包含光环植入的130纳米以下CMOS中阈值电压波动的器件物理起源和解决方案

2010 IEEE Dallas Circuits and Systems Workshop Pub Date : 2010-10-01 DOI:10.1109/DCAS.2010.5955031

H. Edwards, T. Chatterjee, M. Kassem, G. Gómez, F. Hou, Xiaoju Wu

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引用次数: 2

摘要

我们报告了一个器件物理理论和紧凑模型，预测了使用光环植入的CMOS晶体管的阈值电压失配。该模型能够适应不同温度和器件几何形状的CMOS VT不匹配，验证潜在的物理参数。提出并展示了布局和偏置方法，以恢复由于晕植入造成的部分匹配退化。

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Device physics origin and solutions to threshold voltage fluctuations in sub 130 nm CMOS incorporating halo implant

We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. Layout and biasing methods are presented and shown to recover part of the matching degradation due to the halo implant.

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2010 IEEE Dallas Circuits and Systems Workshop

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