2010 IEEE Dallas Circuits and Systems Workshop最新文献_第2页

A supply insensitive resistor-less bandgap reference with buffered output 具有缓冲输出的电源不敏感的无电阻带隙基准

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955044

V. Acharya, B. Banerjee

引用次数: 5

Accurate self-characterization of mismatches in a capacitor array of a digitally-controlled oscillator 数字控制振荡器电容阵列失配的精确自表征

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955030

O. Eliezer, B. Staszewski, J. Mehta, F. Jabbar, I. Bashir

引用次数: 18

Automated GmC filter design: A case study in accelerated reuse of analog circuit design 自动化GmC滤波器设计:模拟电路设计加速重用的案例研究

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955045

S. Modi, S. Askari, S. Manohar, P. Balsara, M. Nourani

引用次数: 2

0.6–2.0 V, All-CMOS temperature sensor front-end using bulk-driven technology 0.6-2.0 V，全cmos温度传感器前端采用批量驱动技术

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955038

S. T. Block, Yiran Li, Yi Yang, Changzhi Li

{"title":"0.6–2.0 V, All-CMOS temperature sensor front-end using bulk-driven technology","authors":"S. T. Block, Yiran Li, Yi Yang, Changzhi Li","doi":"10.1109/DCAS.2010.5955038","DOIUrl":"https://doi.org/10.1109/DCAS.2010.5955038","url":null,"abstract":"An All-CMOS temperature sensor front-end is designed to work with a supply voltage range of 0.6 to 2.0 volts, and temperature range from 0 to 120°C. The flexibility of 0.6 to 2.0 volt operation was made possible by the use of a bulk-driven op amp. Using all CMOS allows for low voltage and smaller chip area. UMC 0.13μm technology was used for this design. This sensor produces three outputs, two voltages proportional to absolute temperature (PTAT), and one voltage independent of absolute temperature (IOAT). The temperature sensor front-end produces an approximate average reference voltage of 249mV with variation of ±0.7mV, a temperature coefficient of 18.2ppm/°C at VDD = 0.6V to 19.2ppm/°C at VDD = 2.0V, and a voltage coefficient of 290ppm/V at 0°C to 657ppm/V at 120°C. The design produces two linear PTAT voltages with approximate temperature sensitivity of 0.28mV/°C and 0.84mV/°C (V<inf>temp0</inf> and V<inf>temp1</inf> respectively) and voltage coefficients of 113.6ppm/V at 0°C, 450ppm/V at 120°C for V<inf>temp0</inf> and 501.4ppm/V at 0°C, 1904ppm/V at 120°C for V<inf>temp1</inf>. The design has a simulated PSRR of −54dB at 100Hz and 0°C with a supply voltage of 0.6V.","PeriodicalId":405694,"journal":{"name":"2010 IEEE Dallas Circuits and Systems Workshop","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130547274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Circuit characterization of low frequency noise in 45nm technology bandgap 45纳米技术带隙低频噪声的电路表征

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955043

P. Srinivasan, A. Marshall

引用次数: 3

Low overshoot, low dropout voltage regulator with level detector 低超调，低差电压调节器与电平检测器

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955037

R. Oberhuber, R. Prakash

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引用次数: 4

Performance robustness analysis of VLSI circuits with process variations based on Kharitonov's theorem 基于Kharitonov定理的工艺变化VLSI电路性能鲁棒性分析

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955039

Liuxi Qian, Dian Zhou, Sheng-Guo Wang, Xuan Zeng

引用次数: 2

Device physics origin and solutions to threshold voltage fluctuations in sub 130 nm CMOS incorporating halo implant 包含光环植入的130纳米以下CMOS中阈值电压波动的器件物理起源和解决方案

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI: 10.1109/DCAS.2010.5955031

H. Edwards, T. Chatterjee, M. Kassem, G. Gómez, F. Hou, Xiaoju Wu

引用次数: 2