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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.最新文献

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DC bias dependence of piezoelectric properties of <111> oriented Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ single crystals 取向Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/单晶压电性能的直流偏置依赖性
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195959
S-F. Liu, Wendi Ren, B. Mukherjee, S.J. Zhang, T. Shrout
{"title":"DC bias dependence of piezoelectric properties of <111> oriented Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ single crystals","authors":"S-F. Liu, Wendi Ren, B. Mukherjee, S.J. Zhang, T. Shrout","doi":"10.1109/ISAF.2002.1195959","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195959","url":null,"abstract":"The piezoelectric d coefficients of <111> oriented (1-x)Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-xPbTiO/sub 3/ single crystals for x = 0.045 and x = 0.08 (PZN-4.5%PT and PZN-8%PT) have been measured as functions of DC bias field and frequency using a Zygo laser interferometer system. The d coefficients decreased as the DC bias was increased, perhaps because of domain wall clamping due to the bias field. The d coefficients were also found to decrease with the increase of frequency; this frequency dependence decreased at sufficiently large bias fields. High d/sub 15/ values (/spl sim/2800 pC/N for PZN-4.5%PT and /spl sim/3300 pC/N for PZN-8%PT) were measured, which may make these <111> oriented crystals promising candidates for high performance shear transducers.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130608653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New accurate technique for solving the LIMM equation and a comparison with other methods 一种新的精确求解LIMM方程的方法，并与其它方法进行了比较
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195861
S. Lang
{"title":"New accurate technique for solving the LIMM equation and a comparison with other methods","authors":"S. Lang","doi":"10.1109/ISAF.2002.1195861","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195861","url":null,"abstract":"The Laser Intensity Modulation Method (LIMM) is widely used for the determination of the spatial distribution of polarization in ceramics, single crystals and polymers. The experimental data measured are pyroelectric currents as functions of frequency. The data analysis requires the numerical solution of a Fredholm integral equation of the 1st kind. This is an ill-posed problem that has multiple and very different solutions. In this paper, a new technique is proposed that gives the polarization. distribution in the form of a special 8th-degree polynomial. Both simulated and experimental data are analyzed with the new technique.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134096720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Linear and second-order nonlinear optical dielectric behaviors of lithium niobate single crystals at high temperatures 线性和二阶非线性光学介质高温铌酸锂单晶的行为
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195952
D. Xue, S. Kurimura, K. Kitamura
{"title":"Linear and second-order nonlinear optical dielectric behaviors of lithium niobate single crystals at high temperatures","authors":"D. Xue, S. Kurimura, K. Kitamura","doi":"10.1109/ISAF.2002.1195952","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195952","url":null,"abstract":"Dielectric properties - linear and second-order nonlinear optical properties - of lithium niobate ferroelectric crystals are quantitatively studied from the crystallographic structures at different temperatures. On the basis of constituent chemical bonds of lithium niobate, the temperature dependent nature of dielectric properties of such crystals has been concluded. Dielectric responses increase with temperature increasing in a wide range from room temperature to the Curie temperature.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"494 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131731096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Piezoelectric properties of metastable (Li, Na)NbO/sub 3/ ceramics 亚稳(Li, Na)NbO/sub - 3/陶瓷的压电性能
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195938
M. Kimura, T. Ogawa, A. Ando, Y. Sakabe
{"title":"Piezoelectric properties of metastable (Li, Na)NbO/sub 3/ ceramics","authors":"M. Kimura, T. Ogawa, A. Ando, Y. Sakabe","doi":"10.1109/ISAF.2002.1195938","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195938","url":null,"abstract":"Piezoelectric properties of a metastable state in lithium sodium niobate (Li/sub 0.12/Na/sub 0.88/)NbO/sub 3/ ceramics were investigated. (Li/sub x/Na/sub 1-x/)NbO/sub 3/ system has been widely studied and the compounds around x=0.1 have attracted much attention as materials for high frequency piezoelectric applications, because of the large electro-mechanical coupling coefficient and low dielectric permittivity. However, the temperature stability of resonance frequency is not sufficient for these applications, because of the thermal hysteresis of resonance frequency around 100/spl deg/C. It is considered that the thermal hysteresis is caused by the first-order phase transition between rhombohedral and monoclinic phase. We found that the high temperature monoclinic phase became stable at room temperature after a heat treatment in (Li/sub 0.12/Na/sub 0.88/)NbO/sub 3/ (LNN) ceramics. The thermal hysteresis was not observed in the metastable LNN. The electromechanical coupling coefficients of metastable LNN became about two third of that before the heat treatment, and mechanical quality factor became about six times larger. The metastable state was affected by the heat treatment condition. Cooling from tetragonal state, which is observed above monoclinic phase, is probably needed to obtain the meatstable state.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122125387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Comparison between Mason's equivalent circuit and complex series dynamics from energetic point of view 从能量的角度比较梅森等效电路与复串联动力学
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195866
M. Ohki, K. Toda
{"title":"Comparison between Mason's equivalent circuit and complex series dynamics from energetic point of view","authors":"M. Ohki, K. Toda","doi":"10.1109/ISAF.2002.1195866","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195866","url":null,"abstract":"With regard to the mathematical treatment of piezoelectric transducer, the conventional framework using Mason's equivalent circuit and a new method termed 'complex series dynamics' are compared from the viewpoint of energy in the transducer. In the latter method, precise evaluation of resonance intensity and frequency can be performed. In addition, conventional and new frameworks to treat a shift of acoustic speed are outlined.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128564450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contribution to the understanding of quantitative measurements of piezoelectric coefficients of thin films using AFM piezoresponse mode 对利用AFM压电响应模式定量测量薄膜压电系数的理解有贡献
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195880
B. Gautier, S. Ballandras, V. Blondeau-Patissier, W. Daniau, D. Hauden, J. Labrune
{"title":"Contribution to the understanding of quantitative measurements of piezoelectric coefficients of thin films using AFM piezoresponse mode","authors":"B. Gautier, S. Ballandras, V. Blondeau-Patissier, W. Daniau, D. Hauden, J. Labrune","doi":"10.1109/ISAF.2002.1195880","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195880","url":null,"abstract":"In order to better understand the behaviour of piezoelectric films when probed with an Atomic Force Microscope, we have modeled the system cantilever/probe/piezoelectric thin film/silicon substrate with a home-made finite elements method. The results of the simulation in terms of amplitude of vibration are compared with real piezoelectric measurements performed with a commercial AFM instrument on a PZT thin film formed by rf-magnetron sputtering. The possibility of operating quantitative and very local measurements of the piezoelectric coefficients is discussed using this operating mode.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129659369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
BSPT- and PZNT-based high frequency single element transducers for medical ultrasonic imaging 基于BSPT和pznt的医用超声成像高频单元件换能器
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195932
S. Rhee, S. Zhang, G. Molingou, T. Shrout, K. Shung
{"title":"BSPT- and PZNT-based high frequency single element transducers for medical ultrasonic imaging","authors":"S. Rhee, S. Zhang, G. Molingou, T. Shrout, K. Shung","doi":"10.1109/ISAF.2002.1195932","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195932","url":null,"abstract":"Ferroelectric single crystals with tetragonal compositions Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-xPbTiO/sub 3/ (PZNT) and high T/sub C/ (1-x)BiScCo/sub 3/-xPbTiO/sub 3/ (BSPT) were grown by Flux technique, respectively. Dielectric and piezoelectric characterization revealed high thickness coupling coefficients. (k/sub t/ > 60 %) and relatively low dielectric permittivities (/spl epsi//sup s/ < 300) qualifying them as candidates for high frequency (> 20 MHZ) single element transducers. Modeling based on the KLM equivalent circuit was performed resulting in projected bandwidth > 60 % for BSPT and > 70 % for PZNT and therefore high sensitivity. Single element transducers were fabricated with suitable matching and backing layers. For a PZNT transducer with a 35 MHz center frequency, a bandwidth of /spl sim/ 80 % was realized.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127240576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical properties of MOD derived Bi/sub 4/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si structures MOD衍生Bi/sub 4/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si结构的物理性质
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195912
M. Yamaguchi, T. Nagatomo, Y. Masuda
{"title":"Physical properties of MOD derived Bi/sub 4/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si structures","authors":"M. Yamaguchi, T. Nagatomo, Y. Masuda","doi":"10.1109/ISAF.2002.1195912","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195912","url":null,"abstract":"Bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi/sub 2/SiO/sub 5/) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi/sub 4/Ti/sub 3/O/sub 12/ with c-axis dominant orientation. Thickness of Bi/sub 4/Ti/sub 3/O/sub 12/ and Bi/sub 2/SiO/sub 5/ layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10/sup -9/ A cm/sup -2/ and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films are greatly dependent on the existence of a Bi/sub 2/SiO/sub 5/ layer. Therefore, we consider that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin film characteristics may be improved by Bi/sub 2/SiO/sub 5/ buffer layer.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130249512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructure study of Bi/sub 4/Ti/sub 3/O/sub 12/-SrBi/sub 4/O/sub 15/ and Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/-SrBi/sub 4/Ti/sub 4/O/sub 15/ ceramics Bi/sub 4/Ti/sub 3/O/sub 12/-SrBi/sub 4/O/sub 15/和Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/-SrBi/sub 4/Ti/sub 4/O/sub 15/陶瓷的微观结构研究
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195873
D. Su, J. Zhu, D.Y. Wang, H. Chad, C. Choy, Y.N. Wang
{"title":"Microstructure study of Bi/sub 4/Ti/sub 3/O/sub 12/-SrBi/sub 4/O/sub 15/ and Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/-SrBi/sub 4/Ti/sub 4/O/sub 15/ ceramics","authors":"D. Su, J. Zhu, D.Y. Wang, H. Chad, C. Choy, Y.N. Wang","doi":"10.1109/ISAF.2002.1195873","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195873","url":null,"abstract":"TEM study is preformed on mixed-layer type bismuth compounds: Bi/sub 4/Ti/sub 3/O/sub 12/-SrBi/sub 4/T/sub 4/O/sub 15/ (BT-SBTi) and Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/-SrB/sub 4/T/sub 4/O/sub 15/ (BLT-SBTi) ceramics. Meeting the prediction of space group theory, APBs and 90/spl deg/ domain wall are observed by bright- and dark-field imaging in both materials. Besides, other planer defects are found and confirmed to be stacking faults.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130489971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ ferroelectric thick films with uniform thickness and its applications to RF MEMS devices 均匀厚度Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/铁电厚膜及其在RF MEMS器件中的应用
Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195971
Zheyao Wang, Jianshe Liu, T. Ren, Litian Liu, Zhijian Li
{"title":"Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ ferroelectric thick films with uniform thickness and its applications to RF MEMS devices","authors":"Zheyao Wang, Jianshe Liu, T. Ren, Litian Liu, Zhijian Li","doi":"10.1109/ISAF.2002.1195971","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195971","url":null,"abstract":"Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ (BST) thick films for RF MEMS applications were prepared by a modified sol-gel method and characterized by microwave measurements. In order to obtain thick films and low loss tangent, poly vinyl-pyrrolidone (PVP) and Mg were doped into the solution to avoid crack formations and reduce loss tangent. Interdigital capacitors and CPW microstrip lines for low and high frequency measurements, respectively, were patterned on BST films. Their theoretical models with three-layer structures were established with conformal mapping techniques to extract dielectric properties of BST at frequencies from 50 M to 26 GHz. Experiments show that PVP and Mg are effective in improving the performance of thick films. Applications of BST thick films to RF MEMS devices were discussed.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121141494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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