2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)最新文献_第7页

A convergence algorithm for maximum power point tracking of photovoltaic arrays with bypass diodes 旁路二极管光伏阵列最大功率点跟踪的收敛算法

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356293

Brandon Contino, Guangyong Li

引用次数: 0

Theoretical exploration of Cd-free CIGS solar cells with a charged tunneling electron collector layer 带电荷隧道电子集电极层的无镉CIGS太阳能电池的理论探索

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355886

W. Xu, C. Ke, S. Venkataraj, J. Wong, R. Stangl

引用次数: 0

Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures 显著提高了CdTe/MgCdTe双异质结构的载流子寿命，降低了界面复合速度

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356225

Shi Liu, Xin-Hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-Hang Zhang

引用次数: 3

Modeling and simulation of CZTS/CTS tandem solar cell using wxAMPS software 利用wxAMPS软件对CZTS/CTS串联太阳能电池进行建模与仿真

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355783

M. Olopade, O. Oyebola, A. Adewoyin, David O. Emi-Johnson

引用次数: 3

Evaluation of metal oxides prepared by reactive sputtering as carrier-selective contacts for crystalline silicon solar cells 反应溅射制备的金属氧化物作为晶体硅太阳能电池载流子选择性触点的评价

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356167

M. Boccard, L. Ding, Priyaranga Koswatta, M. Bertoni, Z. Holman

{"title":"Evaluation of metal oxides prepared by reactive sputtering as carrier-selective contacts for crystalline silicon solar cells","authors":"M. Boccard, L. Ding, Priyaranga Koswatta, M. Bertoni, Z. Holman","doi":"10.1109/PVSC.2015.7356167","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356167","url":null,"abstract":"With high quality silicon wafers nowadays available at a low cost, further technology improvement relies on the development of inexpensive and highly efficient carrier-selective contacts (CSC). To this respect, evaporated MoOx hole-selective contacts recently brought some attention due to impressive transparency and carrier selectivity properties, and other materials are widely studied in other photovoltaics technologies (TiO2, WO3, V2O5, ...). Compared to standard heterojunction devices using amorphous silicon as passivating layer and CSC, reported efficiencies for devices using evaporated MoOx layers still fall short due to carrier extraction or recombination issues. Whereas little room for maneuver is foreseen to tune the properties of evaporated metal oxide layers, reactive sputtering on the other hand is expected to allow manipulating the work-function of metal oxides. We will review in this presentation the potential of using reactively sputtered metal-oxides as CSC in c-Si solar cells. Preliminary results obtained with MoOx indicate that decreasing the oxidation state of the layer yields better transport properties but poorer selectivity. Also, though a drastic drop in lifetime was observed after sputtering a MoOx layer on a passivating a-Si layer, annealing enabled a recovery of most of the lifetime.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Cost, performance, and yield comparison of eight different micro-inverters 八种不同微型逆变器的成本、性能和产量比较

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355821

S. Krauter, J. Bendfeld

引用次数: 8

Epitaxial growth and layer transfer of InP via electrochemically etching / annealing of porous buried InP layers: A pathway for III–V substrate re-use 通过电化学蚀刻/退火的多孔埋藏InP层的外延生长和层转移:III-V衬底再利用的途径

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356347

X. Kou, M. Goorsky

引用次数: 0

Large performance improvement in Cu2ZnSnSe4 based solar cells by surface engineering with a nanometric Ge layer 纳米锗层表面工程对Cu2ZnSnSe4基太阳能电池性能的巨大改善

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7356377

S. Giraldo, M. Neuschitzer, S. López‐Mariño, Y. Sánchez, H. Xie, M. Colina, M. Placidi, P. Pistor, V. Izquierdo‐Roca, A. Pérez‐Rodríguez, E. Saucedo

{"title":"Large performance improvement in Cu2ZnSnSe4 based solar cells by surface engineering with a nanometric Ge layer","authors":"S. Giraldo, M. Neuschitzer, S. López‐Mariño, Y. Sánchez, H. Xie, M. Colina, M. Placidi, P. Pistor, V. Izquierdo‐Roca, A. Pérez‐Rodríguez, E. Saucedo","doi":"10.1109/PVSC.2015.7356377","DOIUrl":"https://doi.org/10.1109/PVSC.2015.7356377","url":null,"abstract":"This work presents a radically new approach based on the application of very small Ge quantities on the CZTSe surface (from 1 nm to 25 nm thick Ge layers), allowing for a liquid assisted improved crystallization due to the formation of a Ge-Se (Se-rich) liquid phase. This modification improves the charge transport properties at this interface and consequently the device's voltage and electro-optical properties in general. Using TEM and TOF-SIMS we demonstrate that Ge is barely incorporated into the absorber; nevertheless we observe a drastic increase of the VOC of the solar cells (from 405 mV for the reference to 470 mV for the best Ge modified one). This in turn has a large impact on the performance, increasing it from 7.0% (reference) to 10.1% (Ge modified), which sets a new record efficiency for a Ge containing kesterite and a VOC among the highest obtained for Se-based kesterite solar cells. First characterizations indicate that this is related to an improved grain growth assisted via Ge-Se liquid phases, the minimization of Sn-reduced species and the formation of Ge-O nano-clusters. Our approach not only allows to go towards high efficiency concepts and to contribute to solve the voltage deficit problems in kesterites, but also opens new perspectives for the possible band-gap engineering of kesterite devices with very low Ge concentrations.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121391956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Concept of a split tandem photovoltaic window 分体式串联光伏窗的概念

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355633

M. Jobin, Cédric Pellodi

引用次数: 0

High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production 用于大面积薄层生产在线监测的高速光谱椭偏技术

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI: 10.1109/PVSC.2015.7355640

C. Major, G. Juhász, Z. Lábadi, M. Fried

引用次数: 2