超薄SOI IGBT漏电流及高温工作的新器件结构

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583804

T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki

{"title":"超薄SOI IGBT漏电流及高温工作的新器件结构","authors":"T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki","doi":"10.1109/ISPSD.1994.583804","DOIUrl":null,"url":null,"abstract":"This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Thin SOI IGBT leakage current and a new device structure for high temperature operation\",\"authors\":\"T. Matsudai, Y. Yamaguchi, N. Yasuhara, A. Nakagawa, H. Mochizuki\",\"doi\":\"10.1109/ISPSD.1994.583804\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583804\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583804","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文描述并比较了薄SOI上mosfet(二极管)和light的漏电流和导通电阻的温度依赖性。泄漏电流随着SOI层厚度的减小而有效减小。在高温下，如200/spl℃，薄SOI上igbt的正向压降没有明显恶化。另一方面，随着SOI层厚度的减小，开关速度提高。因此，薄SOI器件是高温操作的良好候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thin SOI IGBT leakage current and a new device structure for high temperature operation

This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

自引率

0.00%

发文量