Progress in Quantum Electronics最新文献_第2页

Advanced deep learning approaches in metasurface modeling and design: A review 元表面建模与设计中的高级深度学习方法综述

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2025-01-01 DOI: 10.1016/j.pquantelec.2025.100554

Yunxi Dong , Sensong An , Haoyue Jiang , Bowen Zheng , Hong Tang , Yi Huang , Huan Zhao , Hualiang Zhang

引用次数: 0

Magneto-electric phenomena in atoms and molecules 原子和分子中的磁电现象

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2025-01-01 DOI: 10.1016/j.pquantelec.2024.100544

Gregory Smail, Stephen C. Rand

{"title":"Magneto-electric phenomena in atoms and molecules","authors":"Gregory Smail, Stephen C. Rand","doi":"10.1016/j.pquantelec.2024.100544","DOIUrl":"10.1016/j.pquantelec.2024.100544","url":null,"abstract":"<div><div>Traditional nonlinear optics emphasizes processes driven by the electric field of light at moderately high intensities while generally ignoring dynamic magnetic effects. High frequency magnetism is generally associated with metamaterials or bulk magneto-electric solids. However, magneto-electric interactions can achieve magnetic response at the molecular level in essentially all dielectric materials. Classical and quantum models of nonlinear interactions driven by the combined forces of optical electric and magnetic fields are reviewed in this paper. Experimental conditions are also identified under which electric and magnetic field-driven interactions induce enhanced magnetic dipole response as well as a longitudinal Hall effect. Several mechanisms that account for dynamic enhancement of magnetic response are identified, including a torque-driven exchange of orbital angular momentum for rotational angular momentum. Experiments on this topic are summarized, and connections are established between electric and magneto-electric susceptibilities. The review concludes by anticipating novel photonic technology reliant on dynamic magneto-electric effects.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"99 ","pages":"Article 100544"},"PeriodicalIF":7.4,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142867543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The road to quantum internet: Progress in quantum network testbeds and major demonstrations 通往量子互联网之路：量子网络试验台的进展和重大示范

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2025-01-01 DOI: 10.1016/j.pquantelec.2024.100551

Jianqing Liu , Thinh Le , Tingxiang Ji , Ruozhou Yu , Demitry Farfurnik , Greg Byrd , Daniel Stancil

引用次数: 0

III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration 用于异质集成的 III 族氮化物半导体膜电子学和光电子学

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-11-01 DOI: 10.1016/j.pquantelec.2024.100536

Renfeng Chen , Yijian Song , Rui He , Junxi Wang , Jinmin Li , Tongbo Wei

{"title":"III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration","authors":"Renfeng Chen , Yijian Song , Rui He , Junxi Wang , Jinmin Li , Tongbo Wei","doi":"10.1016/j.pquantelec.2024.100536","DOIUrl":"10.1016/j.pquantelec.2024.100536","url":null,"abstract":"<div><div>The rapidly developing III-nitrides materials and devices technologies are driving the advancements in hybrid heterogeneous structures for multi-material and multifunctional electronic or optoelectronic integrated systems. Beyond heteroepitaxial growth, the process integrations of freestanding thin-film devices open up more possibilities for high levels of integration and multi-functionalization applications, overcoming the limitations of epitaxial substrate materials. Benefiting from the abundant and exceptional electrical and photoelectrical properties of III-nitrides, the heterogeneous integration of thin-film devices significantly enhances the functional capabilities in the fields of on-chip optical communication, micro-LED display, and flexible sensing. In this review, we present a comprehensive overview of freestanding thin-film device fabrication technology and its integration strategies. We discuss the characteristics of both conventional and advanced III-nitride epilayer transfer technologies, focusing on lift-off, transfer, bonding, and integration process. Promising applications are summarized based on the integration technology of transferable III-nitride thin-film devices. Additionally, we analyze the remaining challenges in manufacturing and application of III-nitride thin-film devices for advanced heterogeneous integrations. The further development of these technologies will promote the research of III-nitrides in pioneering fields, including high-speed photoelectric integrated communication system, cost-effective Micro-LED display and reliable biosensing applications.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"98 ","pages":"Article 100536"},"PeriodicalIF":7.4,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142643102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Elemental segregation and dimensional separation in halide perovskite light-emitting diodes 卤化物过氧化物发光二极管中的元素偏析和尺寸分离

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-11-01 DOI: 10.1016/j.pquantelec.2024.100537

Seok Joo Yang , Yoon Ho Lee , Kagachi Tateno , Letian Dou

{"title":"Elemental segregation and dimensional separation in halide perovskite light-emitting diodes","authors":"Seok Joo Yang , Yoon Ho Lee , Kagachi Tateno , Letian Dou","doi":"10.1016/j.pquantelec.2024.100537","DOIUrl":"10.1016/j.pquantelec.2024.100537","url":null,"abstract":"<div><div>Compositional engineering is a promising avenue for enhancing external quantum efficiency and adjusting emission wavelengths in halide perovskite light-emitting diodes (PeLEDs). However, the occurrence of ion migration within these materials poses a notable challenge as it can lead to elemental segregation during crystallization or under external stimuli such as heat, light, and bias, especially when simple mixing and alloying are employed. Such non-uniform distribution of elements detrimentally impacts color purity and long-term device stability in PeLEDs, highlighting the need to address elemental segregation issues. Additionally, quasi-2D perovskites have garnered attention for their potential to mitigate ion migration while maintaining superior optoelectronic properties attributable to the quantum confinement effect. Nevertheless, precise control over dimensionality remains challenging due to the thermodynamically favored 2D/3D phase separation, hindering efficient energy transfer. This review aims to provide an in-depth analysis of these phenomena. It explores the underlying mechanisms of elemental segregation and dimensionality separation, while summarizing recent efforts to overcome these challenges. Furthermore, the review discusses ongoing obstacles and suggests potential directions for future research in this evolving field.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"98 ","pages":"Article 100537"},"PeriodicalIF":7.4,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142643096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Technologies for modulation of visible light and their applications 可见光调制技术及其应用

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-09-01 DOI: 10.1016/j.pquantelec.2024.100534

Sanghyo Park , Milica Notaros , Aseema Mohanty , Donggyu Kim , Jelena Notaros , Sara Mouradian

引用次数: 0

Nonlinear photocurrent in quantum materials for broadband photodetection 用于宽带光探测的量子材料中的非线性光电流

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-09-01 DOI: 10.1016/j.pquantelec.2024.100535

Yulin Shen , Louis Primeau , Jiangxu Li , Tuan-Dung Nguyen , David Mandrus , Yuxuan Cosmi Lin , Yang Zhang

引用次数: 0

Progress and perspectives on weak-value amplification 弱值放大的进展与展望

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-07-01 DOI: 10.1016/j.pquantelec.2024.100518

Liang Xu, Lijian Zhang

{"title":"Progress and perspectives on weak-value amplification","authors":"Liang Xu, Lijian Zhang","doi":"10.1016/j.pquantelec.2024.100518","DOIUrl":"10.1016/j.pquantelec.2024.100518","url":null,"abstract":"<div><p>Weak-value amplification (WVA) is a metrological protocol that effectively amplifies ultra-small physical effects, making it highly applicable in the fields of quantum sensing and metrology. However, the amplification effect is achieved through post-selection, which leads to a significant decrease in signal intensity. Consequently, there is a heated debate regarding the trade-off between the amplification effect and the success probability of post-selection, questioning whether WVA surpasses conventional measurement (CM) in terms of measurement precision. Extensive research indicates that the specific theoretical assumptions and experimental conditions play crucial roles in determining the respective advantages of WVA and CM. WVA provides new perspectives for recognizing the important role of post-selection in precision metrology. It demonstrates significant advantages in two aspects: (i) WVA based on the phase space interaction provides feasible strategies to practically achieve the Heisenberg-scaling precision using only classical resources. (ii) WVA exhibits robustness against certain types of technical noise and imperfections of detectors. Moreover, WVA allows for various modifications to extend the applicable scope and enhance the metrological performance in corresponding situations. Despite substantial progress in recent years, the inherent connection between the advantages of WVA and its unique features remains incompletely understood. In this paper, we systematically review the recent advances in the WVA scheme, with a particular focus on the ultimate precision of WVA under diverse conditions. Our objective is to provide a comprehensive perspective on the benefits of WVA in precision measurement and facilitate the realization of its full potential.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"96 ","pages":"Article 100518"},"PeriodicalIF":7.4,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141411528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum interferometers: Principles and applications 量子干涉仪：原理与应用

IF 7.4 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-07-01 DOI: 10.1016/j.pquantelec.2024.100519

Rui-Bo Jin , Zi-Qi Zeng , Chenglong You , Chenzhi Yuan

{"title":"Quantum interferometers: Principles and applications","authors":"Rui-Bo Jin , Zi-Qi Zeng , Chenglong You , Chenzhi Yuan","doi":"10.1016/j.pquantelec.2024.100519","DOIUrl":"10.1016/j.pquantelec.2024.100519","url":null,"abstract":"<div><p>Interference, which refers to the phenomenon associated with the superposition of waves, has played a crucial role in the advancement of physics and finds a wide range of applications in physical and engineering measurements. Interferometers are experimental setups designed to observe and manipulate interference. With the development of technology, many quantum interferometers have been discovered and have become cornerstone tools in the field of quantum physics. Quantum interferometers not only explore the nature of the quantum world but also have extensive applications in quantum information technology, such as quantum communication, quantum computing, and quantum measurement. In this review, we analyze and summarize three typical quantum interferometers: the Hong–Ou–Mandel (HOM) interferometer, the N00N state interferometer, and the Franson interferometer. We focus on the principles and applications of these three interferometers. In the principles section, we present the theoretical models for these interferometers, including single-mode theory and multi-mode theory. In the applications section, we review the applications of these interferometers in quantum communication, computation, and measurement. We hope that this review article will promote the development of quantum interference in both fundamental science and practical engineering applications.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"96 ","pages":"Article 100519"},"PeriodicalIF":7.4,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141411548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrically injected InGaN microdisk lasers: A review of progress, challenges, and future prospects 电注入式 InGaN 微盘激光器：进展、挑战和未来展望综述

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2024-05-01 DOI: 10.1016/j.pquantelec.2024.100516

Wai Yuen Fu, Hoi Wai Choi

引用次数: 0