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CAS 2011 Proceedings (2011 International Semiconductor Conference)最新文献

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Experimental studies of silicon nitride waveguides fabrication 氮化硅波导制备的实验研究
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095719
M. Kusko, A. Avram, A. Dinescu, C. Kusko, F. Comanescu, Carmen Iorga, R. Muller
{"title":"Experimental studies of silicon nitride waveguides fabrication","authors":"M. Kusko, A. Avram, A. Dinescu, C. Kusko, F. Comanescu, Carmen Iorga, R. Muller","doi":"10.1109/SMICND.2011.6095719","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095719","url":null,"abstract":"In this paper are summarized the results of the experimental studies regarding the fabrication of silicon nitride waveguides with applications in biosensing. The waveguides have been fabricated with electron beam lithography and reactive ion etching using PMMA and metallic mask, respectively. Surface quality after etching process and the etching rate are evaluated with characterization tools like AFM, SEM and optical thin film metrology. From our studies we conclude that the use of a metallic mask is beneficial for obtaining high quality waveguides with small dimensions.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115048089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New concepts for IT-DRAMs: Overcoming the scaling limits it - dram的新概念:克服扩展限制
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095698
N. Rodriguez, S. Cristoloveanu, F. Gámiz
{"title":"New concepts for IT-DRAMs: Overcoming the scaling limits","authors":"N. Rodriguez, S. Cristoloveanu, F. Gámiz","doi":"10.1109/SMICND.2011.6095698","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095698","url":null,"abstract":"Capacitorless Single-Transistor DRAM cells (IT-DRAM) are attractive for the replacement of the highly complex standard DRAM cells based on the combination of a transistor and a capacitor. However, their implementation is questioned mainly due to scalability concerns in ultrathin silicon films. In this paper, we will present new concepts of IT-DRAM memory cells based on multi-body architectures that are able to fulfil the scalability requirements of advanced technology nodes. The proposed devices, belonging to the A-RAM family, feature enhanced resolution between ‘0’ and ‘1’ states as well as very low bias operation.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116933138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Dielectric behaviour of polyperyleneimide films 聚苯乙烯酰亚胺薄膜的介电性能
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095795
M. Damaceanu, R. Rusu, M. Brumǎ
{"title":"Dielectric behaviour of polyperyleneimide films","authors":"M. Damaceanu, R. Rusu, M. Brumǎ","doi":"10.1109/SMICND.2011.6095795","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095795","url":null,"abstract":"Thermostable polyimides based on perylenetetracarboxylic dianhydride and aromatic diamines containing oxadiazole rings were prepared and thin films were made therefrom. Dark-red, opaque coatings resulted having strong adhesion to the glass support. The composition of these polyimide films was analysed using X-ray photoelectron spectroscopy (XPS). The dynamo-mechanical and dielectric behaviour of the polyimide films were investigated, as well.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128686767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Amino groups-based polymers for CO2 detection; A comparison between two sensing mechanism models 基于氨基的CO2检测聚合物;两种传感机制模型的比较
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095734
B. Șerban, A. Kumar, M. Brezeanu, C. Cobianu, O. Buiu, C. Bostan, N. Varachiu, S. Costea
{"title":"Amino groups-based polymers for CO2 detection; A comparison between two sensing mechanism models","authors":"B. Șerban, A. Kumar, M. Brezeanu, C. Cobianu, O. Buiu, C. Bostan, N. Varachiu, S. Costea","doi":"10.1109/SMICND.2011.6095734","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095734","url":null,"abstract":"Two CO2 sensing mechanisms, based on the Hard Soft Acids Bases (HSAB) and Bronsted-Lowry theories, are discussed and compared. They are evaluated by selecting amino groups-based coating layers, which are deposited on Surface Acoustic Wave (SAW) devices for CO2 detection. Experimentally measured CO2 sensitivities of different coating layers, such as polyallylamine (PAA), polyethyleneimine (PEI), nanocomposite matrix based on PAA-aminocarbon nanotubes and PEI-aminocarbon nanotubes, emeraldine, 4-sulfocalix[4]arene-doped polyaniline, matrix based emeraldine and carbonic anhydrase (PACA) are compared and evaluated according to their corresponding sensing mechanism.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129658061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanostructured indium phosphide used in electrowetting system for biosensor applications 纳米磷化铟在生物传感器电润湿系统中的应用
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095780
L. Sirbu, I. Voda, D. Esinenco, R. Muller, R. Voicu, M. Danila, L. Ghimpu, I. Tiginyanu, V. Ursaki
{"title":"Nanostructured indium phosphide used in electrowetting system for biosensor applications","authors":"L. Sirbu, I. Voda, D. Esinenco, R. Muller, R. Voicu, M. Danila, L. Ghimpu, I. Tiginyanu, V. Ursaki","doi":"10.1109/SMICND.2011.6095780","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095780","url":null,"abstract":"We demonstrated the fabrication of complex nanostructured InP membranes with porous compact packed structure that have been cut during electrochemical etching in the same anodic process. The membranes were filled with optically transparent compounds. We considered the covering of the nanoporous film and filling the pores with polymers imprinted with nano metallic particles in order to stabilize and adjust the sensor characteristics for specific biological samples. Also we designed and fabricated lab-on-a-chip devices based on Si which can be used for transporting bio-samples to the detector by means of electrowetting method. The experimental study and emulations based on Finite Element Model (FEM) show also that the obtained materials are promising for nonlinear optical applications, in particular for the development of electrowetting systems for MEMS, MOEMS, etc.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127861374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A flexible technology platform for the fabrication of RF-MEMS devices RF-MEMS器件制造的柔性技术平台
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095744
F. Giacomozzi, V. Mulloni, S. Colpo, J. Iannacci, B. Margesin, A. Faes
{"title":"A flexible technology platform for the fabrication of RF-MEMS devices","authors":"F. Giacomozzi, V. Mulloni, S. Colpo, J. Iannacci, B. Margesin, A. Faes","doi":"10.1109/SMICND.2011.6095744","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095744","url":null,"abstract":"The paper reports about the technology platform for the fabrication of RF-MEMS devices developed at FBK. The most important process features, requirements and possible applications are presented and described. The basic fabrication process, together with some of the more important process variations and its capabilities are reported. Finally, some examples of produced devices and their performances are briefly presented.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126686227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Photo-catalytic oxidation of 4-chlorophenol using TiO2-functionalized membranes 二氧化钛功能化膜光催化氧化4-氯苯酚
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095702
C. Orbeci, G. Nechifor, I. Untea
{"title":"Photo-catalytic oxidation of 4-chlorophenol using TiO2-functionalized membranes","authors":"C. Orbeci, G. Nechifor, I. Untea","doi":"10.1109/SMICND.2011.6095702","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095702","url":null,"abstract":"This work presents a hybrid method for advanced removal of 4-chlorophenol from water by combining the membrane and photo-catalytic processes. The hybrid method consists of photo-catalytic oxidation procedure using a photo-catalytic reactor equipped with a TiO2-functionalized membrane obtained by the sol-gel method. The photo-catalytic activity is dependent on the alcohol solvent type used for synthesis, which determines the TiO2 deposition and characteristics. At higher reaction time, the regenerated cellulose membrane becomes slightly unstable due to UV radiations and a strong oxidizing potential of the reaction medium.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114074739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inverter-based ultra low voltage differential amplifiers 基于逆变器的超低电压差分放大器
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095811
R. Vieru, R. Ghinea
{"title":"Inverter-based ultra low voltage differential amplifiers","authors":"R. Vieru, R. Ghinea","doi":"10.1109/SMICND.2011.6095811","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095811","url":null,"abstract":"This paper presents a new approach to design ultra low voltage fully-differential amplifiers, using CMOS inverter as a basic design element. With this technique, various circuit topologies, easily scalable to meet different constraints, were derived. Taking also the advantage of the full device control offered by a triple well technology, such amplifiers may be designed to operate at very low supply voltages. Three amplifier topologies, operating rail-to-rail at 0.6V supply voltage, are presented. These circuits were designed in a triple-well 0.18μm CMOS process with Vthn, p ≈ 0.4V and are intended for use in ultra low voltage delta-sigma modulators.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116213716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Miniaturized and reconfigurable filters for advanced communication systems 用于先进通信系统的小型化和可重构滤波器
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095699
R. Sorrentino, L. Pelliccia, S. Bastioli
{"title":"Miniaturized and reconfigurable filters for advanced communication systems","authors":"R. Sorrentino, L. Pelliccia, S. Bastioli","doi":"10.1109/SMICND.2011.6095699","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095699","url":null,"abstract":"New concepts are presented for both miniaturized and MEMS-based reconfigurable waveguide filters. The ultimate goal is to reduce size of telecommunication systems without compromising the high unloaded Q required in such applications. One class of miniaturized filters is based on ridges arbitrarily located and oriented within a waveguide allowing for pseudo-elliptic filter responses; the other one is based on cavities employing TM modes as building blocks to obtain Nth order filters with N transmission zeros. Three new concepts have then been developed for high-Q (>1000) bandpass waveguide filters with tunable central frequency or bandwidth using RF MEMS switches.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115258698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication of through-wafer interconnections by gold electroplating 电镀金制造晶圆互连
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095746
D. Vasilache, S. Colpo, F. Giacomozzi, B. Margesin, M. Chistè
{"title":"Fabrication of through-wafer interconnections by gold electroplating","authors":"D. Vasilache, S. Colpo, F. Giacomozzi, B. Margesin, M. Chistè","doi":"10.1109/SMICND.2011.6095746","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095746","url":null,"abstract":"A new method for conductive via's using gold electroplating is presented. Tapered walls through wafer via (TWV) holes were made using a variable isotropy DRIE process, with a very good control over the obtained angles — angles of 11.3° and 21.8° were obtained with errors smaller than 10%. Barrier and seed layers were deposited in via's performed by PVD (Physical Vapor Deposition) techniques with a very good coverage of the walls. Finally, gold electroplating was used to fill the narrow part of via's.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121581348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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