Modeling of LDMOS and LIGBT structures at high temperatures

Abstract

Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.