基于Kharitonov定理的工艺变化VLSI电路性能鲁棒性分析

Liuxi Qian, Dian Zhou, Sheng-Guo Wang, Xuan Zeng
{"title":"基于Kharitonov定理的工艺变化VLSI电路性能鲁棒性分析","authors":"Liuxi Qian, Dian Zhou, Sheng-Guo Wang, Xuan Zeng","doi":"10.1109/DCAS.2010.5955039","DOIUrl":null,"url":null,"abstract":"In today's VLSI technology, the process variations are unavoidable. This paper proposes an efficient analysis approach for exploring the worst case performance for VLSI circuits with severe parameter value variations due to nano-scale process. Inspired by Kharitonov's theorem, the described method dramatically reduces the computational burden to only evaluate several critical Kharitonov-type interval transfer functions. The computational efficiency of the method is demonstrated by two practical VLSI circuits.","PeriodicalId":405694,"journal":{"name":"2010 IEEE Dallas Circuits and Systems Workshop","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Performance robustness analysis of VLSI circuits with process variations based on Kharitonov's theorem\",\"authors\":\"Liuxi Qian, Dian Zhou, Sheng-Guo Wang, Xuan Zeng\",\"doi\":\"10.1109/DCAS.2010.5955039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In today's VLSI technology, the process variations are unavoidable. This paper proposes an efficient analysis approach for exploring the worst case performance for VLSI circuits with severe parameter value variations due to nano-scale process. Inspired by Kharitonov's theorem, the described method dramatically reduces the computational burden to only evaluate several critical Kharitonov-type interval transfer functions. The computational efficiency of the method is demonstrated by two practical VLSI circuits.\",\"PeriodicalId\":405694,\"journal\":{\"name\":\"2010 IEEE Dallas Circuits and Systems Workshop\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Dallas Circuits and Systems Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DCAS.2010.5955039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Dallas Circuits and Systems Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCAS.2010.5955039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在今天的VLSI技术中,工艺变化是不可避免的。本文提出了一种有效的分析方法,用于探索由于纳米尺度工艺而导致参数值剧烈变化的VLSI电路的最坏情况性能。该方法受Kharitonov定理的启发,极大地减少了仅求几个临界Kharitonov型区间传递函数的计算量。通过两个实际的VLSI电路验证了该方法的计算效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance robustness analysis of VLSI circuits with process variations based on Kharitonov's theorem
In today's VLSI technology, the process variations are unavoidable. This paper proposes an efficient analysis approach for exploring the worst case performance for VLSI circuits with severe parameter value variations due to nano-scale process. Inspired by Kharitonov's theorem, the described method dramatically reduces the computational burden to only evaluate several critical Kharitonov-type interval transfer functions. The computational efficiency of the method is demonstrated by two practical VLSI circuits.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信