钙钛矿/p型晶体硅串联太阳能电池

H. Kanda, A. Uzum, H. Nishino, S. Ito
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引用次数: 1

摘要

为了结合钙钛矿太阳能电池和晶体硅太阳能电池,利用铟锡氧化物作为导电层,具有高透明度。然而,在有机空穴输运材料层(Spiro-OMeTAD)上溅射导电层,观察到I-V曲线的畸变。为了分析和找出I-V曲线畸变的原因,通过改变溅射时间,在空穴输运材料上溅射沉积导电层来制备钙钛矿太阳能电池。结果表明,随着溅射时间的增加,I-V曲线的畸变增大,并且通过测量暗I-V曲线观察到不同的二极管因子,这归因于I-V曲线的畸变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Perovskite/p-type crystal silicon tandem solar cells
In order to combine perovskite solar cell and crystal silicon solar cell, indium tin oxide as conductive layer is utilized in terms of high transparency. However, distortion of I-V curve was observed by spattering conductive layer on organic hole transport material layer (Spiro-OMeTAD). In order to analyze and find out the reason of the distortion of I-V curve, perovskite solar cell was fabricated with conductive layer deposited by spattering on the hole transport material changing spattering time. It was turned out that distortion of I-V curve was increased with increase of spattering time and different diode factor was observed by measuring dark I-V curve, which attribute to the distortion of I-V curve.
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