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CAS 2011 Proceedings (2011 International Semiconductor Conference)最新文献

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Electromagnetic band gap CNT based resonator for DNA detection 用于DNA检测的电磁带隙碳纳米管谐振器
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095726
A. Cismaru, M. Voicu, A. Radoi, A. Dinescu, D. Neculoiu, M. Dragoman
{"title":"Electromagnetic band gap CNT based resonator for DNA detection","authors":"A. Cismaru, M. Voicu, A. Radoi, A. Dinescu, D. Neculoiu, M. Dragoman","doi":"10.1109/SMICND.2011.6095726","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095726","url":null,"abstract":"The paper presents measurements of microwave propagation in electromagnetic band gap (EMBG) CNTs based resonator for DNA detection. A new EMBG structure with coupled lines as a defect in the structure in order to obtain a EMBG resonator is proposed. We report on sensing of DNA wrapped on multi walled carbon nanotubes (CNTs) deposited over a coupled lines area of EMBG resonator. The DNA is revealed by a shift of the resonance frequency and an averaged phase shift of 20 degrees for a broadband frequency range of 6–20 GHz.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134313027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solvothermal synthesis of lead telluride micro- and nanocrystals 溶剂热合成碲化铅微晶和纳米晶
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095785
T. Gutsul, A. Nicorici, A. Todosiciuc
{"title":"Solvothermal synthesis of lead telluride micro- and nanocrystals","authors":"T. Gutsul, A. Nicorici, A. Todosiciuc","doi":"10.1109/SMICND.2011.6095785","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095785","url":null,"abstract":"Single-crystalline nanoparticles and rod-shaped lead telluride microparticles were obtained using solvothermal synthesis. It is shown that the reaction temperature, time of the synthesis, and precursor molar ratio make it possible to tune the shape and size of nanocrystals. X-Ray powder diffraction with transmission electron microscopy was used to confirm the crystallinity and morphology of nanoparticles obtained. The temperature dependence of the electric conductivity was also measured, and its values are close to values of bulk PbTe.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114556741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FEM analysis of GaN based surface acoustic wave resonators 氮化镓表面声波谐振器的有限元分析
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095751
A. Stefanescu, A. Muller, A. Dinescu, G. Konstantinidis, A. Cismaru, A. Stavrinidis, D. Neculoiu
{"title":"FEM analysis of GaN based surface acoustic wave resonators","authors":"A. Stefanescu, A. Muller, A. Dinescu, G. Konstantinidis, A. Cismaru, A. Stavrinidis, D. Neculoiu","doi":"10.1109/SMICND.2011.6095751","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095751","url":null,"abstract":"For the integration of surface acoustic wave (SAW) devices with nanostructures, numerical simulations must be employed. This paper describes finite element (FEM) models for a basic periodic cell of two types of SAW devices on GaN/Si devoted for GHz applications. E-beam lithographical techniques have been used for IDT fingers of 200nm wide. On wafer measurements of S parameters have shown a good agreement with the simulation results regarding the operation frequency.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124819712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermoelectric performance of electrons in ballistic graphene ribbons 弹道石墨烯带中电子的热电性能
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095709
G. Kliros, P. Divari
{"title":"Thermoelectric performance of electrons in ballistic graphene ribbons","authors":"G. Kliros, P. Divari","doi":"10.1109/SMICND.2011.6095709","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095709","url":null,"abstract":"We present an analytical model based on linear response theory and the Landauer formalism in order to calculate the electrical conductivity, thermopower and thermal conductivity of ballistic graphene ribbons and clarify both the temperature and Fermi-level dependences. The electronic figure of merit ZTel as an upper limit of the thermoelectric efficiency of short and wide graphene ribbons is investigated over a broad range of temperatures.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125023695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Zero-order resonant metamaterial antenna 零阶谐振超材料天线
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095754
A. B. Ochetan, M. Banciu, G. Lojewski
{"title":"Zero-order resonant metamaterial antenna","authors":"A. B. Ochetan, M. Banciu, G. Lojewski","doi":"10.1109/SMICND.2011.6095754","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095754","url":null,"abstract":"In this paper we present a resonant antenna based on a composite right/left handed metamaterial structure. The antenna is designed to operate at the zero-order resonance. The antenna was fabricated and used in measuring the coverage of a UMTS cell.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121716571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel approach for the synthesis of composite right/left-handed circuits 一种合成左/右复合电路的新方法
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095758
G. Bartolucci, S. Simion, R. Marcelli
{"title":"A novel approach for the synthesis of composite right/left-handed circuits","authors":"G. Bartolucci, S. Simion, R. Marcelli","doi":"10.1109/SMICND.2011.6095758","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095758","url":null,"abstract":"A semi-lumped Composite Right/Left-Handed (CRLH) equivalent circuit is proposed and analysed, then a CRLH design method is presented. This equivalent circuit use a transmission line which replace the inductance of the series resonator from the fully lumped CRLH equivalent circuit, but also contains a parallel lumped resonator. A CRLH structure is designed following the proposed method and then it is analysed numerically. It is shown the results are in very good agreement with the expected ones.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125178015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The non-linear behavior of the Nothing On Insulator NOI nanotransistor from theoretical and numerical studies 从理论和数值研究无绝缘体NOI纳米晶体管的非线性行为
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095816
C. Ravariu, A. Rusu
{"title":"The non-linear behavior of the Nothing On Insulator NOI nanotransistor from theoretical and numerical studies","authors":"C. Ravariu, A. Rusu","doi":"10.1109/SMICND.2011.6095816","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095816","url":null,"abstract":"A brief presentation of the NOI — Nothing On Insulator — nanotransistor, followed by two theoretical points of view concerning the NOI-FET non-linearity are presented in this paper. The main target is to prove the NOI nanotransistor affiliation to the FETs family, monitoring the gate-control on the drain current. The drain current is activated by the VDS voltage under tunneling conditions. The gate terminal modulates the carriers concentration and consequently the drain current flow. Secondary, a new model parameter comes to complete the NOI-FET theory. The third order derivative was used for the extraction of a threshold drain-source voltage that splits the work domain in two conduction regions: weak and strong.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123644793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epoxy — Nano-carbon shielding coating for super-high-frequency range 用于超高频范围的环氧纳米碳屏蔽涂层
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095712
S. Bellucci, L. Coderoni, F. Micciulla, I. Sacco, G. Rinaldi, P. Kuzhir, A. Paddubskaya, M. Shuba, S. Maksimenko, J. Macutkevič, D. Seliuta, G. Valušis, R. Adomavičius, J. Banys
{"title":"Epoxy — Nano-carbon shielding coating for super-high-frequency range","authors":"S. Bellucci, L. Coderoni, F. Micciulla, I. Sacco, G. Rinaldi, P. Kuzhir, A. Paddubskaya, M. Shuba, S. Maksimenko, J. Macutkevič, D. Seliuta, G. Valušis, R. Adomavičius, J. Banys","doi":"10.1109/SMICND.2011.6095712","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095712","url":null,"abstract":"Analysis on electromagnetic (EM) response properties of Modified Bisphenol A Epoxy Resin loaded with various types of commercial fillers, Multi-Wall CNTs (MWNTs), Single-Wall CNTs (SWNT), Carbon Black was made. The EM attenuation and reflection in Ka-band (26–37 GHz) provided by resin/SWCNT were measured as a function of the functional filler content (up to 1.5wt.%) and the EM coating thickness. A high THz attenuation ability is demonstrated in the range 0.2–3 THz by the CNT-based samples The transmission at 1 THz through the sample containing 0.5 wt.% of SWNT inclusions is 12 times less than through pure resin, and 3 times less in the case of MWNT incorporation. In the far-infrared frequency range (3–18 THz) a small reflection of the THz signal was observed (up to 5%) for all types of nanocarbon inclusions. The maximal reflection is demonstrated by the net epoxy resin, which denotes a strong screening effect of the given matrix. [1, 2].","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116771832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Two dimensional phononic band-gap materials for surface acoustic wave devices 表面声波器件用二维声子带隙材料
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095723
C. Pachiu, V. Moagar-Poladian, F. Comanescu, J. Izbicki
{"title":"Two dimensional phononic band-gap materials for surface acoustic wave devices","authors":"C. Pachiu, V. Moagar-Poladian, F. Comanescu, J. Izbicki","doi":"10.1109/SMICND.2011.6095723","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095723","url":null,"abstract":"The success of photonic crystals in the development of new microelectronic devices involves the increasing interest in developing new similar materials with acoustic properties called Phonon Crystals. The possibility of direct excitation of the surface waves on a piezoelectric material make them an interesting basis for phononic crystals used in devices for acousto-optical signal processing. This study is aimed at developing a numerical two-dimensional phononic band-gap structures consisting of different piezoelectric materials. We report the existence of the frequency band gap for surface waves in a phononic structure consisting in a square array of circular vacuum holes in a Silicon and Lithium niobate slab, after a theoretically and analytically procedure using the Plane-wave-expansion Method.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121264290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Oxygen sensor for indirect calorimetry based on Ruthenium fluorescence quenching 基于钌荧光猝灭的间接量热氧传感器
CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI: 10.1109/SMICND.2011.6095733
L. Pirrami, J. Wicht, F. Debrot, A. Rosspeintner, E. Vauthey, J. Aebischer, M. Mazza
{"title":"Oxygen sensor for indirect calorimetry based on Ruthenium fluorescence quenching","authors":"L. Pirrami, J. Wicht, F. Debrot, A. Rosspeintner, E. Vauthey, J. Aebischer, M. Mazza","doi":"10.1109/SMICND.2011.6095733","DOIUrl":"https://doi.org/10.1109/SMICND.2011.6095733","url":null,"abstract":"Estimation of the body energy expenditure is a key issue for monitoring and understanding obesity and other nutritional problems. Indirect calorimetry estimation, based on oxygen and carbon dioxide measurements, is the only way to achieve this result. In this paper a compact yet efficient oxygen sensor is presented as a key component for this application. Ruthenium fluorescence is used as sensing element due to the strong quenching effect in presence of oxygen. An FPGA-based TDC and data retriever have been implemented granting a high degree of freedom in terms of tunability and resolution.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126478743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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