原子氢退火法还原氧化石墨烯

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543614

A. Heya, N. Matsuo

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引用次数: 0

摘要

研究了原子氢退火(AHA)对氧化石墨烯(GO)的影响。在AHA中，通过催化裂化反应在加热的钨(W)表面生成高密度的原子氢。从x射线光电子能谱上看，氧化石墨烯薄膜被AHA还原。在W网温度为1780℃，样品温度为220℃，处理时间为1800 s时，氧化石墨烯薄膜的片电阻降低了5个数量级。氧化石墨烯薄膜的还原与原子氢的化学反应有关，因为氧化石墨烯薄膜没有经过He处理而还原。氧化石墨烯薄膜中的C-O-C键被AHA优先还原。

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Reduction of graphene oxide by atomic hydrogen annealing

Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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