MOD衍生Bi/sub 4/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si结构的物理性质

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195912

M. Yamaguchi, T. Nagatomo, Y. Masuda

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引用次数: 0

摘要

以硅酸铋(Bi/sub 2/SiO/sub 5/)为缓冲层，采用金属有机分解(MOD)法在(100)取向硅衬底上制备了钛酸铋(Bi/sub 4/Ti/sub 3/O/sub 12/)薄膜。结果表明，所得薄膜为c轴为主取向的Bi/sub 4/Ti/sub 3/O/sub 12/单相薄膜。Bi/sub 4/Ti/sub 3/O/sub 12/和Bi/sub 2/SiO/sub 5/层的厚度分别约为50 nm和5 nm。制备的金属-铁电-绝缘体-半导体(MFIS)结构具有相对优越的泄漏电流密度，约为10/sup -9/ A cm/sup -2/，击穿电压约为10 V。从上述结果可以证实，Bi/sub 4/Ti/sub 3/O/sub 12/薄膜的结晶度和表面形貌在很大程度上取决于Bi/sub 2/SiO/sub 5/层的存在。因此，我们认为Bi/sub 2/SiO/sub 5/缓冲层可以改善Bi/sub 4/Ti/sub 3/O/sub 12/薄膜的性能。

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Physical properties of MOD derived Bi/sub 4/Ti/sub 3/O/sub 12//Bi/sub 2/SiO/sub 5//Si structures

Bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi/sub 2/SiO/sub 5/) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi/sub 4/Ti/sub 3/O/sub 12/ with c-axis dominant orientation. Thickness of Bi/sub 4/Ti/sub 3/O/sub 12/ and Bi/sub 2/SiO/sub 5/ layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10/sup -9/ A cm/sup -2/ and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films are greatly dependent on the existence of a Bi/sub 2/SiO/sub 5/ layer. Therefore, we consider that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin film characteristics may be improved by Bi/sub 2/SiO/sub 5/ buffer layer.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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