2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)最新文献

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Circuit boards with integrated optical interconnects-technology, modeling, and application examples 集成光互连电路板-技术,建模和应用实例
E. Strake, D. Krabe
{"title":"Circuit boards with integrated optical interconnects-technology, modeling, and application examples","authors":"E. Strake, D. Krabe","doi":"10.1109/LEOSST.2000.869688","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869688","url":null,"abstract":"This contribution presents concepts, technologies, and first results for novel hybrid electrical/optical circuit boards which extend the conventional setup of existing electrical printed circuit boards by incorporating additional layers with optical waveguide structures. A major aspect of the inclusion of optically functional layers into conventional circuit boards is the requirement of maximum compatibility with existing board fabrication and assembly techniques. Any substantial change in board fabrication and assembly parameters has to be avoided in order to obtain the desired cost efficiency.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115185514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel photoreceiver array with near field resolution capability [for ultrahigh-density storage] 一种具有近场分辨率的新型光电接收器阵列[用于超高密度存储]
B. Seshadri, J. Tang, I. Chyr, A. Steckl, F. Beyette
{"title":"A novel photoreceiver array with near field resolution capability [for ultrahigh-density storage]","authors":"B. Seshadri, J. Tang, I. Chyr, A. Steckl, F. Beyette","doi":"10.1109/LEOSST.2000.869698","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869698","url":null,"abstract":"A photoreceiver array is presented that exploits the features of near field optics to provide sub-nanometer spatial resolution. Comprised of a photonic CMOS photoreceiver chip and a MEMS based aperture array, the near-field photoreceiver array is implemented using standard fabrication techniques.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115611342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A fully-connected, distributed mesh feedback architecture for photonic A/D conversion 用于光子A/D转换的全连接分布式网格反馈架构
B. Shoop, P. Das, E. Ressler, R. W. Sadowski, G. P. Dudevoir, A. Sayles
{"title":"A fully-connected, distributed mesh feedback architecture for photonic A/D conversion","authors":"B. Shoop, P. Das, E. Ressler, R. W. Sadowski, G. P. Dudevoir, A. Sayles","doi":"10.1109/LEOSST.2000.869701","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869701","url":null,"abstract":"We report a new approach to photonic ADC using a distributed neural network oversampling techniques, and a smart pixel hardware implementation. In this approach, the input signal is first sampled at a rate higher than that required by the Nyquist criterion and then presented spatially as the input to a two-dimensional error diffusion neural network consisting of M/spl times/N neurons, each representing a pixel in the image space. The neural network processes the input oversampled analog image and produces an M/spl times/N pixel binary or halftoned output image. By design of the neural network, this halftoned output image is an optimum representation of the input analog signal. Upon convergence, the neural network minimizes an energy function representing the frequency-weighted squared error between the input analog image and the output halftoned image. Decimation and low-pass filtering techniques digitally sum and average the M/spl times/N pixel output binary image using high-speed digital electronic circuitry. By employing a two-dimensional smart pixel neural approach to oversampling ADC, each pixel constitutes a simple oversampling modulator thereby producing a distributed A/D architecture. Spectral noise shaping across the array diffuses quantization error thereby improving overall SNR performance. Each quantizer within the network is embedded in a fully-connected distributed mesh feedback loop which spectrally shapes the overall quantization noise thereby significantly reducing the effects of component mismatch typically associated with parallel or channelized A/D approaches.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117026089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of diode laser spectroscopy for moisture contamination measurement in semiconductor processing 二极管激光光谱学在半导体加工中水分污染测量中的应用
J. Mcandrew, R. Inman, D. Znamnensky
{"title":"Application of diode laser spectroscopy for moisture contamination measurement in semiconductor processing","authors":"J. Mcandrew, R. Inman, D. Znamnensky","doi":"10.1109/LEOSST.2000.869708","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869708","url":null,"abstract":"The applications of tunable diode laser absorption spectroscopy (TDLAS) to a variety of semiconductor process environments, including RTP, CVD and etch, are discussed. TDLAS has been demonstrated to be compatible with aggressive gases such as HCl, NH/sub 3/, SiH/sub 2/Cl/sub 2/, etc. and with strongly depositing atmospheres as in Si/sub 3/N/sub 4/ LPCVD. In addition, it has been shown to be capable of trace moisture measurements to 50 ppb in pure NH/sub 3/ and to 10 ppb in a variety of corrosive gases including HCl. These applications are discussed as are the key differences in approach required for in situ and for high-purity gas measurement.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117218869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Penalty-free polarization insensitive wavelength conversion using bidirectional four-wave mixing in a single semiconductor optical amplifier 在单半导体光放大器中使用双向四波混频的无罚偏振不敏感波长转换
J.M. Tang, P. Spencer, K. Shore
{"title":"Penalty-free polarization insensitive wavelength conversion using bidirectional four-wave mixing in a single semiconductor optical amplifier","authors":"J.M. Tang, P. Spencer, K. Shore","doi":"10.1109/LEOSST.2000.869768","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869768","url":null,"abstract":"Four-wave mixing (FWM) in Semiconductor Optical Amplifiers (SOAs) has been extensively investigated for a number of applications in optical communications. The strong polarization sensitivity of the mixing process is, however, a major issue in the utilization of the FWM technique in practical networks. Several schemes for polarization insensitive FWM in SOAs have been demonstrated, which utilise rather complex configurations involving several optical components. Recently, we proposed an extremely simple scheme for polarization insensitive FWM, utilizing just one polarization insensitive SOA and one pump wave. Furthermore, employing two pump sources in the scheme, polarization insensitive and frequency-conversion frequency-interval independent FWM can be also obtained. In all the aforementioned configurations, polarization insensitive SOAs were employed to achieve the polarization insensitive FWM performance. In this paper, we will show that polarization insensitive FWM operation can also be realised, using a polarization sensitive SOA by modifying the configuration","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"601 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120875946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ spectral ellipsometry monitoring/control of MBE growth MBE生长的原位光谱椭偏监测/控制
W. T. Taferner, K. Mahalingam, D. Dorsey, S. Adams
{"title":"In-situ spectral ellipsometry monitoring/control of MBE growth","authors":"W. T. Taferner, K. Mahalingam, D. Dorsey, S. Adams","doi":"10.1109/LEOSST.2000.869725","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869725","url":null,"abstract":"Spectroscopic ellipsometry (SE) has received considerable attention for semiconductor growth monitoring and control due to its ability to determine the thickness and composition of thin parallel layers. In this work, we report on the use of spectroscopic ellipsometry for monitoring and control of AlGaAs growth in molecular beam epitaxy. Knowledge of the optical constants as a function of composition and growth parameters is essential for modeling to be able to extract the composition and growth rate from measured SE data. For this work, we have used the virtual interface approximation to extract the growth rate and composition of of Al/sub x/Ga/sub 1-x/As films grown at normal and elevated temperatures. At elevated temperatures, Ga possessed a sticking coefficient less than 1. 900 K Ga was observed to grow at a constant rate. At elevated temperatures the Ga growth rate decreased until at 940 K no continued growth was observed. Under all conditions SE accurately predicted the observed growth rates.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128560366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaAs composition measurements from in situ optical reflectance 原位光学反射率测量AlGaAs成分
K. Bertness, J. Armstrong, R. Marinenko, L. Robins, A. Paul, J. Pellegrino, P. M. Amirtharaj, D. Chandler-Horowitz
{"title":"AlGaAs composition measurements from in situ optical reflectance","authors":"K. Bertness, J. Armstrong, R. Marinenko, L. Robins, A. Paul, J. Pellegrino, P. M. Amirtharaj, D. Chandler-Horowitz","doi":"10.1109/LEOSST.2000.869715","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869715","url":null,"abstract":"We describe preliminary determinations of AlGaAs layer composition using in situ optical reflectance spectroscopy (ORS) data. RHEED oscillations are used to independently determine the composition of the AlGaAs layers. The results are compared with ex situ measurements. Although additional work is needed to refine the uncertainty estimates and reduce sources of error, we find that growth rate as measured by ORS agrees with RHEED oscillation data to within 2%. The ultimate goal of this project is to produce standard reference materials of certified alloy composition to mole-fraction uncertainty of 0.002 for a range of important III-V alloys.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127046158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear optics and spectroscopic ellipsometry as complementary sensors to monitor and control SiGe growth 非线性光学和椭偏光谱作为互补传感器监测和控制SiGe生长
P. Wilson, K. Selinidis, D. Lim, Y. Jiang, J. Canterbury, J. Ekerdt, M. Downer
{"title":"Nonlinear optics and spectroscopic ellipsometry as complementary sensors to monitor and control SiGe growth","authors":"P. Wilson, K. Selinidis, D. Lim, Y. Jiang, J. Canterbury, J. Ekerdt, M. Downer","doi":"10.1109/LEOSST.2000.869721","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869721","url":null,"abstract":"Due to their unique sensitivity to surfaces and interfaces, nonlinear optical techniques such as second harmonic (SH) and sum frequency generation (SFG) have emerged as powerful and highly versatile spectroscopic probes. With the recent availability of commercial, tunable, femtosecond laser systems, in-situ, real-time monitoring of the optical SH responses of Si(OO1) and SiGe(OO1) systems has become possible. Such investigations have included single-wavelength SHG monitoring of CVD growth chemistry, including H coverage and desorption at Si(OO1) in real-time. Spectroscopic SH information around the E1 region of Si is presented that demonstrates adsorbate specific sensitivity to ML coverages.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129017191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robust routing for local area optical access networks 区域光接入网的鲁棒路由
M. Médard, S. Lumetta
{"title":"Robust routing for local area optical access networks","authors":"M. Médard, S. Lumetta","doi":"10.1109/LEOSST.2000.869757","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869757","url":null,"abstract":"One approach to providing the benefits of the high data rates afforded by optics is to attempt to implement traditional electronic and electro-optic approaches using optical technologies. In electronics, operations such as buffering, adding packets and dropping packets, or merging packet streams, are done with ease. In optics, however, buffering is onerous. Operations such as retrieving a packet from a traffic stream affect the whole stream. The routing approach we propose seeks to make use of the strengths of optics and avoids operations that are cumbersome or expensive in optics. Our goal is to provide robust and reliable approaches to access at optical data rates. Our design rationale is the following: avoid buffering; do not use a switch unless necessary; and, use the optical layer to provide recovery. We describe a routing such that recovery is possible even in the event of any link failure. Our routing consists of two parts: a collection portion and a distribution portion.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133736365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Managed reach optical networks 管理到达光网络
R. Wagner
{"title":"Managed reach optical networks","authors":"R. Wagner","doi":"10.1109/LEOSST.2000.869754","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869754","url":null,"abstract":"Traffic growth for Internet applications will likely dominate long-distance networks in the foreseeable future, which presents opportunities for new optical layer approaches that are tailored to Internet traffic characteristics. One important difference between the traffic patterns generated by Internet applications is that the Internet connections on average are significantly longer than the conventional voice connections, which allows for network cost savings by combining long reach transport with optical switching technologies to route and manage those connections. Fortunately there is an industry-wide effort to create the required technology for such a managed reach optical layer. The value of the optical layer will be more effectively achieved as reach lengths increase to match Internet traffic needs.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134426205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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