Progress in Quantum Electronics最新文献

{"title":"III-nitride semiconductor lasers grown on Si","authors":"Meixin Feng ,&nbsp;Jianxun Liu ,&nbsp;Qian Sun ,&nbsp;Hui Yang","doi":"10.1016/j.pquantelec.2021.100323","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100323","url":null,"abstract":"<div><p><span>III-nitride semiconductor laser<span> directly grown on Si is a potential on-chip light source for Si photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further expand their applications. Therefore, III-nitride lasers grown on Si have been pursued for about two decades. Different from GaN </span></span>homoepitaxy<span><span> on free-standing GaN substrates, III-nitride semiconductors grown on Si substrates are usually rich with strain and threading dislocations due to the large mismatch in both lattice constant and coefficient of thermal expansion between GaN and Si substrates, which hindered the realization of electrically injected lasing. The key challenges in the direct growth of high-quality III-nitride semiconductor laser materials on Si substrates, as well as their corresponding solutions, are discussed in detail. Afterwards, a comprehensive review is presented on the recent progress of III-nitride semiconductor lasers grown on Si, including Fabry-Pérot </span>cavity lasers<span>, microdisk lasers, and the lasers with nanostructures, as well as the monolithic integration of lasers on Si. Finally, the further development of III-nitride semiconductor lasers grown on Si is also discussed, including the material quality improvement and novel device structures for enhancing optical confinement and reducing electrical resistance, with a great prospect for better performance and reliability.</span></span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2021.100323","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3078179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics","authors":"Daniel J. Ironside ,&nbsp;Alec M. Skipper ,&nbsp;Ashlee M. García,&nbsp;Seth R. Bank","doi":"10.1016/j.pquantelec.2021.100316","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100316","url":null,"abstract":"<div><p><span>Integration of embedded dielectric<span><span><span> structures with crystalline III-V materials has generated significant interest, due to a host of important applications and material improvements that are central to high performance optoelectronic devices. The core challenge is the production of high-quality crystalline layers grown above embedded dielectric materials, requiring the growth processes of both lateral epitaxial overgrowth (LEO) and coalescence. In this review article, we provide a detailed and up-to-date description of the recent advances in both LEO and coalescence in III-V materials, from its extension to </span>molecular beam </span>epitaxial growth and high-quality coalescence in InP and GaAs to emerging applications that utilize encapsulated air voids to enhance </span></span>optical devices. We also explore the epitaxial integration of other materials, particularly metals, with III-V semiconductors.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2021.100316","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2263824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suspended graphene electromechanical switches for energy efficient electronics","authors":"Thomas Szkopek ,&nbsp;Eli Martel","doi":"10.1016/j.pquantelec.2020.100315","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100315","url":null,"abstract":"<div><p><span>Improving the energy efficiency of electronics is one of the grand challenges of semiconductor device physics, as global energy consumption by electronics grows in tandem with society’s growing reliance on information technology. Computationally intensive applications such as artificial intelligence further incentivizes the improvement of energy efficiency of electronics. At the corpuscular level of the transistor, the challenge is to reduce the operating voltage of the electronic switch while maintaining a sufficient on/off current ratio for reliable circuit operation. Monolayer graphene is a light material with low </span>elastic modulus for flexure and low adhesion energy, ideal for the development of electromechanical switches with low-voltage operation. Critically, monolayer graphene has an elastic modulus lower than that of any other membrane due to its atomic thinness, which in turn enables deflection with less force than any other membrane. In this article, we review recent progress in the development of low-voltage graphene electromechanical switches. We present a general overview of the motivation for low-voltage switches, thermodynamic limits, and the scaling of on/off current ratio with voltage. A summary of the theory of suspended graphene monolayer switches follows. Simple theoretical models for the scaling of pull-in voltage, actuation energy and adhesion energy with device dimensions are reviewed. Experimental work over the past decade towards the realization of suspended graphene switches in both two-terminal and three-terminal configurations is summarized. Our review concludes with an outlook on the continued development of low-voltage graphene switches.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100315","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2005560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gas lasers pumped by runaway electrons preionized diffuse discharge","authors":"Alexei N. Panchenko,&nbsp;Dmitry A. Sorokin,&nbsp;Victor F. Tarasenko","doi":"10.1016/j.pquantelec.2020.100314","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100314","url":null,"abstract":"<div><p><span><span><span>The paper is a review of gas lasers pumped by runaway electrons preionized diffuse discharge (REP DD). The various conditions under which the discharge occurs are described. It is shown that in the presence of the highly non-uniform electric field strength distribution in a gap filled with dense gases, a stable diffuse discharge is ignited without the use of additional sources of </span>ionizing radiation. This, in turn, is achieved by using discharge gaps, in which at least one of the electrodes has a small radius of curvature (e.g., “point-plane”, “blade-blade” and so on), and high-voltage (10s–100s ​kV) pulses with a (sub)nanosecond rise time. With this method of forming the discharge the runaway electrons can produce X-ray quanta in the gap and, together with them, provide preionization of the laser gas mixture. The dense nonequilibrium low-temperature plasma of this discharge can remain diffuse during the entire excitation time, including single pulse excitation and repetitive mode at the voltage </span>pulse repetition rate up to several kHz. The properties and parameters of REP DD plasma are considered. Experimental and simulated characteristics of </span>stimulated emission of REP DD plasma in various gaseous media are presented.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100314","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2324752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hexagonal boron nitride: Epitaxial growth and device applications","authors":"A. Maity,&nbsp;S.J. Grenadier,&nbsp;J. Li,&nbsp;J.Y. Lin,&nbsp;H.X. Jiang","doi":"10.1016/j.pquantelec.2020.100302","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100302","url":null,"abstract":"<div><p><span><span>As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state </span>neutron detectors<span><span>, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film </span>stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-</span></span><span>BN</span><span> supports unusually strong optical transitions<span> near the band edge and a large exciton<span> binding energy on the order of 0.7 ​eV. Due to the fact that the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h-</span></span></span>¹⁰<span><span>BN) epilayers with varying thicknesses up to 200 ​μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the </span>conductivity anisotropy nature of h-BN, 1 ​cm</span>² lateral detectors fabricated from 100 ​μm thick h-¹⁰BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h-¹⁰BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h-¹⁰BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100302","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2324751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials","authors":"Chao Zhao ,&nbsp;Zhaonan Li ,&nbsp;Tianyi Tang ,&nbsp;Jiaqian Sun ,&nbsp;Wenkang Zhan ,&nbsp;Bo Xu ,&nbsp;Huajun Sun ,&nbsp;Hui Jiang ,&nbsp;Kong Liu ,&nbsp;Shengchun Qu ,&nbsp;Zhijie Wang ,&nbsp;Zhanguo Wang","doi":"10.1016/j.pquantelec.2020.100313","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100313","url":null,"abstract":"<div><p><span>III-V semiconductor materials are the basis of photonic devices<span> due to their unique optical properties. There is an increasing demand for fabricating these devices on unconventional substrates for various applications, such as </span></span>silicon<span><span> photonic integrated circuits<span>, flexible optoelectronic<span> devices, and ultralow-profile photonics. However, the III-V semiconductor </span></span></span>epitaxy<span><span><span> often encounters problems from the lattice, thermal, and polarity mismatches with foreign substrates. In recent years, the epitaxial growth of defect-free group–III–V materials through two-dimensional materials has exploded as an attractive area of research. The nonconventional epitaxy way demonstrates potential advantages over conventional ones, including high quality and freedom of using diverse substrates, making them viable candidates for emerging applications. Herein, we offer a complete review of the recent achievements made in this field. We summarize the growth conditions and mechanisms involved in fabricating these structures through different two-dimensional materials. The unique optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective applications in optics and </span>nanophotonics, including light-emitting diodes, </span>photodetectors, and solar cells. Finally, we detail the remaining obstacles and challenges to exploit the potential for such practical applications fully.</span></span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100313","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Special issue in honor of the 70th birthday of Professor James J. Coleman","authors":"Xiuling Li,&nbsp;Catrina Coleman,&nbsp;Weidong Zhou","doi":"10.1016/j.pquantelec.2020.100301","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100301","url":null,"abstract":"","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100301","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2183577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoscale selective area epitaxy: From semiconductor lasers to single-photon sources","authors":"V.B. Verma ,&nbsp;V.C. Elarde","doi":"10.1016/j.pquantelec.2020.100305","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100305","url":null,"abstract":"<div><p><span><span>We present a review of selective area epitaxy and its history in the evolution of </span>semiconductor lasers<span>, with a focus on its application at the nanoscale level in the development of </span></span>quantum dot<span> and nanopore<span> lasers. Recent applications will be discussed including applications to integrated photonics and quantum photonics, such as patterned single-photon sources.</span></span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100305","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration","authors":"P. Daniel Dapkus ,&nbsp;Chun Yung Chi ,&nbsp;Sang Jun Choi ,&nbsp;Hyung Joon Chu ,&nbsp;Mitchell Dreiske ,&nbsp;Rijuan Li ,&nbsp;Yenting Lin ,&nbsp;Yoshitake Nakajima ,&nbsp;Dawei Ren ,&nbsp;Ryan Stevenson ,&nbsp;Maoqing Yao ,&nbsp;Ting Wei Yeh ,&nbsp;Hanmin Zhao","doi":"10.1016/j.pquantelec.2020.100304","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100304","url":null,"abstract":"<div><p><span>Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition<span> is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and </span></span>nanostructure integration is made. Throughout, the pioneering work led by Professor James J. Coleman is used to illustrate the value of using selective growth for various applications.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100304","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2005562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strained-layer quantum well materials grown by MOCVD for diode laser application","authors":"Luke J. Mawst ,&nbsp;Honghyuk Kim ,&nbsp;Gary Smith ,&nbsp;Wei Sun ,&nbsp;Nelson Tansu","doi":"10.1016/j.pquantelec.2020.100303","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100303","url":null,"abstract":"","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":11.7,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100303","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2183578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}