Device physics origin and solutions to threshold voltage fluctuations in sub 130 nm CMOS incorporating halo implant

Abstract

We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. Layout and biasing methods are presented and shown to recover part of the matching degradation due to the halo implant.