Perovskite/p-type crystal silicon tandem solar cells

H. Kanda, A. Uzum, H. Nishino, S. Ito
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引用次数: 1

Abstract

In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.
钙钛矿/p型晶体硅串联太阳能电池
为了结合钙钛矿太阳能电池和晶体硅太阳能电池,利用铟锡氧化物作为导电层,具有高透明度。然而,在有机空穴输运材料层(Spiro-OMeTAD)上溅射导电层,观察到I-V曲线的畸变。为了分析和找出I-V曲线畸变的原因,通过改变溅射时间,在空穴输运材料上溅射沉积导电层来制备钙钛矿太阳能电池。结果表明,随着溅射时间的增加,I-V曲线的畸变增大,并且通过测量暗I-V曲线观察到不同的二极管因子,这归因于I-V曲线的畸变。
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