2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

{"title":"Blue phosphorescent organic light-emitting diode with triazole host achieving high current efficiency","authors":"Yi-Hsin Lan, Y. Bai, Nai-Jing Chen, Jau-Jiun Huang, B. Lin, C. Hsiao, M. Leung, M. Wei, Chi-feng Lin, Tien‐Lung Chiu, Jiu-Haw Lee","doi":"10.1109/AM-FPD.2016.7543631","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543631","url":null,"abstract":"We demonstrated a blue phosphorescent organic light-emitting diode with the maximum current efficiency and power efficiency of 57.4 cd/A and 51.6 lm/W, respectively, based on trizaole derivatives as the host of the emitting layer.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131035502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature poly-Si TFTs with sputtered HfO2 gate stack on glass substrate","authors":"A. Hara, Tatsuya Meguro","doi":"10.1109/AM-FPD.2016.7543659","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543659","url":null,"abstract":"We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO₂ gate dielectric on a nonalkaline glass substrate. The obtained field-effect mobility of CLC LT poly-Si TFTs with a HfO₂ gate stack was 180 cm²/V s. However, the mobility of the HfO₂ gate stack is lower than that of the PECVD-SiO₂ gate stack. It was concluded that this is caused by scattering at defects and imperfections of both the inter layer (IL) SiO₂ and the IL-SiO₂/Si interface, but not by remote scattering from the high-k dielectric.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133045223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen partial pressure and annealing temperature influence on the performance of back-channel-etch zinc tin oxide thin film transistors","authors":"Yuxiang Xiao, Xiang Xiao, Letao Zhang, Xin Ju, Hongjuan Lu, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543643","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543643","url":null,"abstract":"Zinc tin oxide (ZTO) thin film transistors (TFTs) with back-channel-etch (BCE) structure are demonstrated. The influence of oxygen partial pressure during ZTO layer sputtering is discussed and an optimal O2/Ar ratio of 1% is achieved. The effect of annealing temperature is studied and the device annealed at 300°C performs well. The wet etching of Mo source/drain electrodes is carried out in Mo etchant which shows little damage to ZTO layer. The BCE ZTO TFT exhibits a field effect mobility of 1.88 cm2V-1s-1, a subthreshold slope of 0.37V/decade, and an on-off current ratio larger than 107. The comparable performances between BCE ZTO TFT and lift-off ZTO TFT indicate back-channel-etch ZTO TFT is a feasible technique and suitable for mass production.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115348702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors","authors":"S. Shaari, S. Naka, H. Okada","doi":"10.1109/AM-FPD.2016.7543650","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543650","url":null,"abstract":"We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116317843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronic properties and photo-physics of large grain hybrid perovskites","authors":"A. Mohite, W. Nie, J. Blancon, H. Tsai, Gautam Gupta","doi":"10.1109/AM-FPD.2016.7543615","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543615","url":null,"abstract":"Organic-Inorganic or (Hybrid) perovskites are a special class of perovskites with a general chemical formula of AMX3 formed by using low-temperature synthesis approaches. They exhibit exceptional fundamental properties that have been translated into proof-of-principle demonstrations of photovoltaics (1), light emitting diodes(2), photodetectors(3), thermoelectric devices, lasers(4), photo-catalysts(5) and gamma ray detectors(6, 7) among which energy harvesting in photovoltaics has been the most studied(1, 8-15). While tremendous progress is being made, a fundamental bottleneck in that has existed in field is the high degree of variability in crystalline quality, grain-size, and microstructure of hybrid perovskites reported by the community. This has resulted in multiple interpretations of experimental data and thus key fundamental mechanisms remain largely unresolved. An ideal solution to this issue of non reliable properties is the ability to reproducibly grow hybrid perovskite thin-films with high degree of crystallinity, which allow access to the intrinsic physical properties, which are otherwise masked by non-reliable processing dependent microstructure. Here we present our recently developed fast thin-film crystal growth technique termed as hot-casting, which allows us to grow high crystalline quality, uniform, pinhole free films of hybrid perovskites with hundreds of microns to mm-scale grain-size. Investigation of photo-physical properties reveals that the resulting large grains behave as classical III-V direct band-gap semiconductors. However, as the grain-size decreases, the properties can no longer be described using models described for direct gap semiconductors. When incorporated into a simple \"inverted\" photovoltaic bilayer architecture with ITO/PEDOT:PSS/Perovskite/PCBM/Al, with no minimal optimization a hysteresis free device with a current-voltage curve of 15.37%. Electrical characterization using capacitance-voltage measurements and light-intensity dependence of the open circuit voltage suggest that perovskite films are intrinsic and the photogenerated charge carrier recombine through a bimolecular process, only observed in high quality semiconducting materials.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124711920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Perovskite/p-type crystal silicon tandem solar cells","authors":"H. Kanda, A. Uzum, H. Nishino, S. Ito","doi":"10.1109/AM-FPD.2016.7543683","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543683","url":null,"abstract":"In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121589063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reduction of graphene oxide by atomic hydrogen annealing","authors":"A. Heya, N. Matsuo","doi":"10.1109/AM-FPD.2016.7543614","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543614","url":null,"abstract":"Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114706660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance low-temperature p-channel polycrystalline-germanium thin-film transistors via continuous wave laser crystallization","authors":"C. Wu, Yi-Shao Li, C. Chou, Huang-Chung Cheng","doi":"10.1109/AM-FPD.2016.7543639","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543639","url":null,"abstract":"The continuous wave laser crystallization (CLC) has been considered as a suitable approach to achieve the high-quality Ge films. In order to further overcome the hole concentration of Ge thin films resulting from the acceptor-like defects, the counter-doping (CD) process with a suitable dose of n-type dopants was employed to convert the carrier type in Ge thin films. In this study, the high-performance low-temperature p-channel polycrystalline-germanium thin-film transistors (TFTs) have been demonstrated via continuous wave laser crystallization and counter doping to exhibit the low subthreshold swing of 432 mV/decade, a superior on/off current ratio of 4×103 and a high hole field-effect mobility of 290 cm2/V-s.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129311317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment","authors":"Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan","doi":"10.1109/AM-FPD.2016.7543670","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543670","url":null,"abstract":"The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129317529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of organic semiconducting technology to realize low driving voltages","authors":"M. He, Chao Wang, Wen-Ya Lee, Desheng Kong, R. Pfattner, Weijun Niu, J. R. Matthews, Arthur L. Wallace, Zhenan Bao","doi":"10.1109/AM-FPD.2016.7543609","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543609","url":null,"abstract":"Corning has developed three generations of polymeric organic semiconducting (OSC) materials, each with progressively improved electronic performance and processability. These materials possess excellent solubility, mobility and stability. Stanford University has developed a new polymer dielectric material based on a fluoroelastomer. Combined with Coming's OSC polymers, this enables easy to fabricate transistors with high transconductance, low driving voltage and excellent device stability, even in water.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134109474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}