均匀厚度Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/铁电厚膜及其在RF MEMS器件中的应用

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195971

Zheyao Wang, Jianshe Liu, T. Ren, Litian Liu, Zhijian Li

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引用次数: 1

摘要

采用改进的溶胶-凝胶法制备了用于RF MEMS的Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ (BST)厚膜，并用微波测量对其进行了表征。为了获得厚膜和低损耗正切线，在溶液中掺入聚乙烯吡咯烷酮(PVP)和Mg，以避免裂纹形成和降低损耗正切线。在BST薄膜上分别绘制了用于低频和高频测量的数字间电容器和CPW微带线。利用保角映射技术建立了三层结构的理论模型，提取了50 ~ 26 GHz频率范围内BST的介电特性。实验表明PVP和Mg对提高厚膜的性能是有效的。讨论了BST厚膜在射频MEMS器件中的应用。

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Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ ferroelectric thick films with uniform thickness and its applications to RF MEMS devices

Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ (BST) thick films for RF MEMS applications were prepared by a modified sol-gel method and characterized by microwave measurements. In order to obtain thick films and low loss tangent, poly vinyl-pyrrolidone (PVP) and Mg were doped into the solution to avoid crack formations and reduce loss tangent. Interdigital capacitors and CPW microstrip lines for low and high frequency measurements, respectively, were patterned on BST films. Their theoretical models with three-layer structures were established with conformal mapping techniques to extract dielectric properties of BST at frequencies from 50 M to 26 GHz. Experiments show that PVP and Mg are effective in improving the performance of thick films. Applications of BST thick films to RF MEMS devices were discussed.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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