversion efficiency (PCE) compared to conventional SiO2 passivated coaxial nanowire silicon solar cell. Under one sun illumination (0.1 W/cm2), 4.3% PCE is achieved in SiC encapsulated coaxial silicon nanowire solar cell having the diameter and length of 300nm, 5.1μm respectively. Result indicates, SiC plays an important role in the photoelectric conversion. All the simulations have been done using calibrated software program in Silvaco atlas and devedit device simulator.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Novel SiC encapsulated coaxial silicon nanowire solar cell for optimal photovoltaic performance\",\"authors\":\"R. Pandey, R. Chaujar\",\"doi\":\"10.1109/PVSC.2015.7355933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, SiC encapsulated coaxial silicon (p-i-n) nanowire solar cell consisting of anti-reflective passivation layer (ARPL) has been designed and simulated. Photo reflectance is significantly reduced in the UV/visible spectral region due to the presence of SiC. The external quantum efficiency EQE>60% in the spectrum range of 325-625 nm wavelength and short circuit current density (Jsc), 26 mA.cm-2 as well as open circuit voltage (Voc), 291 mV has been observed. This results in 19% and 26% higher JSC and power conversion efficiency (PCE) compared to conventional SiO2 passivated coaxial nanowire silicon solar cell. Under one sun illumination (0.1 W/cm2), 4.3% PCE is achieved in SiC encapsulated coaxial silicon nanowire solar cell having the diameter and length of 300nm, 5.1μm respectively. Result indicates, SiC plays an important role in the photoelectric conversion. All the simulations have been done using calibrated software program in Silvaco atlas and devedit device simulator.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7355933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7355933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel SiC encapsulated coaxial silicon nanowire solar cell for optimal photovoltaic performance
In this paper, SiC encapsulated coaxial silicon (p-i-n) nanowire solar cell consisting of anti-reflective passivation layer (ARPL) has been designed and simulated. Photo reflectance is significantly reduced in the UV/visible spectral region due to the presence of SiC. The external quantum efficiency EQE>60% in the spectrum range of 325-625 nm wavelength and short circuit current density (Jsc), 26 mA.cm-2 as well as open circuit voltage (Voc), 291 mV has been observed. This results in 19% and 26% higher JSC and power conversion efficiency (PCE) compared to conventional SiO2 passivated coaxial nanowire silicon solar cell. Under one sun illumination (0.1 W/cm2), 4.3% PCE is achieved in SiC encapsulated coaxial silicon nanowire solar cell having the diameter and length of 300nm, 5.1μm respectively. Result indicates, SiC plays an important role in the photoelectric conversion. All the simulations have been done using calibrated software program in Silvaco atlas and devedit device simulator.
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