uv -臭氧处理增强Pt/ZnO/Pt电阻随机存取存储器(RRAM)的性能

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543670

Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan

{"title":"uv -臭氧处理增强Pt/ZnO/Pt电阻随机存取存储器(RRAM)的性能","authors":"Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan","doi":"10.1109/AM-FPD.2016.7543670","DOIUrl":null,"url":null,"abstract":"The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment\",\"authors\":\"Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan\",\"doi\":\"10.1109/AM-FPD.2016.7543670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543670\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了Pt/ZnO/Pt电阻随机存取存储器(RRAM)的双极电阻开关特性。本文介绍了uv -臭氧处理提高ZnO薄膜与Pt电极界面质量的方法。我们发现UV-Oznoe可以帮助清洁Pt电极表面，并为后续溅射ZnO薄膜的沉积提供良好的表面形貌。实验结果表明，经uv -臭氧处理后的Pt/ZnO/Pt RRAM具有较好的通断电流比和较好的保留时间。

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Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment

The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.

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来源期刊

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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