Quantum emitters based on hexagonal boron nitride for next-generation quantum technology

Abstract

Hexagonal boron nitride (h-BN), a wide-bandgap layered van der Waals material, has garnered significant attention due to its exceptional properties, making it a highly versatile material in various applications. In particular, recent studies have demonstrated that h-BN hosts stable quantum emitters over a broad spectral range at room temperature, positioning it as a compelling candidate for next generation quantum technology platforms. In this review, we present a comprehensive analysis of optically active defects in h-BN, focusing on their structural and optical properties. In addition, we discuss various defect generation methods and excitation techniques aimed at achieving efficient quantum emission. Furthermore, we highlight advances in integrating h-BN quantum emitters into device architectures, emphasizing their compatibility with photonic circuits and scalable quantum systems. The progress, challenges, and future outlook of h-BN-based quantum emitters as a transformative platform for next-generation quantum technologies are discussed.