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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics最新文献

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Cryogenic operation of power bipolar transistors 功率双极晶体管的低温工作
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583733
R. Singh, B. J. Baliga
{"title":"Cryogenic operation of power bipolar transistors","authors":"R. Singh, B. J. Baliga","doi":"10.1109/ISPSD.1994.583733","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583733","url":null,"abstract":"The results of detailed measurements, simulations and modeling on 500 V, 4 Amps NPN BJTs are reported in the 300-77 K temperature range. For these devices, as the operating temperature is reduced from 300 to 77 K, the current gain has been found to decrease by more than an order of magnitude; the on-state collector-emitter and base-emitter voltages increase by 40 and 80% respectively; although the collector-base breakdown decreases by about 20%, the collector-emitter breakdown increases by about 20%, and the storage and fall times reduce by 10/spl times/ and 6/spl times/, respectively. Through numerical simulations it is shown that the emitter current crowding is much more severe at 77 K than at 300 K. Using verified analytical models and established optimization techniques, it is shown that a 77 K optimally designed BJT has a lower emitter, base and collector dopings and a larger emitter area than a similarly rated 300 K optimized device.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125541641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Comparative study of integrated current sensors in n-channel IGBTs n通道igbt集成电流传感器的比较研究
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583654
Z. Shen, K. So, T. P. Chow
{"title":"Comparative study of integrated current sensors in n-channel IGBTs","authors":"Z. Shen, K. So, T. P. Chow","doi":"10.1109/ISPSD.1994.583654","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583654","url":null,"abstract":"Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"305 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120982721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A new IGBT with a monolithic over-current protection circuit 一种带有单片过流保护电路的新型IGBT
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583634
Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai
{"title":"A new IGBT with a monolithic over-current protection circuit","authors":"Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai","doi":"10.1109/ISPSD.1994.583634","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583634","url":null,"abstract":"A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116539023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Thin SOI IGBT leakage current and a new device structure for high temperature operation 超薄SOI IGBT漏电流及高温工作的新器件结构
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583804
T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki
{"title":"Thin SOI IGBT leakage current and a new device structure for high temperature operation","authors":"T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki","doi":"10.1109/ISPSD.1994.583804","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583804","url":null,"abstract":"This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131108936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of current limiter for a smart power IC 智能电源集成电路限流器的设计
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583755
G. Calí, G. Palmisano, G. Palumbo
{"title":"Design of current limiter for a smart power IC","authors":"G. Calí, G. Palmisano, G. Palumbo","doi":"10.1109/ISPSD.1994.583755","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583755","url":null,"abstract":"A current limiter is proposed which uses a compensation circuit providing an accurate stability without requiring a large compensation capacitor. Indeed thanks to the use of an enhanced Miller effect an equivalent 4-nF compensation capacitor was achieved while using only a 100-pF capacitor and a low-area single-stage amplifier.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133678607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of LDMOS and LIGBT structures at high temperatures 高温下LDMOS和light结构的建模
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583676
B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin
{"title":"Modeling of LDMOS and LIGBT structures at high temperatures","authors":"B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin","doi":"10.1109/ISPSD.1994.583676","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583676","url":null,"abstract":"Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133061628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design 先进的功率模块采用砷化镓半导体，金属基复合封装材料，低电感设计
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583629
S. Anderson, K. Berringer, G. Romero
{"title":"Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design","authors":"S. Anderson, K. Berringer, G. Romero","doi":"10.1109/ISPSD.1994.583629","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583629","url":null,"abstract":"Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115222770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities 通过外部吸除金属杂质来提高超高压MCT和IGBT器件栅极氧化物的完整性
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583725
E. Herr, H. Baltes, U. Thiemann, T. Stockmeier
{"title":"Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities","authors":"E. Herr, H. Baltes, U. Thiemann, T. Stockmeier","doi":"10.1109/ISPSD.1994.583725","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583725","url":null,"abstract":"We observed that gate oxides of MCT and IGBT devices exhibited lower breakdown field strengths when the devices were fabricated on float-zone (FZ) instead of Czochralski-grown (CZ) silicon starting material. This is because of the different precipitation behavior of heavy metal contaminants. Using neutron activation analysis (NAA), we determined Fe and Ni concentration levels that weaken the gate oxides of BiMOS devices on FZ silicon. We compared the effect of various external gettering techniques on the gate oxide integrity. External gettering by polysilicon layers and by argon implantation damage were employed on the wafer back to improve the gate oxide integrity of BiMOS devices fabricated on FZ material.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"319 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114567246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Intelligent power modules for driving systems [IGBTs] 驱动系统的智能电源模块
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583660
K. Reinmuth, H. Stut, L. Lorenz, S. Konrad
{"title":"Intelligent power modules for driving systems [IGBTs]","authors":"K. Reinmuth, H. Stut, L. Lorenz, S. Konrad","doi":"10.1109/ISPSD.1994.583660","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583660","url":null,"abstract":"A major challenge for systems engineers is the selection, drive system, optimum operation and implementation of the protection functions of power semiconductor devices. This article describes the Intelligent Power Module (IPM) for driving 3-phase asynchronous machines for the voltage range to 1200 V. Special detailed consideration is given to the continuous protection concept, comprising overvoltage, overload, short circuit, temperature and undervoltage protection, and the drive concept for the relevant frequency range of the IGBTs up to 20 kHz.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126408857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Turn-off analysis of the IGBT used in ZCS mode ZCS模式下IGBT的关断分析
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583662
S. Lefebvre, F. Forest, F. Calmon, J. Chante
{"title":"Turn-off analysis of the IGBT used in ZCS mode","authors":"S. Lefebvre, F. Forest, F. Calmon, J. Chante","doi":"10.1109/ISPSD.1994.583662","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.583662","url":null,"abstract":"This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121321583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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