Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.最新文献

Electrical properties of Er-doped BaTiO/sub 3/ ceramics for PTCR applications PTCR用掺铒BaTiO/ sub3 /陶瓷的电学性能

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-06-01 DOI: 10.1109/ISAF.2002.1195881

M. Viviani, M. T. Buscaglia, V. Buscaglia, L. Mitoseriu, A. Testino, P. Nanni

{"title":"Electrical properties of Er-doped BaTiO/sub 3/ ceramics for PTCR applications","authors":"M. Viviani, M. T. Buscaglia, V. Buscaglia, L. Mitoseriu, A. Testino, P. Nanni","doi":"10.1109/ISAF.2002.1195881","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195881","url":null,"abstract":"The electrical properties of Er-doped BaTiO/sub 3/ ceramics with different amounts of dopant in the range (0.25-8) at.% and with electron compensation were studied using D.C.-resistance and impedance spectroscopy (IS) measurements. The experimental results were compared with the Double Barrier Schottky theory for the description of the PTCR effect. D.C. resistance results and microstructure analyses were used to discuss the role of dopant concentration, mechanism of incorporation and cooling rate on the PTCR behaviour. Optimum processing parameters that ensure the best PTCR ratio were found. IS measurements were performed at various temperature over the whole transition range and grain boundary and bulk contributions were extracted by a non linear least squares fitting procedure. Dielectric constant and resistivity values were obtained and used to derive model parameters for different samples. Temperature dependence of total resistivity was calculated and compared to D.C. curves. The agreement is good in a large range of temperature, including the ferro-para phase transition.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127260923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Thickness-dependent leakage current of (PVDF/PbTiO/sub 3/) pyroelectric bilayer thin film detectors (PVDF/PbTiO/ sub3 /)热释电双层薄膜探测器的厚度相关漏电流

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-06-01 DOI: 10.1109/ISAF.2002.1195885

M. Kao, C. Wang, Y. Chen

{"title":"Thickness-dependent leakage current of (PVDF/PbTiO/sub 3/) pyroelectric bilayer thin film detectors","authors":"M. Kao, C. Wang, Y. Chen","doi":"10.1109/ISAF.2002.1195885","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195885","url":null,"abstract":"The novel pyroelectric infrared (IR) detectors have been fabricated using the Polyvinylidene Fluoride (PVDF)/Lead Titanate (PT) pyroelectric bilayer thin films which were deposited onto Pt(111)/SiO/sub 2//Si(100) substrates by a sol-gel process. The ceramic/polymer structure was constructed of the randomly oriented polycrystalline PT film(/spl sim/1 /spl mu/m) heated at 700/spl deg/C for 1 h and the /spl beta/-phase PVDF film crystallized at 65/spl deg/C for 2 h. The effects of PVDF thin film thickness (100/spl sim/580 nm) on the pyroelectric response of IR detectors were studied. The results show that the depositions of PVDF thin films onto the PT films will cause the leakage current (J) of the detectors decrease from 6.37 /spl times/ 10/sup -7/ A/cm/sup 2/ to 3.86 /spl times/ 10/sup -7/ A/cm/sup 2/. The specific detectivity (D*) measured at 100 Hz decreased from 2.72 /spl times/ 10/sup -7/ cm/spl middot/Hz/sup 1/2//W for detector without PVDF to 1.71 /spl times/ 10/sup -7/ cm/spl middot/Hz/sup 1/2//W for detector with PVDF thickness of 580 nm. By optimizing the ratio of the specific detectivity (D*) to leakage current, D*/J, the detector with PVDF thickness of 295 nm exhibits the best performance.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123712918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric, elastic and piezoelectric losses of PZT ceramics in the resonance state PZT陶瓷在谐振状态下的介电、弹性和压电损耗

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-06-01 DOI: 10.1109/ISAF.2002.1195947

T. Tsurumi, H. Kakemoto, S. Wada

引用次数: 8

Depth profile of fixed charge in epitaxial oxide films on silicon substrate for MFIS structure MFIS结构硅衬底外延氧化膜固定电荷深度分布

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195894

T. Yamada, N. Wakiya, K. Shinozaki, N. Mizutani

引用次数: 0

Novel numerical method to correct for both circuit distortions and passive layers effect affecting Sawyer-Tower ferroelectric thin films hysteresis measurements 采用一种新的数值方法对影响索耶-塔铁电薄膜迟滞测量的电路畸变和无源层效应进行校正

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195858

R. Bouregba, G. Poullain

引用次数: 0

Design and analysis of a piezoelectric ultrasonic transducer for distance measurement 一种用于距离测量的压电超声换能器的设计与分析

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195937

Z. Gui, Xiaobing Hu, Longtu Li

引用次数: 1

Dielectric properties of (Ba,Sr)TiO/sub 3/ MOD films grown on various substrates 不同衬底生长(Ba,Sr)TiO/sub 3/ MOD薄膜的介电性能

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195916

I. Koutsaroff, P. Woo, L. Mcneil, M. Zelner, A. Kassam, M. Capanu, L. Chmiel, B. McClelland, A. Cervin-Lawry

{"title":"Dielectric properties of (Ba,Sr)TiO/sub 3/ MOD films grown on various substrates","authors":"I. Koutsaroff, P. Woo, L. Mcneil, M. Zelner, A. Kassam, M. Capanu, L. Chmiel, B. McClelland, A. Cervin-Lawry","doi":"10.1109/ISAF.2002.1195916","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195916","url":null,"abstract":"(Ba/sub 0.7/SrO/sub 0.3/)TiO/sub 3/ (BST) double layer capacitors with Pt electrodes were fabricated under identical conditions on different substrates: SiO/sub 2//Si(111), r-plane sapphire, polycrystalline alumina Al/sub 2/O/sub 3/ (99.6%), Zirconia/Yttria Stabilized Alumina (ZYSA) and glazed polycrystalline alumina. The formation of the crystalline structure of BST films, grown by metal-organic decomposition (MOD) at various thermal processing conditions, leads to significant change in the dielectric properties of the BST films. By preparing BST films of the same thickness and under the same processing conditions, we observed that they possess higher capacitance when grown on all types of alumina-based substrates compared to those on SiO/sub 2//Si substrates. The higher capacitance on alumina were always associated with larger dissipation factors, and lower or similar leakage current densities. The final tuning of dielectric properties of BST double layer capacitors on non-silicon substrates was correlated to the processing conditions. Furthermore, the processing parameters and the type of lower electrode should be optimized individually for each specific substrate. The lowest achieved leakage current density of Pt/BST/Pt capacitor (500/spl times/500 /spl mu/m/sup 2/) on glazed alumina was 2.8/spl times/10/sup -9/ A/cm/sup 2/ at 200 kV/cm with capacitance per unit area of 27 fF//spl mu/m/sup 2/.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

New high temperature morphotropic phase boundary piezoelectric ceramics 新型高温相变相界压电陶瓷

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195923

T. Shrout, R. Eitel, C. Randall, E. Alberta, P. Rehrig

引用次数: 10

Novel piezoelectric ceramic/polymer composite transducers 新型压电陶瓷/聚合物复合换能器

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195930

S. Turcu, B. Jadidian, S. Danforth, A. Safari

{"title":"Novel piezoelectric ceramic/polymer composite transducers","authors":"S. Turcu, B. Jadidian, S. Danforth, A. Safari","doi":"10.1109/ISAF.2002.1195930","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195930","url":null,"abstract":"The design, processing conditions and electromechanical characterization of novel piezoelectric ceramic/polymer composites with 2-2 and 3-3 connectivity is presented. The ceramic structures made of PZT were prepared by Layered Manufacturing, namely by Fused Deposition of Ceramics (FDC) process. The ceramic phase in the form of fibers or sheets was oriented at different orientation angles /spl theta/ with respect to the x/sub 3/ axis of the sample, which varied between 0/spl deg/ and 75/spl deg/, in 15/spl deg/ increments. The sintered structures were placed in Spurr Epoxy polymer and diced in 2mm thickness. The electromechanical and elastic properties were investigated as a function of orientation angle /spl theta/. The longitudinal piezoelectric charge coefficient showed a decrease in the property as the /spl theta/ increases. It was found that as the orientation angle /spl theta/ was increased, the transverse piezoelectric charge coefficient d/sub 3l/ changed its sign from a negative to a positive value at /spl theta/ = 37.5/spl deg/ reaching a maximum value at 45/spl deg/ for both types of composites. Due to the contribution of a positive d/sub 3l/ coefficient, a significant increase in the hydrostatic charge coefficient was observed.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128488910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric properties of capacitor materials in the optical frequency range 电容材料在光学频率范围内的介电特性

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195857

M. Biegalski, R. Thayer, J. Nino, S. Trolier-McKinstry

引用次数: 1