Progress in Quantum Electronics最新文献

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III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration 用于异质集成的 III 族氮化物半导体膜电子学和光电子学
IF 7.4 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2024-11-01 DOI: 10.1016/j.pquantelec.2024.100536
Renfeng Chen , Yijian Song , Rui He , Junxi Wang , Jinmin Li , Tongbo Wei
{"title":"III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration","authors":"Renfeng Chen ,&nbsp;Yijian Song ,&nbsp;Rui He ,&nbsp;Junxi Wang ,&nbsp;Jinmin Li ,&nbsp;Tongbo Wei","doi":"10.1016/j.pquantelec.2024.100536","DOIUrl":"10.1016/j.pquantelec.2024.100536","url":null,"abstract":"<div><div>The rapidly developing III-nitrides materials and devices technologies are driving the advancements in hybrid heterogeneous structures for multi-material and multifunctional electronic or optoelectronic integrated systems. Beyond heteroepitaxial growth, the process integrations of freestanding thin-film devices open up more possibilities for high levels of integration and multi-functionalization applications, overcoming the limitations of epitaxial substrate materials. Benefiting from the abundant and exceptional electrical and photoelectrical properties of III-nitrides, the heterogeneous integration of thin-film devices significantly enhances the functional capabilities in the fields of on-chip optical communication, micro-LED display, and flexible sensing. In this review, we present a comprehensive overview of freestanding thin-film device fabrication technology and its integration strategies. We discuss the characteristics of both conventional and advanced III-nitride epilayer transfer technologies, focusing on lift-off, transfer, bonding, and integration process. Promising applications are summarized based on the integration technology of transferable III-nitride thin-film devices. Additionally, we analyze the remaining challenges in manufacturing and application of III-nitride thin-film devices for advanced heterogeneous integrations. The further development of these technologies will promote the research of III-nitrides in pioneering fields, including high-speed photoelectric integrated communication system, cost-effective Micro-LED display and reliable biosensing applications.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"98 ","pages":"Article 100536"},"PeriodicalIF":7.4,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142643102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Elemental segregation and dimensional separation in halide perovskite light-emitting diodes 卤化物过氧化物发光二极管中的元素偏析和尺寸分离
IF 7.4 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2024-11-01 DOI: 10.1016/j.pquantelec.2024.100537
Seok Joo Yang , Yoon Ho Lee , Kagachi Tateno , Letian Dou
{"title":"Elemental segregation and dimensional separation in halide perovskite light-emitting diodes","authors":"Seok Joo Yang ,&nbsp;Yoon Ho Lee ,&nbsp;Kagachi Tateno ,&nbsp;Letian Dou","doi":"10.1016/j.pquantelec.2024.100537","DOIUrl":"10.1016/j.pquantelec.2024.100537","url":null,"abstract":"<div><div>Compositional engineering is a promising avenue for enhancing external quantum efficiency and adjusting emission wavelengths in halide perovskite light-emitting diodes (PeLEDs). However, the occurrence of ion migration within these materials poses a notable challenge as it can lead to elemental segregation during crystallization or under external stimuli such as heat, light, and bias, especially when simple mixing and alloying are employed. Such non-uniform distribution of elements detrimentally impacts color purity and long-term device stability in PeLEDs, highlighting the need to address elemental segregation issues. Additionally, quasi-2D perovskites have garnered attention for their potential to mitigate ion migration while maintaining superior optoelectronic properties attributable to the quantum confinement effect. Nevertheless, precise control over dimensionality remains challenging due to the thermodynamically favored 2D/3D phase separation, hindering efficient energy transfer. This review aims to provide an in-depth analysis of these phenomena. It explores the underlying mechanisms of elemental segregation and dimensionality separation, while summarizing recent efforts to overcome these challenges. Furthermore, the review discusses ongoing obstacles and suggests potential directions for future research in this evolving field.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"98 ","pages":"Article 100537"},"PeriodicalIF":7.4,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142643096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mesoscopic and macroscopic quantum correlations in photonic, atomic and optomechanical systems 光子、原子和光力学系统中的介观和宏观量子关联
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.pquantelec.2022.100396
Run Yan Teh , Laura Rosales-Zarate , Peter D. Drummond , M.D. Reid
{"title":"Mesoscopic and macroscopic quantum correlations in photonic, atomic and optomechanical systems","authors":"Run Yan Teh ,&nbsp;Laura Rosales-Zarate ,&nbsp;Peter D. Drummond ,&nbsp;M.D. Reid","doi":"10.1016/j.pquantelec.2022.100396","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2022.100396","url":null,"abstract":"<div><p><span><span>This paper reviews the progress that has been made in our knowledge of quantum correlations at the mesoscopic and macroscopic level. We begin by summarizing the Einstein-Podolsky-Rosen (EPR) argument and the Bell correlations that cannot be explained by local hidden variable theories. It was originally an open question as to whether (and how) such quantum correlations could occur on a macroscopic scale, since this would seem to contradict the correspondence principle. The purpose of this review is to examine how this question has been answered over the decades since the original papers of EPR and Bell. We first review work relating to higher spin measurements which revealed that </span>macroscopic quantum states could exhibit Bell correlations. This covers higher dimensional, multiparticle and continuous-variable EPR and Bell states where measurements on a single system give a spectrum of outcomes, and also multipartite states where measurements are made at multiple separated sites. It appeared that the macroscopic quantum observations were for an increasingly limited span of measurement settings and required a fine resolution of outcomes. Motivated by this, we next review correlations for macroscopic superposition states, and examine predictions for the violation of Leggett-Garg inequalities using dynamical quantum systems. These results reveal Bell correlations for coarse-grained measurements which need only distinguish between macroscopically distinct states, thus bringing into question the validity of certain forms of macroscopic realism. Finally, we review progress for massive systems, including Bose-Einstein condensates and optomechanical </span>oscillators<span>, where EPR-type correlations have been observed between massive systems. Experiments are summarized which support the predictions of quantum mechanics in mesoscopic regimes.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"90 ","pages":"Article 100396"},"PeriodicalIF":11.7,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3034945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Advances in single crystals and thin films of chiral hybrid metal halides 手性杂化金属卤化物单晶及薄膜研究进展
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2022-03-01 DOI: 10.1016/j.pquantelec.2022.100375
Zhihang Guo , Junzi Li , Rui Chen , Tingchao He
{"title":"Advances in single crystals and thin films of chiral hybrid metal halides","authors":"Zhihang Guo ,&nbsp;Junzi Li ,&nbsp;Rui Chen ,&nbsp;Tingchao He","doi":"10.1016/j.pquantelec.2022.100375","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2022.100375","url":null,"abstract":"<div><p><span><span>Chiral organic–inorganic hybrid metal halides (HMHs), as an emerging class of chiral </span>semiconductor materials<span><span>, have attracted unparalleled interest from multi-purpose perspectives, as a result of their easily accessible solution-grown methods, plentiful chemical structure and composition, as well as unique and exciting </span>optoelectronic<span> properties. Recently, substantial progress has been made in the synthesis of chiral HMHs, spectroscopic characterization and fabrication of optoelectronic devices. Although several reviews about the chiroptical properties and applications of chiral HMHs have been published, the comprehensive summary of the basic structural frameworks, fundamental physics and strategies for the modulation of </span></span></span>optical activity<span>, which are vital for the design of chiral HMHs and development of relevant optoelectronic applications, are still insufficient. In this review, we summarize the research progress from fundamentals to applications for the single crystals<span> and thin films of chiral HMHs that are conducive to the development of practical optoelectronic devices. First, diverse structural frameworks and synthetic methods of chiral HMHs are systematically summarized. Afterward, fundamental physics and strategies for the modulation of optical activity as well as their related optoelectronic applications are comprehensively reviewed. Finally, we put forward the current challenges in this rapidly evolving field and present an outlook on future prospects to further develop chiral HMHs for various applications.</span></span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"82 ","pages":"Article 100375"},"PeriodicalIF":11.7,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"1613117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A review of ptychographic techniques for ultrashort pulse measurement 超短脉冲测量的体表技术综述
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100364
Daniel J. Kane, Andrei B. Vakhtin
{"title":"A review of ptychographic techniques for ultrashort pulse measurement","authors":"Daniel J. Kane,&nbsp;Andrei B. Vakhtin","doi":"10.1016/j.pquantelec.2021.100364","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100364","url":null,"abstract":"<div><p>The measurement of optical ultrafast laser<span> pulses is done indirectly because the required bandwidth to measure these pulses exceeds the bandwidth of current electronics. As a result, this measurement problem is often posed as a 1-D phase retrieval problem, which is fraught with ambiguities. The phase retrieval method known as ptychography solves this problem by making it possible to measure ultrafast pulses in either the time domain or the frequency domain. One well known algorithm is the principal components generalized projections algorithm (PCGPA) for extracting pulses from Frequency-Resolved Optical Gating (FROG) measurements. Here, we discuss the development of the PCPGA and introduce new developments including an operator formalism that allows for the convenient addition of external constraints and the development of more robust algorithms. A close cousin, the ptychographic iterative engine will also be covered and compared to the PCGPA. Additional developments using other algorithmic strategies will also be discussed along with new developments combining optics and high-speed electronics to achieve megahertz measurement rates.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"81 ","pages":"Article 100364"},"PeriodicalIF":11.7,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2142396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On the principle operation of tunneling injection quantum dot lasers 隧道注入量子点激光器的工作原理
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100362
Igor Khanonkin , Sven Bauer , Vissarion Mikhelashvili , Ori Eyal , Michael Lorke , Frank Jahnke , Johann Peter Reithmaier , Gadi Eisenstein
{"title":"On the principle operation of tunneling injection quantum dot lasers","authors":"Igor Khanonkin ,&nbsp;Sven Bauer ,&nbsp;Vissarion Mikhelashvili ,&nbsp;Ori Eyal ,&nbsp;Michael Lorke ,&nbsp;Frank Jahnke ,&nbsp;Johann Peter Reithmaier ,&nbsp;Gadi Eisenstein","doi":"10.1016/j.pquantelec.2021.100362","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100362","url":null,"abstract":"<div><p><span><span>The concept of tunneling injection was introduced in the 1990's to improve the dynamical properties of semiconductor lasers<span> by avoiding the problem of hot carrier injection which increase the gain nonlinearity and hence limit the modulation capabilities. Indeed, tunneling injection led to record modulation speeds in </span></span>quantum well lasers. Employing tunneling injection in </span>quantum dot<span><span> lasers is significantly more complicated. Tunneling injection is based on an energy band alignment between a carrier reservoir and the active region where laser oscillation takes place. However, the inherent inhomogeneity of self-assembled quantum dots prevents an unequivocal band alignment and can cause the tunneling injection process to actually deteriorate the laser performance compared to nominally identical quantum dot lasers that have no tunneling section. Understanding the complex process of tunneling injection in quantum dot lasers requires a comprehensive study where different aspects are analyzed theoretically and experimentally. In this paper we describe the technology of such lasers in the InP material system followed by a microscopic analysis of the detailed electrical characterization which is correlated to the electro-optic properties yields information about the exact carrier transport mechanism at bias levels of almost zero to well above threshold. A tunneling injection quantum dot </span>optical amplifier was used for multi wavelength pump probe characterization from which it is clear why tunneling injection often deteriorates laser performance and determines how to design a structure which can take advantage of tunneling injection. Finally, we present a direct comparison between the modulation response of a tunneling injection quantum dot laser and a twin structure that has no tunneling injection section.</span></p><p>The broad study sheds light on the fundamental tunneling injection process that can guide the design of an optimum laser where tunneling injection will be taken full advantage of and will improve the dynamical properties.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"81 ","pages":"Article 100362"},"PeriodicalIF":11.7,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"1613118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Structured photoionization bands of alkali diatomic molecules 碱双原子分子的结构光离带
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100365
Goran Pichler
{"title":"Structured photoionization bands of alkali diatomic molecules","authors":"Goran Pichler","doi":"10.1016/j.pquantelec.2021.100365","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100365","url":null,"abstract":"<div><p><span><span>We present a review on the photoionization bands that can be found in the far ultraviolet part of the spectrum using all sapphire cells in absorption experiments with hot alkali vapor. We describe </span>cesium and </span>rubidium dimers which have very pronounced photoionization bands together with bialkali mixtures like KCs and RbCs. We explain the origin of these peculiar bands as special molecular transitions between the ground state of the neutral molecule and exited states of the ionized molecule as a direct ionization process. We also described the diffuse bands as transition from the same ground state molecule to doubly excited molecular state, as an indirect ionization process. Finally, we believe that these two pathways may interfere resulting in a complex structure revealing the observed diffuse bands.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"81 ","pages":"Article 100365"},"PeriodicalIF":11.7,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2363133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Special issue in honor of the 70th birthday of Professor J. Gary Eden 纪念盖里·艾登教授70岁生日的特刊
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2022-01-01 DOI: 10.1016/j.pquantelec.2021.100366
Martin Dawson , D.B. Geohegan (Guest Editor) , T.M. Spinka (Guest Editor) , C. Jagadish (Guest Editor)
{"title":"Special issue in honor of the 70th birthday of Professor J. Gary Eden","authors":"Martin Dawson ,&nbsp;D.B. Geohegan (Guest Editor) ,&nbsp;T.M. Spinka (Guest Editor) ,&nbsp;C. Jagadish (Guest Editor)","doi":"10.1016/j.pquantelec.2021.100366","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100366","url":null,"abstract":"","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"81 ","pages":"Article 100366"},"PeriodicalIF":11.7,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2818901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biological tunable photonics: Emerging optoelectronic applications manipulated by living biomaterials 生物可调谐光子学:由活体生物材料操纵的新兴光电应用
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2021-11-01 DOI: 10.1016/j.pquantelec.2021.100361
Yifan Zhang , Ziyihui Wang , Yu-Cheng Chen
{"title":"Biological tunable photonics: Emerging optoelectronic applications manipulated by living biomaterials","authors":"Yifan Zhang ,&nbsp;Ziyihui Wang ,&nbsp;Yu-Cheng Chen","doi":"10.1016/j.pquantelec.2021.100361","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100361","url":null,"abstract":"<div><p>Over the past few decades, optoelectronic devices have played a key role in human life and modern technology. To meet the development trends of the industry, photonics with tunable functions have emerged as building blocks with immense potential in controlling light–matter interactions, sensors, and integrated photonics. Compared with artificially designed materials and physical approaches, stimuli-responsive biointerfaces enable a higher level of functionalities and versatile means to tailor optical responses at the nanoscale. Recent advances in biological tunable photonics have attracted tremendous attention owing to the incorporation of living biomaterials into organic photonic and photoelectric devices. In this review, we highlight the advances made in biological tunable photonics during the past five years. We begin with an overview of the competency of natural biological materials, followed by the introduction of key stimuli that have a dominant influence on the development of active biointerfaces. Lastly, we present a comprehensive summary of optoelectronic applications that utilize living biomaterials as active controls. Such applications include bioactivated light-emitting diodes, biological lasers, active plasmonics, robotics, biological logic gates, light-harvesting antennas, molecular photonic wires, bioenergy, and biophotovoltaics. The opportunities and challenges for future research directions are also briefly discussed.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"80 ","pages":"Article 100361"},"PeriodicalIF":11.7,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"1784749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High-temperature terahertz quantum cascade lasers 高温太赫兹量子级联激光器
IF 11.7 1区 物理与天体物理
Progress in Quantum Electronics Pub Date : 2021-11-01 DOI: 10.1016/j.pquantelec.2021.100363
Boyu Wen, Dayan Ban
{"title":"High-temperature terahertz quantum cascade lasers","authors":"Boyu Wen,&nbsp;Dayan Ban","doi":"10.1016/j.pquantelec.2021.100363","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2021.100363","url":null,"abstract":"<div><p>The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the most promising radiation sources in the THz region owing to its high output power and broad frequency coverage from ∼1.3 to ∼5.4 ​THz and sub-terahertz, without and with assistance of external strong magnetic field. The operation of THz QCLs, however, has thus far been limited to applications below room temperature. Recent advances in THz QCL research have principally focused on optimization of quantum design, fabrication, and growth techniques to improve the maximum operating temperature of THz QCLs; these efforts culminated in a recent demonstration of pulse-mode lasing at temperature up to 250 ​K. Research interests continue to be propelled as new maximum lasing temperature record are set, heating up the race to realize room-temperature operation of THz QCLs. This paper critically reviews key achievements and milestones of quantum designs, fabrication techniques, and simulation methods applicable to the high temperature operation of THz QCLs. In addition, this paper provides a succinct summary of efforts in this field to pinpoint the remaining challenges and provide a comprehensive picture for future trends in THz QCL research.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"80 ","pages":"Article 100363"},"PeriodicalIF":11.7,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3078177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
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