电容材料在光学频率范围内的介电特性

M. Biegalski, R. Thayer, J. Nino, S. Trolier-McKinstry
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引用次数: 1

摘要

电容材料的光学特性和带隙很重要,原因有很多,包括评估半导体中栅极介质候选材料的可行性,识别极化率的电子元件,以及监测降解过程。本文用椭圆偏振光谱法测定了几种电容器材料在近紫外至近红外波段的高频介电函数。利用椭偏光谱法测定了介电函数变化引起的深度分布变化。在这项工作中,研究了介电材料,主要是钛酸锶,以确定它们在直流电场诱导降解过程中的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric properties of capacitor materials in the optical frequency range
The optical properties and band gaps of capacitor materials are important for a number of reasons, including assessing the viability of candidate materials for gate dielectrics in semiconductors, identifying the electronic components of the polarizability, and monitoring degradation processes. This paper reports the high frequency dielectric function of several capacitor materials in the near UV to near IR range as determined by spectroscopic ellipsometry. Spectroscopic ellipsometry was also be used to determine changes in the depth profile due to changes in the dielectric function. In this work dielectric materials, primarily strontium titanate, were examined to determine their changes during DC electric field induced degradation.
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