PTCR用掺铒BaTiO/ sub3 /陶瓷的电学性能

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-06-01 DOI:10.1109/ISAF.2002.1195881

M. Viviani, M. T. Buscaglia, V. Buscaglia, L. Mitoseriu, A. Testino, P. Nanni

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引用次数: 2

摘要

在0.25 ~ 8范围内，对掺铒量不同的BaTiO/sub - 3/陶瓷的电学性能进行了研究。采用直流电阻和阻抗谱(IS)测量方法研究了电子补偿和电子补偿。实验结果与描述PTCR效应的双势垒肖特基理论进行了比较。利用直流电阻结果和微观结构分析，讨论了掺杂浓度、掺杂机理和冷却速率对PTCR性能的影响。找到了保证最佳PTCR比的最佳工艺参数。在整个转变范围内的不同温度下进行了IS测量，并通过非线性最小二乘拟合程序提取了晶界和体积贡献。得到介电常数和电阻率值，并以此推导出不同样品的模型参数。计算了总电阻率的温度依赖性，并与直流曲线进行了比较。在较大的温度范围内，包括铁-准相转变，一致性较好。

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Electrical properties of Er-doped BaTiO/sub 3/ ceramics for PTCR applications

The electrical properties of Er-doped BaTiO/sub 3/ ceramics with different amounts of dopant in the range (0.25-8) at.% and with electron compensation were studied using D.C.-resistance and impedance spectroscopy (IS) measurements. The experimental results were compared with the Double Barrier Schottky theory for the description of the PTCR effect. D.C. resistance results and microstructure analyses were used to discuss the role of dopant concentration, mechanism of incorporation and cooling rate on the PTCR behaviour. Optimum processing parameters that ensure the best PTCR ratio were found. IS measurements were performed at various temperature over the whole transition range and grain boundary and bulk contributions were extracted by a non linear least squares fitting procedure. Dielectric constant and resistivity values were obtained and used to derive model parameters for different samples. Temperature dependence of total resistivity was calculated and compared to D.C. curves. The agreement is good in a large range of temperature, including the ferro-para phase transition.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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