Progress in Quantum Electronics最新文献

{"title":"Magnetic field driven emergent phenomena: Insights from magneto-optics and nanoscopy","authors":"Zhenbing Dai ,&nbsp;Bing Cheng ,&nbsp;Ran Jing ,&nbsp;Lukas Wehmeier ,&nbsp;Zhurun Ji ,&nbsp;D.N. Basov ,&nbsp;Guangxin Ni ,&nbsp;Mengkun Liu","doi":"10.1016/j.pquantelec.2025.100585","DOIUrl":"10.1016/j.pquantelec.2025.100585","url":null,"abstract":"<div><div>This review explores magnetic field-driven emergent phenomena across various material systems, emphasizing the pivotal roles of magneto-optical and nanoscopy techniques. We examine fundamental aspects of Landau electrodynamics in both 2D and 3D systems, including quantum Hall and topological magnetoelectric effects in graphene and topological insulators. Particularly attention is given to magnetic excitations and magnetopolaritons, such as surface magnon polaritons, magnetoplasmons, and magnetoexcitons in novel quantum materials, including quantum magnets and hybrid heterostructures. Advanced imaging techniques, such as scattering-type scanning near-field optical microscopy (SNOM) and microwave impedance microscopy, are showcased for their capability to resolve these phenomena with microscopic and nanoscopic resolution. These insights are complemented by discussions of advanced experimental approaches, including cryogenic environments, ultrafast pump-probe techniques, and the integration of magnetic fields into near-field optical methodologies. We further investigate the potential of these imaging techniques for unraveling complex magnetic orders, quantum phases, and correlated electronic behaviors. Finally, we offer perspectives on future research directions and highlight emerging opportunities in the evolving field of optical magneto-nanoscopy.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100585"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145109674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid classical-quantum communication networks","authors":"Joseph M. Lukens ,&nbsp;Nicholas A. Peters ,&nbsp;Bing Qi","doi":"10.1016/j.pquantelec.2025.100586","DOIUrl":"10.1016/j.pquantelec.2025.100586","url":null,"abstract":"<div><div>Over the past several decades, the proliferation of global classical communication networks has transformed various facets of human society. Concurrently, quantum networking has emerged as a dynamic field of research, driven by its potential applications in distributed quantum computing, quantum sensor networks, and secure communications. This prompts a fundamental question: rather than constructing quantum networks from scratch, can we harness the widely available classical fiber-optic infrastructure to establish hybrid quantum–classical networks? This paper aims to provide a comprehensive review of ongoing research endeavors aimed at integrating quantum communication protocols, such as quantum key distribution, into existing lightwave networks. This approach offers the substantial advantage of reducing implementation costs by allowing classical and quantum communication protocols to share optical fibers, communication hardware, and other network control resources—arguably the most pragmatic solution in the near term. In the long run, classical communication will also reap the rewards of innovative quantum communication technologies, such as quantum memories and repeaters. Accordingly, our vision for the future of the Internet is that of heterogeneous communication networks thoughtfully designed for the seamless support of both classical and quantum communications.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100586"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145156694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and characterization of nanostructured topological materials","authors":"Qinyuan Jiang ,&nbsp;Arka Chatterjee ,&nbsp;Shengxi Huang","doi":"10.1016/j.pquantelec.2025.100588","DOIUrl":"10.1016/j.pquantelec.2025.100588","url":null,"abstract":"<div><div>As a branch of quantum materials, topological materials are noted for their topologically nontrivial band structures, massless Dirac or Weyl fermions, strong spin-orbit coupling, and boundary-protected states, endowed with exotic physical properties totally different from those of conventional insulators and metals. In this era of information intelligence, topological materials with unconventional properties have drawn increasing attention, with the growing demand for high-performance electronics, spintronics, optoelectronics, thermoelectrics, <em>etc</em>. Besides, compared to bulk forms, nanostructured topological materials are more compatible with electronic and optoelectronic applications in terms of device integration and fabrication. They also possess enhanced contributions from surface/edge states and geometry-regulated band structures. Therefore, there is a demand for manufacturing and studying nanostructured topological materials. With this motivation, recently there have been burgeoning explorations of nanostructured topological materials. In this review, we systematically summarize the exciting proceedings in both synthesis and characterizations of nanostructured topological materials. We start from the introduction of state-of-the-art synthesis methods, as well as their capability of structural control, feasibility, and potential for scaling up. Then, we summarize the characterization tools and the corresponding properties of nanostructured topological materials, in which the origins of these topologically-related physical properties and their nanostructure dependences are elaborated. Perspectives on the challenges and opportunities are also given in the final part to summarize the advances and propose possible directions in the field of nanostructured topological materials.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100588"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145314993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in intelligent epitaxy of semiconductor materials","authors":"Chao Shen ,&nbsp;Kang Yang ,&nbsp;Wenkang Zhan ,&nbsp;Bo Xu ,&nbsp;Zhaonan Li ,&nbsp;Shujie Pan ,&nbsp;Siming Chen ,&nbsp;Zhanguo Wang ,&nbsp;Chao Zhao","doi":"10.1016/j.pquantelec.2025.100587","DOIUrl":"10.1016/j.pquantelec.2025.100587","url":null,"abstract":"<div><div>The semiconductor industry is increasingly reliant on advances in epitaxial technologies to meet the demands of high-performance applications such as advanced photonics, quantum computing, and power electronics. However, the nonlinear dynamics of crystal epitaxial growth, combined with stochastic interfacial fluctuations, present significant challenges. These challenges create fundamental difficulties between the control of empirical parameters and the stringent material quality requirements, which hinder systematic improvements in material performance. This paper reviews recent progress in Intelligent Epitaxy, a transformative framework that employs an autonomous architecture consisting of sensing, decision-making, and execution. This framework integrates machine learning with precise characterization and control through three core modules: the Multimodal Sensing Module, the Knowledge-Informed Decision Module, and the Adaptive Control Module. Together, these modules enable comprehensive monitoring of growth dynamics, causal analysis of the relationships between parameters, growth states, and outcomes, as well as the autonomous regulation of growth processes. Additionally, we discuss and address current challenges and issues in this field, providing insights and perspectives for future research. Our review aims to guide the development of a new technological trajectory that goes beyond traditional approaches, positioning intelligent epitaxy as the foundation for next-generation autonomous semiconductor manufacturing.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100587"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145218163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum nanophotonics with energetic particles: X-rays and free electrons","authors":"Xihang Shi ,&nbsp;Wen Wei Lee ,&nbsp;Aviv Karnieli ,&nbsp;Leon Merten Lohse ,&nbsp;Alexey Gorlach ,&nbsp;Lee Wei Wesley Wong ,&nbsp;Tim Salditt ,&nbsp;Shanhui Fan ,&nbsp;Ido Kaminer ,&nbsp;Liang Jie Wong","doi":"10.1016/j.pquantelec.2025.100577","DOIUrl":"10.1016/j.pquantelec.2025.100577","url":null,"abstract":"<div><div>Rapid progress in precision nanoscale and atomic-scale design over the past decades has driven transformative advances in controlling the generation and propagation of light, giving rise to the field of nanophotonics. While nanophotonics has traditionally focused on manipulating electromagnetic waves across the microwave to visible spectrum, recent developments have extended its impact into ultrashort-wavelength regimes, including X-rays and free-electron wavepackets. In this review, we highlight the impact and potential of nanophotonics in this relatively unexplored yet technologically disruptive domain, demonstrating how nanoscale and atomic-scale design enable unprecedented technologies in quantum science related to X-rays and free electrons. We place particular emphasis on quantum phenomena arising from electron–photon entanglement in free-electron radiation, including quantum recoil effects, enhancing and controlling X-ray generation through free-electron waveshaping, and the potential for quantum light generation driven by free electrons. The nanoscale control of material structures and light enables manipulation of free-electron-driven X-rays and electron wavepackets at the wavelength scale, revealing quantum features and offering potential pathways for developing novel, compact light and electron sources. We also review high-harmonic generation (HHG), which arises from quasi-free electrons, as a source of extreme ultraviolet and X-rays, including nano-optics-enhanced and quantum light-driven HHG. The review then explores X-ray waveguide nanophotonics, covering waveguide fundamentals, fabrication, mode structures, and applications in coherent imaging and emitter interactions. Finally, we highlight emerging applications of nanophotonics-enabled X-rays and free electrons, including quantum X-ray imaging, X-ray detection, and quantum information technologies, where free electrons are explored as quantum probes, information carriers, and quantum light sources. Our review underscores the unique opportunities within the X-ray and free-electron regimes and the enormous potential of quantum nanophotonics to revolutionize these fields through tailored interactions between photons, free electrons, and nanomaterials.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100577"},"PeriodicalIF":12.5,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144766742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum emitters based on hexagonal boron nitride for next-generation quantum technology","authors":"Semi Im ,&nbsp;Seokho Moon ,&nbsp;Jawon Kim,&nbsp;Jaesub Song,&nbsp;Changuk Ji,&nbsp;Seonghyeon Pak,&nbsp;Jong Kyu Kim","doi":"10.1016/j.pquantelec.2025.100576","DOIUrl":"10.1016/j.pquantelec.2025.100576","url":null,"abstract":"<div><div>Hexagonal boron nitride (h-BN), a wide-bandgap layered van der Waals material, has garnered significant attention due to its exceptional properties, making it a highly versatile material in various applications. In particular, recent studies have demonstrated that h-BN hosts stable quantum emitters over a broad spectral range at room temperature, positioning it as a compelling candidate for next generation quantum technology platforms. In this review, we present a comprehensive analysis of optically active defects in h-BN, focusing on their structural and optical properties. In addition, we discuss various defect generation methods and excitation techniques aimed at achieving efficient quantum emission. Furthermore, we highlight advances in integrating h-BN quantum emitters into device architectures, emphasizing their compatibility with photonic circuits and scalable quantum systems. The progress, challenges, and future outlook of h-BN-based quantum emitters as a transformative platform for next-generation quantum technologies are discussed.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100576"},"PeriodicalIF":7.4,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144290017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors","authors":"Ho-Young Kim ,&nbsp;Ray-Hua Horng ,&nbsp;Hiroshi Amano ,&nbsp;Tae-Yeon Seong","doi":"10.1016/j.pquantelec.2025.100578","DOIUrl":"10.1016/j.pquantelec.2025.100578","url":null,"abstract":"<div><div>AlGaN/GaN-based high electron mobility transistors (HEMTs) hold significant technological importance due to their applications in power electronics, radio frequency (RF) amplifiers, and microwave communication systems. A critical factor affecting the performance of AlGaN/GaN HEMTs is the formation of high-quality ohmic contacts to the source and drain, which facilitates efficient carrier injection from metal electrodes to the semiconductor. Therefore, various approaches have been employed to achieve the formation of high-quality ohmic contacts. This review presents recent advancements in ohmic contact technology for AlGaN/GaN HEMTs. Specifically, we introduce and discuss contact technologies focusing on multilayer schemes under different annealing conditions, Au-free metallization schemes, surface treatments, non-traditional annealing processes, recess etching, selective area regrowth, and ion implantation.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100578"},"PeriodicalIF":7.4,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144271593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progresses on InGaN red micro-LEDs for display","authors":"Anda Cheng ,&nbsp;Zhibiao Hao ,&nbsp;Changzheng Sun ,&nbsp;Bing Xiong ,&nbsp;Yanjun Han ,&nbsp;Jian Wang ,&nbsp;Hongtao Li ,&nbsp;Lin Gan ,&nbsp;Yi Luo ,&nbsp;Lai Wang","doi":"10.1016/j.pquantelec.2025.100575","DOIUrl":"10.1016/j.pquantelec.2025.100575","url":null,"abstract":"<div><div>Micro-scale light-emitting diodes (micro-LEDs), with their high brightness, high resolution, and low power consumption, are emerging as a promising candidate for the next-generation display. Among them, InGaN red micro-LEDs, as a crucial component of full-color micro-displays, have attracted significant attention for their smaller size effect, higher thermal stability, and compatibility with blue and green micro-LED fabrication processes and so on, when compared to AlGaInP red micro-LEDs. However, for next-generation display technologies such as augmented reality (AR), InGaN red micro-LEDs still fall short of meeting the requirements. Specifically, the efficiency of InGaN red micro-LEDs with the ultra-small size needed for AR applications is still very low, necessitating a high working current density. Unfortunately, a high current density leads to a significant blueshift in the emission wavelength, which results in color deviation, failing to meet the requirements for red display devices. This review has introduced two approaches to address the aforementioned issues, namely enhancing the efficiency of InGaN red micro-LEDs or suppressing the blueshift, and has listed the performances of recent typical InGaN red micro-LEDs. Finally, the potential of InGaN red micro-LEDs in the full-color monolithic displays has been discussed.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100575"},"PeriodicalIF":7.4,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144271592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “Quantum non-Gaussianity of light and atoms” [Progress Quant. Electron. 83 (2022) 100395]","authors":"Lukáš Lachman,&nbsp;Radim Filip","doi":"10.1016/j.pquantelec.2025.100561","DOIUrl":"10.1016/j.pquantelec.2025.100561","url":null,"abstract":"","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100561"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144189836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin excitations and dynamics in 2D magnets: An overview of magnons and magnetic skyrmions","authors":"Yingying Wu ,&nbsp;Luis Balicas ,&nbsp;Ran Cheng ,&nbsp;Xiao-Xiao Zhang","doi":"10.1016/j.pquantelec.2025.100564","DOIUrl":"10.1016/j.pquantelec.2025.100564","url":null,"abstract":"<div><div>van der Waals magnetic materials open up exciting possibilities to investigate fundamental spin properties in low-dimensional systems and to build compact functional spintronic structures. This review focuses on the recent progress in two-dimensional(2D) magnets that explore beyond the homogenous magnetically-ordered state, including magnons (spin waves), magnetic skyrmions, and complex magnetic domains. Properties of these spin and topology excitations in 2D magnets provide insights into spin-orbit interactions and other forms of coupling between electrons, phonons, and spin-dependent excitations. Such spin-based quasiparticles can also serve as information carriers for next-generation high-speed computing elements. We will first lay out the general theoretical basis of dynamical responses in magnetic systems, followed by detailed descriptions of experimental progress in magnons and spin textures (including magnetic domains and skyrmions). Discussion on the experimental techniques and future perspectives are also included.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"100 ","pages":"Article 100564"},"PeriodicalIF":7.4,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143843903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}