基于超宽带隙半导体的光电和微电子器件的最新进展

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics Pub Date : 2022-05-01 DOI:10.1016/j.pquantelec.2022.100397

Jialin Yang , Kewei Liu , Xing Chen , Dezhen Shen

{"title":"基于超宽带隙半导体的光电和微电子器件的最新进展","authors":"Jialin Yang , Kewei Liu , Xing Chen , Dezhen Shen","doi":"10.1016/j.pquantelec.2022.100397","DOIUrl":null,"url":null,"abstract":"<div>Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.</div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":7.4000,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors\",\"authors\":\"Jialin Yang , Kewei Liu , Xing Chen , Dezhen Shen\",\"doi\":\"10.1016/j.pquantelec.2022.100397\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.</div>\",\"PeriodicalId\":414,\"journal\":{\"name\":\"Progress in Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":7.4000,\"publicationDate\":\"2022-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Quantum Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0079672722000234\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Quantum Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0079672722000234","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 27

摘要

由于其新颖的物理特性，半导体已经渗透到现代工业系统的几乎每一个角落。目前，半导体材料及其微电子和光电子器件在民用和军事领域得到了广泛的应用。近年来，氮化镓铝(AlGaN)、氧化镓(Ga2O3)、金刚石等带隙明显大于3.4 eV的超宽带隙(UWBG)半导体因其具有高击穿场、高稳定性和高抗辐射性等优点而受到越来越多的关注。本文综述了近年来在光电子学和微电子学领域有关超宽带半导体的研究进展。此外，还讨论了UWBG半导体面临的挑战和机遇。希望本文的综述能够为进一步的相关研究提供启示和见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga₂O₃), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Progress in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

18.50

自引率

0.00%

发文量

审稿时长

150 days

期刊介绍： Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.