取向Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/单晶压电性能的直流偏置依赖性

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195959

S-F. Liu, Wendi Ren, B. Mukherjee, S.J. Zhang, T. Shrout

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引用次数: 0

摘要

利用Zygo激光干涉仪系统测量了x = 0.045和x = 0.08 (PZN-4.5%PT和PZN-8%PT)取向(1-x)Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-xPbTiO/sub 3/单晶(Zn/sub 1/3/Nb/sub 2/3/)的压电系数随直流偏置场和频率的变化。d系数随着直流偏置的增加而减小，可能是由于偏置场引起的畴壁夹紧。d系数也随频率的增加而减小;在足够大的偏置场下，这种频率依赖性减弱。测量了高d/sub 15/值(PZN-4.5%PT为/spl sim/2800 pC/N, PZN-8%PT为/spl sim/3300 pC/N)，这可能使这些取向晶体成为高性能剪切传感器的有希望的候选者。

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DC bias dependence of piezoelectric properties of <111> oriented Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ single crystals

The piezoelectric d coefficients of <111> oriented (1-x)Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-xPbTiO/sub 3/ single crystals for x = 0.045 and x = 0.08 (PZN-4.5%PT and PZN-8%PT) have been measured as functions of DC bias field and frequency using a Zygo laser interferometer system. The d coefficients decreased as the DC bias was increased, perhaps because of domain wall clamping due to the bias field. The d coefficients were also found to decrease with the increase of frequency; this frequency dependence decreased at sufficiently large bias fields. High d/sub 15/ values (/spl sim/2800 pC/N for PZN-4.5%PT and /spl sim/3300 pC/N for PZN-8%PT) were measured, which may make these <111> oriented crystals promising candidates for high performance shear transducers.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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