Progress in Quantum Electronics最新文献_第3页

Corrigendum to “Crested 2D materials for optoelectronics and photonics” [Prog. Quant. Electron. 86 (2022) 100436] “光电子和光子学用Crested 2D材料”的勘误表[Prog.Quant.Electron.86（2022）100436]

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2023-01-01 DOI: 10.1016/j.pquantelec.2023.100452

Siwei Luo , Gencai Guo , Xiang Qi , Weiyang Liu , Han Tang , Qiaoliang Bao , Jianxin Zhong

引用次数: 0

Edge emitting mode-locked quantum dot lasers 边缘发射锁模量子点激光器

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2023-01-01 DOI: 10.1016/j.pquantelec.2022.100451

Amit Yadav , Nikolai B. Chichkov , Eugene A. Avrutin , Andrei Gorodetsky , Edik U. Rafailov

{"title":"Edge emitting mode-locked quantum dot lasers","authors":"Amit Yadav , Nikolai B. Chichkov , Eugene A. Avrutin , Andrei Gorodetsky , Edik U. Rafailov","doi":"10.1016/j.pquantelec.2022.100451","DOIUrl":"10.1016/j.pquantelec.2022.100451","url":null,"abstract":"<div>Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the generation of picosecond and femtosecond pulses and/or broad frequency combs. They provide direct electrical control and footprints down to few millimeters. Their broad gain bandwidths (up to 50 nm for ground to ground state transitions as discussed below, with potential for increase to more than >200 nm by overlapping ground and excited state band transitions) allow for wavelength-tuning and generation of pico- and femtosecond laser pulses over a broad wavelength range. In the last two decades, mode-locked QD laser have become promising tools for low-power applications in ultrafast photonics. In this article, we review the development and the state-of-the-art of edge-emitting mode-locked QD lasers. We start with a brief introduction on QD active media and their uses in lasers, amplifiers, and saturable absorbers. We further discuss the basic principles of mode-locking in QD lasers, including theory of nonlinear phenomena in QD waveguides, ultrafast carrier dynamics, and mode-locking methods. Different types of mode-locked QD laser systems, such as monolithic one- and two-section devices, external-cavity setups, two-wavelength operation, and master-oscillator power-amplifier systems, are discussed and compared. After presenting the recent trends and results in the field of mode-locked QD lasers, we briefly discuss the application areas.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"87 ","pages":"Article 100451"},"PeriodicalIF":11.7,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0079672722000763/pdfft?md5=c67e6ad02e8893b7e6acdeabca7a33ae&pid=1-s2.0-S0079672722000763-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42986736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Advances in Brillouin dynamic grating in optical fibers and its applications 光纤布里渊动态光栅的研究进展及其应用

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2023-01-01 DOI: 10.1016/j.pquantelec.2022.100440

Hongying Zhang , Yongkang Dong

引用次数: 1

N-polar GaN: Epitaxy, properties, and device applications N极性GaN：外延、性质和器件应用

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2023-01-01 DOI: 10.1016/j.pquantelec.2022.100450

Subhajit Mohanty , Kamruzzaman Khan , Elaheh Ahmadi

{"title":"N-polar GaN: Epitaxy, properties, and device applications","authors":"Subhajit Mohanty , Kamruzzaman Khan , Elaheh Ahmadi","doi":"10.1016/j.pquantelec.2022.100450","DOIUrl":"10.1016/j.pquantelec.2022.100450","url":null,"abstract":"<div>In recent years, Gallium Nitride (GaN) has been established as a material of choice for high power switching, high power RF and lighting applications. In c-direction, depending on the surface termination III-nitrides have either a group III element (Al, In, Ga) polarity or a N-polarity. Currently, commercially available GaN-based electronic and optoelectronic devices are fabricated predominantly on Ga-polar GaN. However, N-polar nitride heterostructures due its intrinsic material properties, including opposite polarization field and more chemically reactive surface, can provide benefits for these applications. In this article, some of important electronic and optical properties of N-polar (In, Ga, Al)N thin films and heterostructures have been reviewed. Different techniques that have been used for the epitaxial growth of these materials including tri-halide vapor phase epitaxy (THVPE), metalorganic chemical vapor deposition (MOCVD), and plasma-assisted molecular beam epitaxy (PAMBE) have been discussed. Finally, some of important process technologies that have been developed for fabrication of N-polar GaN high electron mobility transistors are presented.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"87 ","pages":"Article 100450"},"PeriodicalIF":11.7,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47434973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Crested 2D materials for optoelectronics and photonics 光电子学和光子学的冠状二维材料

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2022-09-01 DOI: 10.1016/j.pquantelec.2022.100436

Siwei Luo , Gencai Guo , Xiang Qi , Weiyang Liu , Han Tang , Qiaoliang Bao , Jianxin Zhong

{"title":"Crested 2D materials for optoelectronics and photonics","authors":"Siwei Luo , Gencai Guo , Xiang Qi , Weiyang Liu , Han Tang , Qiaoliang Bao , Jianxin Zhong","doi":"10.1016/j.pquantelec.2022.100436","DOIUrl":"10.1016/j.pquantelec.2022.100436","url":null,"abstract":"<div>To manipulate the electrical and optical properties of ultrathin two-dimensional (2D) layered materials, many approaches including the engineering of strain, doping, defects, and chemical absorption have been developed in recent years. However, the researches on crested substrates, which cause strains and emerging functionalities from the rigid substrate are limited. It shows great potential in improving carrier mobility, promoting charge transfer and charge injection, and decreasing the contact resistance of 2D material devices. Here, recent advances on crested substrates in 2D material-based optoelectronic and photonic devices are reviewed. These developments are classified in three aspects: the generation of crested structure in 2D materials; the strain-induced effect and more effects (plasmonic resonance, charge transfer, hot electron injection, optical effect) due to the crested surface; the state-of-the-art of the performance enhancement in 2D materials optoelectronics and photonics. We also present our perspectives on the physics and potential applications based on the crested structures.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"86 ","pages":"Article 100436"},"PeriodicalIF":11.7,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45418097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Recent advances of eco-friendly quantum dots light-emitting diodes for display 显示用环保量子点发光二极管的最新进展

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2022-09-01 DOI: 10.1016/j.pquantelec.2022.100415

Gaoyu Liu, Shuai Zhang, Lili Xu, Yang Hu, Xiaoming Li, Shengli Zhang, Haibo Zeng

{"title":"Recent advances of eco-friendly quantum dots light-emitting diodes for display","authors":"Gaoyu Liu, Shuai Zhang, Lili Xu, Yang Hu, Xiaoming Li, Shengli Zhang, Haibo Zeng","doi":"10.1016/j.pquantelec.2022.100415","DOIUrl":"10.1016/j.pquantelec.2022.100415","url":null,"abstract":"<div>The outstanding properties of wide and flexibly tunable emission range, high color saturation, and cost-effectiveness make quantum dots (QDs) promising candidates in display field. However, the vast majority of QDs used in high-performance display devices contain toxic elements such as cadmium (Cd) or lead (Pb). In recent years, with increasing attention to physical health and ecological environment, the application of eco-friendly QDs in light-emitting diodes (LEDs) has been vigorously explored through tremendous efforts in material engineering and device architecture. The external quantum efficiency (EQE) of red InP-based and blue ZnSe-based quantum dot light-emitting diode (QLED) has exceeded 21.4% and 20.2%, which owns good stability and high color purity. In this review, the recent research progress of three major projects implemented on four types of eco-friendly QDs, including existing challenges and possible solutions, and their feedback on device performance are summarized, aiming to provide guidance for the further development of eco-friendly QLEDs.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"86 ","pages":"Article 100415"},"PeriodicalIF":11.7,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48929321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Defect engineering of metal halide perovskite optoelectronic devices 金属卤化物钙钛矿光电器件缺陷工程

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2022-09-01 DOI: 10.1016/j.pquantelec.2022.100438

Xuanyu Zhang , Xiongbin Wang , Huan Liu , Rui Chen

{"title":"Defect engineering of metal halide perovskite optoelectronic devices","authors":"Xuanyu Zhang , Xiongbin Wang , Huan Liu , Rui Chen","doi":"10.1016/j.pquantelec.2022.100438","DOIUrl":"10.1016/j.pquantelec.2022.100438","url":null,"abstract":"<div>Recently, thanks to their unique and attractive properties, such as tunable bandgap, high absorption coefficient, and long charge carrier diffusion length, metal halide perovskites have been recognized as one of the emerging candidates for next-generation optoelectronic devices. Optoelectronic devices based on perovskites have achieved significant breakthroughs in a relatively short period of time. However, their commercialization still faces various challenges, including stability, scalability, and reproducibility. Defects are often the culprits behind these problems, either inside the perovskites or at the device interfaces. Therefore, rational utilization of defect engineering to minimize the effect of defects on device performance and control of carrier behavior is the key to achieve efficient and stable perovskite-based optoelectronic devices (PODs). Given the important contribution to the rapid development of PODs, there is an urgent need to systematically investigate and summarize recent research advances in defect engineering. Therefore, in this review, defect physics in PODs are described in detail, the role and importance of defects in various PODs are highlighted, and various strategies for optimizing PODs are reviewed. Finally, based on the latest progresses and breakthroughs, the challenges facing in the future development of metal halide perovskites and their potential significance in the field of the optoelectronic are prospected.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"86 ","pages":"Article 100438"},"PeriodicalIF":11.7,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45666855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Progress of magneto-optical ceramics 磁光陶瓷的研究进展

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2022-09-01 DOI: 10.1016/j.pquantelec.2022.100416

A. Ikesue , Y.L. Aung , J. Wang

{"title":"Progress of magneto-optical ceramics","authors":"A. Ikesue , Y.L. Aung , J. Wang","doi":"10.1016/j.pquantelec.2022.100416","DOIUrl":"10.1016/j.pquantelec.2022.100416","url":null,"abstract":"<div>The magneto-optical effect (Faraday effect) was discovered in the middle of the 19th century. In the latter half of the 20th century, the practical use of isolators using single crystals (Faraday rotators) using the melt growth method began. One century after Faraday's discovery of the magneto-optic effect, R.L. Coble proved translucency of polycrystalline ceramics. Ceramics may have many scattering sources due to their polycrystalline microstructure, and even from the viewpoint of scattering theory, it was considered impossible to apply them to the generation of coherent light (laser). However, 40 years later, A. Ikesue demonstrated laser ceramics for the first time with performance comparable to that of optical single crystal counterparts. The possibility of laser application of polycrystalline ceramics also makes it possible to apply it to Faraday rotators (optical isolators) that utilize coherence light. A magneto-optical single crystal composed of a single crystal orientation was considered to be superior in that it provided excellent optical performance and an accurate Faraday rotation angle. However, polycrystalline ceramics composed of random crystal orientations can not only provide accurate Faraday rotation angle but can also have a higher extinction ratio than single crystal isolators. A ceramic medium with extremely low scattering and extremely low insertion loss, which cannot be achieved with a single crystal material, has been developed. In addition, new materials, which have Verdet constants several times higher than those of main commercial crystal for isolator, have made it possible to reduce the size of isolator devices. However, these materials cannot be synthesized by the conventional melt-growth method. In the 21st century, polycrystalline ceramics are paradigms for Faraday rotating elements, and are about to enter a period of change from single crystals to polycrystalline ceramics.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"86 ","pages":"Article 100416"},"PeriodicalIF":11.7,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49343437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Photonic frequency microcombs based on dissipative Kerr and quadratic cavity solitons 基于耗散Kerr和二次腔孤子的光子频率微梳

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2022-09-01 DOI: 10.1016/j.pquantelec.2022.100437

Mingming Nie, Yijun Xie, Bowen Li, Shu-Wei Huang

引用次数: 2

Deterministic integration of single nanowire devices with on-chip photonics and electronics 单纳米线器件与片上光子学和电子学的确定性集成

IF 11.7 1区物理与天体物理

Progress in Quantum Electronics Pub Date : 2022-08-01 DOI: 10.1016/j.pquantelec.2022.100394

D. Jevtics, B. Guilhabert, A. Hurtado, M.D. Dawson, M.J. Strain

引用次数: 6