0.6-2.0 V,全cmos温度传感器前端采用批量驱动技术

S. T. Block, Yiran Li, Yi Yang, Changzhi Li
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引用次数: 3

摘要

全cmos温度传感器前端的工作电压范围为0.6至2.0伏,温度范围为0至120°C。通过使用体积驱动的运放,可以实现0.6至2.0伏操作的灵活性。使用所有CMOS可以实现低电压和更小的芯片面积。本设计采用UMC 0.13μm工艺。该传感器产生三个输出,两个电压正比于绝对温度(PTAT),和一个电压独立于绝对温度(IOAT)。温度传感器前端产生的近似平均参考电压为249mV(±0.7mV),在VDD = 0.6V时温度系数为18.2ppm/°C,在VDD = 2.0V时温度系数为19.2ppm/°C,在0°C时电压系数为290ppm/V,在120°C时电压系数为657ppm/V。该设计产生两个线性PTAT电压,温度灵敏度分别为0.28mV/°C和0.84mV/°C(分别为Vtemp0和Vtemp1),电压系数为0°C时113.6ppm/V, 120°C时Vtemp0为450ppm/V, 0°C时501.4ppm/V, 120°C时Vtemp1为1904ppm/V。该设计在100Hz和0°C下的模拟PSRR为- 54dB,电源电压为0.6V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
0.6–2.0 V, All-CMOS temperature sensor front-end using bulk-driven technology
An All-CMOS temperature sensor front-end is designed to work with a supply voltage range of 0.6 to 2.0 volts, and temperature range from 0 to 120°C. The flexibility of 0.6 to 2.0 volt operation was made possible by the use of a bulk-driven op amp. Using all CMOS allows for low voltage and smaller chip area. UMC 0.13μm technology was used for this design. This sensor produces three outputs, two voltages proportional to absolute temperature (PTAT), and one voltage independent of absolute temperature (IOAT). The temperature sensor front-end produces an approximate average reference voltage of 249mV with variation of ±0.7mV, a temperature coefficient of 18.2ppm/°C at VDD = 0.6V to 19.2ppm/°C at VDD = 2.0V, and a voltage coefficient of 290ppm/V at 0°C to 657ppm/V at 120°C. The design produces two linear PTAT voltages with approximate temperature sensitivity of 0.28mV/°C and 0.84mV/°C (Vtemp0 and Vtemp1 respectively) and voltage coefficients of 113.6ppm/V at 0°C, 450ppm/V at 120°C for Vtemp0 and 501.4ppm/V at 0°C, 1904ppm/V at 120°C for Vtemp1. The design has a simulated PSRR of −54dB at 100Hz and 0°C with a supply voltage of 0.6V.
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