Physical properties of MOD derived Bi/sub 4/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si structures

Abstract

Bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi/sub 2/SiO/sub 5/) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi/sub 4/Ti/sub 3/O/sub 12/ with c-axis dominant orientation. Thickness of Bi/sub 4/Ti/sub 3/O/sub 12/ and Bi/sub 2/SiO/sub 5/ layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10/sup -9/ A cm/sup -2/ and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films are greatly dependent on the existence of a Bi/sub 2/SiO/sub 5/ layer. Therefore, we consider that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin film characteristics may be improved by Bi/sub 2/SiO/sub 5/ buffer layer.