Comparative study of integrated current sensors in n-channel IGBTs

Abstract

Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors.