Progress in Quantum Electronics最新文献

{"title":"Quantum emitters based on hexagonal boron nitride for next-generation quantum technology","authors":"Semi Im ,&nbsp;Seokho Moon ,&nbsp;Jawon Kim,&nbsp;Jaesub Song,&nbsp;Changuk Ji,&nbsp;Seonghyeon Pak,&nbsp;Jong Kyu Kim","doi":"10.1016/j.pquantelec.2025.100576","DOIUrl":"10.1016/j.pquantelec.2025.100576","url":null,"abstract":"<div><div>Hexagonal boron nitride (h-BN), a wide-bandgap layered van der Waals material, has garnered significant attention due to its exceptional properties, making it a highly versatile material in various applications. In particular, recent studies have demonstrated that h-BN hosts stable quantum emitters over a broad spectral range at room temperature, positioning it as a compelling candidate for next generation quantum technology platforms. In this review, we present a comprehensive analysis of optically active defects in h-BN, focusing on their structural and optical properties. In addition, we discuss various defect generation methods and excitation techniques aimed at achieving efficient quantum emission. Furthermore, we highlight advances in integrating h-BN quantum emitters into device architectures, emphasizing their compatibility with photonic circuits and scalable quantum systems. The progress, challenges, and future outlook of h-BN-based quantum emitters as a transformative platform for next-generation quantum technologies are discussed.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100576"},"PeriodicalIF":7.4,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144290017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors","authors":"Ho-Young Kim ,&nbsp;Ray-Hua Horng ,&nbsp;Hiroshi Amano ,&nbsp;Tae-Yeon Seong","doi":"10.1016/j.pquantelec.2025.100578","DOIUrl":"10.1016/j.pquantelec.2025.100578","url":null,"abstract":"<div><div>AlGaN/GaN-based high electron mobility transistors (HEMTs) hold significant technological importance due to their applications in power electronics, radio frequency (RF) amplifiers, and microwave communication systems. A critical factor affecting the performance of AlGaN/GaN HEMTs is the formation of high-quality ohmic contacts to the source and drain, which facilitates efficient carrier injection from metal electrodes to the semiconductor. Therefore, various approaches have been employed to achieve the formation of high-quality ohmic contacts. This review presents recent advancements in ohmic contact technology for AlGaN/GaN HEMTs. Specifically, we introduce and discuss contact technologies focusing on multilayer schemes under different annealing conditions, Au-free metallization schemes, surface treatments, non-traditional annealing processes, recess etching, selective area regrowth, and ion implantation.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100578"},"PeriodicalIF":7.4,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144271593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progresses on InGaN red micro-LEDs for display","authors":"Anda Cheng ,&nbsp;Zhibiao Hao ,&nbsp;Changzheng Sun ,&nbsp;Bing Xiong ,&nbsp;Yanjun Han ,&nbsp;Jian Wang ,&nbsp;Hongtao Li ,&nbsp;Lin Gan ,&nbsp;Yi Luo ,&nbsp;Lai Wang","doi":"10.1016/j.pquantelec.2025.100575","DOIUrl":"10.1016/j.pquantelec.2025.100575","url":null,"abstract":"<div><div>Micro-scale light-emitting diodes (micro-LEDs), with their high brightness, high resolution, and low power consumption, are emerging as a promising candidate for the next-generation display. Among them, InGaN red micro-LEDs, as a crucial component of full-color micro-displays, have attracted significant attention for their smaller size effect, higher thermal stability, and compatibility with blue and green micro-LED fabrication processes and so on, when compared to AlGaInP red micro-LEDs. However, for next-generation display technologies such as augmented reality (AR), InGaN red micro-LEDs still fall short of meeting the requirements. Specifically, the efficiency of InGaN red micro-LEDs with the ultra-small size needed for AR applications is still very low, necessitating a high working current density. Unfortunately, a high current density leads to a significant blueshift in the emission wavelength, which results in color deviation, failing to meet the requirements for red display devices. This review has introduced two approaches to address the aforementioned issues, namely enhancing the efficiency of InGaN red micro-LEDs or suppressing the blueshift, and has listed the performances of recent typical InGaN red micro-LEDs. Finally, the potential of InGaN red micro-LEDs in the full-color monolithic displays has been discussed.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100575"},"PeriodicalIF":7.4,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144271592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “Quantum non-Gaussianity of light and atoms” [Progress Quant. Electron. 83 (2022) 100395]","authors":"Lukáš Lachman,&nbsp;Radim Filip","doi":"10.1016/j.pquantelec.2025.100561","DOIUrl":"10.1016/j.pquantelec.2025.100561","url":null,"abstract":"","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100561"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144189836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin excitations and dynamics in 2D magnets: An overview of magnons and magnetic skyrmions","authors":"Yingying Wu ,&nbsp;Luis Balicas ,&nbsp;Ran Cheng ,&nbsp;Xiao-Xiao Zhang","doi":"10.1016/j.pquantelec.2025.100564","DOIUrl":"10.1016/j.pquantelec.2025.100564","url":null,"abstract":"<div><div>van der Waals magnetic materials open up exciting possibilities to investigate fundamental spin properties in low-dimensional systems and to build compact functional spintronic structures. This review focuses on the recent progress in two-dimensional(2D) magnets that explore beyond the homogenous magnetically-ordered state, including magnons (spin waves), magnetic skyrmions, and complex magnetic domains. Properties of these spin and topology excitations in 2D magnets provide insights into spin-orbit interactions and other forms of coupling between electrons, phonons, and spin-dependent excitations. Such spin-based quasiparticles can also serve as information carriers for next-generation high-speed computing elements. We will first lay out the general theoretical basis of dynamical responses in magnetic systems, followed by detailed descriptions of experimental progress in magnons and spin textures (including magnetic domains and skyrmions). Discussion on the experimental techniques and future perspectives are also included.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100564"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143843903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Past, present, and future of microconcentrating photovoltaics","authors":"Alex J. Grede ,&nbsp;Maxwell Sun ,&nbsp;Noel C. Giebink","doi":"10.1016/j.pquantelec.2025.100562","DOIUrl":"10.1016/j.pquantelec.2025.100562","url":null,"abstract":"<div><div>Concentrating photovoltaics (CPV) use inexpensive optics to concentrate sunlight onto high efficiency solar cells. Over the past decade, the field of CPV has evolved from large systems aimed at grid-scale power generation toward <em>micro</em>concentrating photovoltaics (µCPV) that employ miniaturized cells and compact optics to address new, performance-driven applications such as agrivoltaics and space power. This review summarizes the development, present status, and future prospects of this emerging subfield. We discuss the main components that make up a typical µCPV system and highlight some of the key results achieved to date before concluding with a look forward at the milestones that will be needed to transition µCPV out of the lab and into the real world.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100562"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143877206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrically reconfigurable intelligent optoelectronics in 2-D van der Waals materials","authors":"Yu Wang ,&nbsp;Dehui Zhang ,&nbsp;Yihao Song ,&nbsp;Jea Jung Lee ,&nbsp;Meng Tian ,&nbsp;Souvik Biswas ,&nbsp;Fengnian Xia ,&nbsp;Qiushi Guo","doi":"10.1016/j.pquantelec.2025.100563","DOIUrl":"10.1016/j.pquantelec.2025.100563","url":null,"abstract":"<div><div>In optoelectronics, achieving electrical reconfigurability is crucial as it enables the encoding, decoding, manipulating, and processing of information carried by light. In recent years, two-dimensional van der Waals (2-D vdW) materials have emerged as promising platforms for realizing reconfigurable optoelectronic devices. Compared to materials with bulk crystalline lattice, 2-D vdW materials offer superior electrical reconfigurability due to high surface-to-volume ratio, quantum confinement, reduced dielectric screening effect, and strong dipole resonances. Additionally, their unique band structures and associated topology and quantum geometry provide novel tuning capabilities. This review article seeks to establish a connection between the fundamental physics underlying reconfigurable optoelectronics in 2-D materials and their burgeoning applications in intelligent optoelectronics. We first survey various electrically reconfigurable properties of 2-D vdW materials and the underlying tuning mechanisms. Then we highlight the emerging applications of such devices, including dynamic intensity, phase and polarization control, and intelligent sensing. Finally, we discuss the opportunities for future advancements in this field.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100563"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143898440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in high-performance millimeter-Wave acoustic resonators and filters using thin-film lithium niobate","authors":"Ruochen Lu","doi":"10.1016/j.pquantelec.2025.100565","DOIUrl":"10.1016/j.pquantelec.2025.100565","url":null,"abstract":"<div><div>This paper reviews recent advances in millimeter-wave (mmWave) piezoelectric acoustic resonators and filters, based on thin-film lithium niobate (LN) platforms. Recent utilization of transferred thin-film LN (TFLN) on various substrates has enabled high-performance microelectromechanical systems (MEMS) devices. For mmWave applications, TFLN supports an assortment of acoustic modes with large electromechanical coupling (<em>k</em>^<em>2</em>), high quality factors (<em>Q</em>), and great frequency scalability. These features have led to significant recent performance enhancements in low-loss and wideband resonators and filters using TFLN. More specifically, acoustic resonators between 18 and 100 GHz have been demonstrated with low loss, compact form factors, and strong piezoelectric coupling. Acoustic filters have also been shown at mmWave frequency ranges, beyond the conventional sub-6 GHz operating range, toward addressing the stringent demands of future wireless communication systems. The review starts by analyzing the background and challenges of frequency scaling incumbent acoustic technologies, then introduces the unique potentials of TFLN platforms for mmWave resonator applications, highlighting fabrication techniques and novel device architecture. Beyond this, periodically poled piezoelectric film (P3F) LN is highlighted. The multi-layer structure with alternating orientations in adjacent layers enables high figure of merit (FoM = <em>k</em>^<em>2</em><em>∙Q</em>) acoustic devices at mmWave, efficiently coupling electrical and mechanical energy while minimizing damping in thicker film stacks. Finally, mmWave acoustic filter implementations have been reviewed and followed by outlooks for future work in mmWave acoustics.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100565"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144088793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface plasmon coupling for enhancing light emission and color conversion","authors":"Shaobo Yang,&nbsp;Yang Kuo,&nbsp;Chih-Chung Yang","doi":"10.1016/j.pquantelec.2025.100553","DOIUrl":"10.1016/j.pquantelec.2025.100553","url":null,"abstract":"&lt;div&gt;&lt;div&gt;The efficiencies of light emission and absorption are two key factors for the effective operations of many optoelectronic devices. Those efficiencies can be improved through the efforts of upgrading material quality and optimizing device design. When such an improvement reaches a limit in considering the technological difficulty and/or fabrication cost, other means based on nano-photonics techniques deserve consideration. In particular, due to the development of the nano-fabrication technology and the trend of shrinking device dimension, those techniques based on near-field interactions are attractive. Among them, surface plasmon (SP) coupling is a powerful method for enhancing the emission and absorption efficiencies. Also, when color conversion is needed, the Förster resonance energy transfer (FRET) is an effective approach for transferring energy from a donor into an acceptor within a short range. In this paper, the basic principles, the fundamental behaviors, and the applications to the enhancements of light emission and color conversion of SP coupling are reviewed. The SP coupling here is referred to as that not strong enough to produce the phenomenon of Rabi splitting. For effective color conversion, the combined effects of FRET and SP coupling are also discussed. Meanwhile, the nanoscale-cavity effect is introduced to combine with FRET and SP coupling for further enhancing the emission and color conversion efficiencies. The review starts with the behaviors of the SP resonances of metal nanostructures, particularly those of metal nanoparticles (NPs), including deposited surface metal NP and chemically synthesized metal NP, due to their easy fabrication, low cost, and strong localized SP resonance. Among the metals with the negative real parts of dielectric constants for inducing SP resonances in the ultraviolet through near-infrared spectral range, Ag is the major concern in this review because of its high SP resonance strength and low dissipation. SP coupling can be understood as a process of the energy transfer from a light emitter into an SP resonance mode for creating an alternative emission channel, i.e., the coherent SP radiation. A model and a derivative simulation algorithm, which take the Purcell effect into account, are reviewed for interpreting experimental observations. SP coupling can be used for improving the performances of a light-emitting diode (LED), including the enhancements of internal quantum efficiency and electroluminescence intensity, the reduction of the efficiency droop effect, the increase of modulation bandwidth, and the generation of partially polarized light in an LED. SP coupling can also be used for increasing the efficiency of a color conversion process. In such a process, the energy donor, acceptor, and metal nanostructure can be coupled together through an SP resonance mode around the donor emission or acceptor absorption wavelength for forming a three-body coupling system. Such a coupling proce","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"99 ","pages":"Article 100553"},"PeriodicalIF":7.4,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142967787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum electronics on quantum liquids and solids","authors":"Wei Guo ,&nbsp;Denis Konstantinov ,&nbsp;Dafei Jin","doi":"10.1016/j.pquantelec.2024.100552","DOIUrl":"10.1016/j.pquantelec.2024.100552","url":null,"abstract":"<div><div>Nonpolar atoms or molecules with low particle mass and weak inter-particle interactions can form quantum liquids and solids (QLS) at low temperatures. Excess electrons naturally bind to the surfaces of QLS in a vacuum, exhibiting unique quantum electronic behaviors in two and lower dimensions. This article reviews the historical development and recent progress in this field. Key topics include collective and individual electron transport on liquid helium, solid neon, and solid hydrogen; theoretical proposals and experimental efforts towards single-electron qubits on superfluid helium; experimental realization of single-electron charge qubits on solid neon and related theoretical investigation. Finally, we discuss and envision future exploration of quantum electronics in heterogeneous QLS systems.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"99 ","pages":"Article 100552"},"PeriodicalIF":7.4,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143141550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}