先进的功率模块采用砷化镓半导体，金属基复合封装材料，低电感设计

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583629

S. Anderson, K. Berringer, G. Romero

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引用次数: 3

摘要

采用硅基半导体的大功率应用的功率模块仅限于低频工作，并且具有一些固有的可靠性限制。一个400安培600伏的电源模块已经设计使用新技术来克服这些限制。基于砷化镓的半导体提供高效的高频操作。在封装设计中采用了低电感技术，以实现高频工作。碳化硅金属基复合材料用于为砷化镓和硅器件提供可靠的封装和热管理。

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Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design

Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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