采用一种新的数值方法对影响索耶-塔铁电薄膜迟滞测量的电路畸变和无源层效应进行校正

R. Bouregba, G. Poullain
{"title":"采用一种新的数值方法对影响索耶-塔铁电薄膜迟滞测量的电路畸变和无源层效应进行校正","authors":"R. Bouregba, G. Poullain","doi":"10.1109/ISAF.2002.1195858","DOIUrl":null,"url":null,"abstract":"A novel approach is proposed to compute the ferroelectric polarization by correcting numerically for both parasitic disturbing S-T hysteresis measurements and possible interfacial layers. This is achieved by taking into account all the charges flowing in a S-T circuit.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"215 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel numerical method to correct for both circuit distortions and passive layers effect affecting Sawyer-Tower ferroelectric thin films hysteresis measurements\",\"authors\":\"R. Bouregba, G. Poullain\",\"doi\":\"10.1109/ISAF.2002.1195858\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel approach is proposed to compute the ferroelectric polarization by correcting numerically for both parasitic disturbing S-T hysteresis measurements and possible interfacial layers. This is achieved by taking into account all the charges flowing in a S-T circuit.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"215 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195858\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195858","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种计算铁电极化的新方法,通过对寄生干扰S-T滞回测量和可能的界面层进行数值校正。这是通过考虑在S-T电路中流动的所有电荷来实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel numerical method to correct for both circuit distortions and passive layers effect affecting Sawyer-Tower ferroelectric thin films hysteresis measurements
A novel approach is proposed to compute the ferroelectric polarization by correcting numerically for both parasitic disturbing S-T hysteresis measurements and possible interfacial layers. This is achieved by taking into account all the charges flowing in a S-T circuit.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信