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CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2022-10-24 DOI: 10.23919/acc.1992.4792001
{"title":"Copyright page","authors":"","doi":"10.23919/acc.1992.4792001","DOIUrl":"https://doi.org/10.23919/acc.1992.4792001","url":null,"abstract":"","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125606076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Front and back cover 前后封面
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2018-07-01 DOI: 10.1109/cc.2018.8424575
Benjamin Y. Hayden
{"title":"Front and back cover","authors":"Benjamin Y. Hayden","doi":"10.1109/cc.2018.8424575","DOIUrl":"https://doi.org/10.1109/cc.2018.8424575","url":null,"abstract":"","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134109103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural investigation of P3HT-PCBM-graphene films p3ht - pcbm -石墨烯薄膜的结构研究
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095711
L. Veca, R. Gavrila, E. Vasile, M. Purica, M. Danila
{"title":"Structural investigation of P3HT-PCBM-graphene films","authors":"L. Veca, R. Gavrila, E. Vasile, M. Purica, M. Danila","doi":"10.1109/SMICND.2011.6095711","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095711","url":null,"abstract":"Graphene nanosheets (GN) have been synthesized by solution phase exfoliation of graphite in organic solvents. Subsequently, low concentration of GN (2 wt%) uniformly distributed within the P3HT and P3HT-PCBM photo active layers are shown to enhance the crystallinity of the conjugated polymer.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121046657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Soft patterning methods for manufacturing of micro and nano-optical components 微纳米光学元件制造的软图像化方法
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095720
P. Obreja, D. Cristea, A. Dinescu, C. Parvulescu
{"title":"Soft patterning methods for manufacturing of micro and nano-optical components","authors":"P. Obreja, D. Cristea, A. Dinescu, C. Parvulescu","doi":"10.1109/SMICND.2011.6095720","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095720","url":null,"abstract":"The paper presents the experimental results obtained in manufacturing of micro and nano-optical components using electron beam lithography (EBL) in a mono or multi-layer resist, lift-off and the soft lithographic techniques to transfer high-resolution patterns into other materials. The pattern from the master fabricated by EBL was transferred onto an elastomeric stamp and subsequent from the stamp onto the surface of other substrate by molding or by soft UV-nanoimprint. Optical components with different aspects and feature size, like micro-lenses, diffractive optical elements and optical waveguides have been obtained and characterized.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127176887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and optimization of a 250nm SOI LDMOSFET 250nm SOI LDMOSFET的设计与优化
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095802
G. Camuso, F. Udrea, E. Napoli, X. Luo
{"title":"Design and optimization of a 250nm SOI LDMOSFET","authors":"G. Camuso, F. Udrea, E. Napoli, X. Luo","doi":"10.1109/SMICND.2011.6095802","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095802","url":null,"abstract":"This work is aimed at optimising the static performance of a high voltage SOI LDMOSFET. Starting with a conventional LDMOSFET, 2D and 3D numerical simulation models, able to accurately match datasheet values, have been developed. Moving from the original device, several design techniques have been investigated with the target of improving the breakdown voltage and the ON-state resistance. The considered design techniques are based on the modification of the doping profile of the drift region and the Superjunction design technique. The paper shows that a single step doping within the drift region is the best design choice for the considered device and is found to give a 24% improvement in the breakdown voltage and a 17% reduction of the ON-state resistance.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122689060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ZnSe films prepared by the close-spaced sublimation and their influence on ZnSe/CdTe solar cell performance 近间隔升华法制备ZnSe薄膜及其对ZnSe/CdTe太阳能电池性能的影响
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095844
N. Spalatu, D. Serban, T. Potlog
{"title":"ZnSe films prepared by the close-spaced sublimation and their influence on ZnSe/CdTe solar cell performance","authors":"N. Spalatu, D. Serban, T. Potlog","doi":"10.1109/SMICND.2011.6095844","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095844","url":null,"abstract":"This paper focuses on physical properties of ZnSe thin films and photovoltaic parameters of ZnSe/CdTe thin film solar cells. X-ray analysis and SEM images show that ZnSe films are polycrystalline and exhibit wurtzite-zinc-blende structure. ZnSe/CdTe solar cells show an efficiency of about 4.7%. The external quantum efficiency (EQE) for these cells shows that the shape of these characteristics depends on ZnSe layer thickness. The incorporation of Zn at the ZnSe and CdTe interface, for the first time, doubles the short circuit current density and improves the performance of ZnSe/CdTe thin film solar cells.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114494498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors 4H-SiC MESFET晶体管台面隔离与p+注入隔离的比较
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095803
M. Alexandru, V. Banu, M. Vellvehí, P. Godignon, J. Millán
{"title":"Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors","authors":"M. Alexandru, V. Banu, M. Vellvehí, P. Godignon, J. Millán","doi":"10.1109/SMICND.2011.6095803","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095803","url":null,"abstract":"Silicon Carbide (SiC) is considered the wide band gap semiconductor material that can presently compete with silicon (Si) material for power switching devices. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature and/or in harsh environments. An increasing demand for high temperature compliant circuits comes from intelligent power management, automotive industry, and intelligent sensors for harsh environment, space and aerospace as well. Mesa isolation is a widely used isolation technique for the definition of individual devices due to its simplicity as fabrication process [1]. It is mostly used for the protection of high power devices. The junction isolation is widely used for bipolar, Bi-CMOS integrated circuits (IC) and can be achieved by diffusion or implantation process. The present work is presenting the experimental comparison between the mesa isolation process and p+ implantation junction isolation for 4H-SiC MESFET transistors.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"1993 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Microchannel-pinhole parameters investigation for cells visualization in holographic microscopy 微通道-针孔参数在全息显微镜细胞显像中的研究
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095718
M. Mihailescu, E. Scarlat, M. Kusko
{"title":"Microchannel-pinhole parameters investigation for cells visualization in holographic microscopy","authors":"M. Mihailescu, E. Scarlat, M. Kusko","doi":"10.1109/SMICND.2011.6095718","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095718","url":null,"abstract":"Here we propose a compact system built around a microchannel aiming to analyze individual blood cells (BCs), using digital in-line holographic microscopy (DIHM). Under the constraints of achieving maximum resolution for BC images, the study is focused on analytical investigations of the main elements constructive dimensions and the distances between them. In the simulations, we used models of oblate spheroids for BC shapes. The iso-intensity curves in the diffraction pattern of the BCs which flow in the microchannel at different distances are studied and the technically possible dimensions were selected to record the signal from one BC.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124545398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy consumption optimization in nonvolatile silicon nanocrystal memories 非易失性硅纳米晶存储器的能耗优化
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095810
V. D. Marca, J. Amouroux, J. Delalleau, L. Lopez, J. Ogier, J. Postel-Pellerin, F. Lalande, G. Molas
{"title":"Energy consumption optimization in nonvolatile silicon nanocrystal memories","authors":"V. D. Marca, J. Amouroux, J. Delalleau, L. Lopez, J. Ogier, J. Postel-Pellerin, F. Lalande, G. Molas","doi":"10.1109/SMICND.2011.6095810","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095810","url":null,"abstract":"In this paper we investigate the energy consumption of Discrete-Trap Silicon Nanocrystal (Si-nc) Nonvolatile Memory Cell during Channel Hot Electron programming operation. We compare this cell with a Floating Gate Flash in order to evaluate the current absorption and the energy consumption under different conditions. Using a commercial TCAD simulator, a good agreement between data and simulations is obtained and the involved mechanisms are analysed. Then we propose a solution to optimize the programming window and energy consumption trade-off for Si-nc Flash Cells.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129475130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Non-ideal behavior of a comparator-based relaxation oscillator 基于比较器的弛豫振荡器的非理想特性
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095818
M. Pistol, M. Mocanu, R. Ghinea, L. Goras
{"title":"Non-ideal behavior of a comparator-based relaxation oscillator","authors":"M. Pistol, M. Mocanu, R. Ghinea, L. Goras","doi":"10.1109/SMICND.2011.6095818","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095818","url":null,"abstract":"The non-ideal behaviour of a classical comparator-based first-order relaxation oscillator is analysed. The influences of the comparator slew-rate and output resistance as well as the parasitic resistances of the reactive element are considered. Numerical simulations at system level and transistor level are given.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129294477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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