发布求助
文献互助 智能选刊 最新文献

CAS 2011 Proceedings (2011 International Semiconductor Conference)最新文献

筛选
英文 中文
Backus language for functional nano-devices 用于功能纳米器件的Backus语言
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095808
M. Malita, G. Stefan
{"title":"Backus language for functional nano-devices","authors":"M. Malita, G. Stefan","doi":"10.1109/SMICND.2011.6095808","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095808","url":null,"abstract":"The emergent nano-technologies must be used to design functional nano-devices with complexity in the range of their size. The way to achieve this goal is to define parallel programmable engines. The concept of FP System, introduced by John Backus in 1978, is used to define a high level architectural environment: Backus-Connex Parallel Functional Programming System. The functional forms of FP Systems correspond perfect with the four types of parallelism derived for ConnexArray™ from the Kleene's computational model. The paper defines the BC programming environment, describes its implementation in Scheme and presents its use for developing real applications for functional nano-devices.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124517065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Laser ablated millimeter wave metamaterial antenna 激光烧蚀毫米波超材料天线
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095753
A. Bunea, F. Craciunoiu, M. Zamfirescu, R. Dabu, G. Sajin
{"title":"Laser ablated millimeter wave metamaterial antenna","authors":"A. Bunea, F. Craciunoiu, M. Zamfirescu, R. Dabu, G. Sajin","doi":"10.1109/SMICND.2011.6095753","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095753","url":null,"abstract":"This paper presents the design, fabrication and characterization of a zeroth order resonance Composite Right / Left-Handed (CRLH) coplanar waveguide (CPW) antenna on high resistivity silicon substrate, working at 38 GHz. The technological process consisted of a combination of classic photolithography and laser ablation. Laser microprocessing was chosen for the processing of 7 μm wide gaps in the Au/Cr metal layer. Experimental results show RL < −38 dB / 38.82 GHz, the −3 dB beamwidth of the radiation lobe of approx. 17° (in the transversal plane) and a computed maximum gain of 1.75 dBi / 38.82 GHz.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124482357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis and characterization of Congo red adsorbed onto titanium dioxide-iron composite 刚果红吸附二氧化钛-铁复合材料的合成与表征
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095778
V. Luntraru, L. Ghindeanu, E. Vasile, A. Nechifor
{"title":"Synthesis and characterization of Congo red adsorbed onto titanium dioxide-iron composite","authors":"V. Luntraru, L. Ghindeanu, E. Vasile, A. Nechifor","doi":"10.1109/SMICND.2011.6095778","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095778","url":null,"abstract":"This paper presents the synthesis and characterization of a new material: an iron/titanium dioxide composite (obtained by a novel method from colloidal iron and titanium tetrabutoxide) with a dye (Congo red) adsorbed onto the composites surface. The new synthesized materials were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy and Energy-Dispersive X-ray spectroscopy.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133475435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 0.18μm CMOS low power LNA for 6–8.5 GHz UWB receivers 用于6-8.5 GHz UWB接收机的0.18μm CMOS低功耗LNA
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095762
A. Djugova, J. Radic, M. Videnovic-Misic
{"title":"A 0.18μm CMOS low power LNA for 6–8.5 GHz UWB receivers","authors":"A. Djugova, J. Radic, M. Videnovic-Misic","doi":"10.1109/SMICND.2011.6095762","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095762","url":null,"abstract":"This paper presents the design of an ultra-wideband (UWB) low noise amplifier (LNA) in 0.18μm CMOS technology. Proper input matching is achieved with inductive degenerated amplifier circuit modified with resistive feedback. To provide good isolation and stability, cascode amplifier, as a first amplifying stage, is used. Additional common source stage is introduced by using current reuse technique. Operated at 1.8 V LNA consumes only 5.26 mW. The simulation results show maximum power gain of 14.3 dB, while the input and output return loss is less than −10 dB, within the bandwidth from 6 to 8.5 GHz. The noise figure of the LNA varies from 3.9 to 6.8 dB.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126014209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and in vitro testing of porous silicon microcarriers 多孔硅微载体的制备及体外测试
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095730
A. Bragaru, M. Kusko, M. Simion, A. Iordanescu, R. Pascu, B. M. Danila, F. Craciunoiu, M. Diaconu
{"title":"Fabrication and in vitro testing of porous silicon microcarriers","authors":"A. Bragaru, M. Kusko, M. Simion, A. Iordanescu, R. Pascu, B. M. Danila, F. Craciunoiu, M. Diaconu","doi":"10.1109/SMICND.2011.6095730","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095730","url":null,"abstract":"Porous materials have been used over a decade in tissue engineering and drug delivery. The aim of this study was to prepare porous silicon microparticles with suitable dimensions for using as drug microcarriers. Two types of anticancer drugs, dacarbazine and bleomycine, have been loaded into these systems for in vitro drug release tests carried out by high pressure liquid chromatography (HPLC) method.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114413027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
ZnO thin films formed from ZnN target by RF sputtering: From materials to devices 射频溅射制备ZnO薄膜:从材料到器件
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095792
V. Kampylafka, A. Kostopoulos, M. Androulidaki, K. Tsagaraki, M. Modreanu, E. Aperathitis
{"title":"ZnO thin films formed from ZnN target by RF sputtering: From materials to devices","authors":"V. Kampylafka, A. Kostopoulos, M. Androulidaki, K. Tsagaraki, M. Modreanu, E. Aperathitis","doi":"10.1109/SMICND.2011.6095792","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095792","url":null,"abstract":"In this work a single ZnN sputtering target was used to fabricate n-and p-type transparent films, namely: (a) n-ZnN thin films in pure Ar plasma and (b) p-ZnO:N films in Ar-O2 plasma. The structural, optical and electrical properties of the films were investigated. Zinc nitride films deposited in pure Ar were n-type, with low resistivity. Films deposited in more than 40% O2 in plasma were p-type ZnO films. A thin film transistor having zinc nitride as channel layer as well as n-ZnN/p-ZnO and p/n ZnO diodes in a single deposition run were fabricated and characterized.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"442 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116077855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanofibrous zinc oxide films synthesized by magnetron sputtering 磁控溅射制备纳米纤维氧化锌薄膜
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095776
L. Ghimpu, O. Lupan, S. Popescu, V. Ursaki, I. Tiginyanu, L. Chow, G. Chai, S. Park, A. Schulte
{"title":"Nanofibrous zinc oxide films synthesized by magnetron sputtering","authors":"L. Ghimpu, O. Lupan, S. Popescu, V. Ursaki, I. Tiginyanu, L. Chow, G. Chai, S. Park, A. Schulte","doi":"10.1109/SMICND.2011.6095776","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095776","url":null,"abstract":"ZnO nanofibrous-based materials required for sensors and dye-solar cells have been grown on tin oxide/glass substrates by magnetron sputtering. Synthesis regimes have been identified that give nanoporous and nanofibrous morphologies of depositions as shown by SEM. The structural properties of the nanomaterial have been characterized by X-ray diffraction. Vibrational properties have been investigated by Micro-Raman spectroscopy. All experimental data are discussed in details and promising applications are suggested.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132508719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comparative study of computation models for dynamic behaviour of MEMS structures MEMS结构动力性能计算模型的比较研究
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095827
G. Ionascu, A. Sandu, L. Bogatu, C. Comeaga, E. Manea, D. Besnea
{"title":"A comparative study of computation models for dynamic behaviour of MEMS structures","authors":"G. Ionascu, A. Sandu, L. Bogatu, C. Comeaga, E. Manea, D. Besnea","doi":"10.1109/SMICND.2011.6095827","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095827","url":null,"abstract":"A comparative study of computation models for predicting the vibration modes of some MEMS structures of cantilever type — as suspension arms of the inertial mass of a bulk-micromachined silicon accelerometer, reported to the experimentally measured values of resonance (natural) frequencies, is presented in this paper. The most appropriate values of silicon Young's modulus depending on the crystal orientation of the structure and the type of model, including also the dynamic Young's modulus determined by the authors, have been inferred.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128786432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface mounted assembly of SIW circuits for flexible communication applications 用于灵活通信应用的SIW电路的表面安装组装
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095761
V. Buiculescu, S. Costovici
{"title":"Surface mounted assembly of SIW circuits for flexible communication applications","authors":"V. Buiculescu, S. Costovici","doi":"10.1109/SMICND.2011.6095761","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095761","url":null,"abstract":"The paper presents a new connection topology intended for flexible integration of substrate-integrated waveguide (SIW) components, based on a building blocks concept. This connection type was experimentally validated on a model made of FR-4 substrate, by using printed circuit board (PCB) technology, with a bandwidth exceeding the regular 5 GHz unlicensed telecommunications frequency range. The measured results are in excellent agreement with simulated two-port parameters. The transition geometry is compatible with surface mounted technology (SMT).","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129821227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Counter-propagating soliton interactions in photorefractive InP:Fe semiconductor 光折变InP:Fe半导体中的反传播孤子相互作用
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095843
D. Tranca, P. Schiopu
{"title":"Counter-propagating soliton interactions in photorefractive InP:Fe semiconductor","authors":"D. Tranca, P. Schiopu","doi":"10.1109/SMICND.2011.6095843","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095843","url":null,"abstract":"Interactions between two counter-propagating self-trapped beams at infrared wavelengths are experimentally observed in bulk photorefractive semiconductor material InP:Fe. The experimental results are in good concordance with computer simulations. Using these simulations we show that it is possible to develop optical interconnections based on waveguides induced by soliton interactions in a bulk semiconductor material.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127346219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书