Correlation between contact angle and electrical properties in pentacene and C6-DNT-V-based organic thin film transistors

S. Shaari, S. Naka, H. Okada
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引用次数: 3

Abstract

We have fabricated pentacene and C6-DNT-V-based organic thin film transistors (OTFTs) with various types of interfacial layer. Eight different kinds of OTFTs were fabricated without and with interfacial layers (CT4112, PMMA, Cytop, OTS, HMDS, Ta2O5 and Si3N4). The surface properties of contact angle and electrical properties of OTFTs include charge carrier mobility, threshold voltage, and on/off current ratio were measured to compare and analyse the relationship between them. Some of the device properties show strong correlations, especially the relationship between contact angle and threshold voltage shows the strong correlation coefficient compare with others relationship. Correlation coefficient (R) between contact angle and threshold voltage was 0.83 for the pentacene and 0.88 for the C6-DNT-V-based OTFTs.
并五苯和c6 - dnt - v基有机薄膜晶体管接触角与电性能的关系
我们制备了具有不同类型界面层的并五苯和c6 - dnt - v基有机薄膜晶体管(OTFTs)。制备了无界面层和有界面层的8种otft (CT4112、PMMA、Cytop、OTS、HMDS、Ta2O5和Si3N4)。测量了接触角的表面性质和OTFTs的电学性质,包括载流子迁移率、阈值电压和开关电流比,比较和分析了它们之间的关系。器件的某些性能表现出较强的相关性,特别是接触角与阈值电压之间的关系比其他关系表现出较强的相关性。接触角与阈值电压的相关系数R分别为0.83和0.88。
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