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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics最新文献

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High voltage automotive interface design, in a VLSI compatible BiCmos technology 高压汽车接口设计，采用VLSI兼容的BiCmos技术
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI: 10.1109/ISPSD.1994.583757
M. Corsi, F. Fattori
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引用次数: 1
Accurate Simulation Of Combined Electron And Ion Irradiated Silicon Devices For Local Lifetime Tailoring 用于局部寿命定制的电子和离子复合辐照硅器件的精确模拟
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1900-01-01 DOI: 10.1109/ISPSD.1994.584286
J. Vobeckj, P. Hazdra, J. Voves, F. Spurnj
{"title":"Accurate Simulation Of Combined Electron And Ion Irradiated Silicon Devices For Local Lifetime Tailoring","authors":"J. Vobeckj, P. Hazdra, J. Voves, F. Spurnj","doi":"10.1109/ISPSD.1994.584286","DOIUrl":"https://doi.org/10.1109/ISPSD.1994.584286","url":null,"abstract":"Both the ion and electron irradiation of power devices have already become a widely used practice to locally reduce the minority camer lifetime. For efficient and accurate design of irradiation parameters, i.e. ion type, irradiation energy and dose, annealing temperature, etc., the device simulation taking into account the fully characterized deep levels and solving the complete solution of trap-dynamic equations is necessary.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"767 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123281802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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