在玻璃衬底上溅射HfO2栅极堆叠的低温多晶硅tft

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543659

A. Hara, Tatsuya Meguro

{"title":"在玻璃衬底上溅射HfO2栅极堆叠的低温多晶硅tft","authors":"A. Hara, Tatsuya Meguro","doi":"10.1109/AM-FPD.2016.7543659","DOIUrl":null,"url":null,"abstract":"We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO2 gate dielectric on a nonalkaline glass substrate. The obtained field-effect mobility of CLC LT poly-Si TFTs with a HfO2 gate stack was 180 cm2/V s. However, the mobility of the HfO2 gate stack is lower than that of the PECVD-SiO2 gate stack. It was concluded that this is caused by scattering at defects and imperfections of both the inter layer (IL) SiO2 and the IL-SiO2/Si interface, but not by remote scattering from the high-k dielectric.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-temperature poly-Si TFTs with sputtered HfO2 gate stack on glass substrate\",\"authors\":\"A. Hara, Tatsuya Meguro\",\"doi\":\"10.1109/AM-FPD.2016.7543659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO2 gate dielectric on a nonalkaline glass substrate. The obtained field-effect mobility of CLC LT poly-Si TFTs with a HfO2 gate stack was 180 cm2/V s. However, the mobility of the HfO2 gate stack is lower than that of the PECVD-SiO2 gate stack. It was concluded that this is caused by scattering at defects and imperfections of both the inter layer (IL) SiO2 and the IL-SiO2/Si interface, but not by remote scattering from the high-k dielectric.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文讨论了在非碱性玻璃衬底上使用溅射金属栅极和溅射HfO2栅极介质在550°C下制备的连续波激光横向结晶(CLC)低温多晶硅薄膜晶体管(TFTs)的性能。采用HfO2栅极叠加的CLC - LT多晶硅tft的场效应迁移率为180 cm2/V s，但HfO2栅极叠加的迁移率低于PECVD-SiO2栅极叠加。结果表明，这是由IL-SiO2和IL-SiO2/Si界面的缺陷和缺陷处的散射引起的，而不是由高k介电介质的远距离散射引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low-temperature poly-Si TFTs with sputtered HfO2 gate stack on glass substrate

We discussed the performance of continuous-wave laser lateral crystallization (CLC) low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated at 550 °C with a sputtered metal gate and sputtered HfO₂ gate dielectric on a nonalkaline glass substrate. The obtained field-effect mobility of CLC LT poly-Si TFTs with a HfO₂ gate stack was 180 cm²/V s. However, the mobility of the HfO₂ gate stack is lower than that of the PECVD-SiO₂ gate stack. It was concluded that this is caused by scattering at defects and imperfections of both the inter layer (IL) SiO₂ and the IL-SiO₂/Si interface, but not by remote scattering from the high-k dielectric.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

自引率

0.00%

发文量