Circuit characterization of low frequency noise in 45nm technology bandgap

P. Srinivasan, A. Marshall
{"title":"Circuit characterization of low frequency noise in 45nm technology bandgap","authors":"P. Srinivasan, A. Marshall","doi":"10.1109/DCAS.2010.5955043","DOIUrl":null,"url":null,"abstract":"Circuit characterization for low frequency noise of a bandgap reference circuit in a 45nm CMOS process is performed here. It is determined that the noise at lower frequencies follow 1/fγ spectra where 1<γ<2. This flattens off as thermal noise for frequencies greater than 1 KHz. Substantial variation in bandgap noise is observed which is demonstrated to be largely uncorrelated to bandgap trim voltage. Possible noise generating components within the bandgap circuit are identified. The dominant contributor for the observed 1/fγ nature of the bandgap noise is identified as the noise generated within the operational amplifier circuit block.","PeriodicalId":405694,"journal":{"name":"2010 IEEE Dallas Circuits and Systems Workshop","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Dallas Circuits and Systems Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCAS.2010.5955043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Circuit characterization for low frequency noise of a bandgap reference circuit in a 45nm CMOS process is performed here. It is determined that the noise at lower frequencies follow 1/fγ spectra where 1<γ<2. This flattens off as thermal noise for frequencies greater than 1 KHz. Substantial variation in bandgap noise is observed which is demonstrated to be largely uncorrelated to bandgap trim voltage. Possible noise generating components within the bandgap circuit are identified. The dominant contributor for the observed 1/fγ nature of the bandgap noise is identified as the noise generated within the operational amplifier circuit block.
45纳米技术带隙低频噪声的电路表征
本文对45nm CMOS制程带隙参考电路的低频噪声进行了电路表征。确定低频噪声遵循1/fγ谱,其中1<γ<2。当频率大于1khz时,这种热噪声会变平。观察到带隙噪声的实质性变化,这被证明在很大程度上与带隙修整电压无关。识别了带隙电路中可能产生噪声的元件。所观察到的带隙噪声的1/fγ性质的主要贡献者被确定为运算放大器电路块内产生的噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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