显著提高了CdTe/MgCdTe双异质结构的载流子寿命，降低了界面复合速度

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-06-14 DOI:10.1109/PVSC.2015.7356225

Shi Liu, Xin-Hao Zhao, Calli M. Campbell, Maxwell B. Lassise, Yuan Zhao, Yong-Hang Zhang

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引用次数: 3

摘要

采用30 nm Mg0.48Cd0.52Te势垒，CdTe/MgCdTe双异质结构的载流子寿命显著提高至2.1 μs。温度相关的光致发光测量表明，室温下的辐射复合对总复合有显著贡献，内部量子效率估计为40%。因此，计算出辐射和非辐射寿命分别为5.25 μs和3.5 μs。CdTe/Mg0.48Cd0.52Te的界面复合速度小于2.7 cm/s，较GaAs/AlGaAs和GaAs/Ga0.5In0.5P双异质结构的最佳复合速度更好或非常接近。

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Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg_0.48Cd_0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg_0.48Cd_0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga_0.5In_0.5P double heterostructures.

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2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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