基于比较器的弛豫振荡器的非理想特性

CAS 2011 Proceedings (2011 International Semiconductor Conference) Pub Date : 2011-12-08 DOI:10.1109/SMICND.2011.6095818

M. Pistol, M. Mocanu, R. Ghinea, L. Goras

{"title":"基于比较器的弛豫振荡器的非理想特性","authors":"M. Pistol, M. Mocanu, R. Ghinea, L. Goras","doi":"10.1109/SMICND.2011.6095818","DOIUrl":null,"url":null,"abstract":"The non-ideal behaviour of a classical comparator-based first-order relaxation oscillator is analysed. The influences of the comparator slew-rate and output resistance as well as the parasitic resistances of the reactive element are considered. Numerical simulations at system level and transistor level are given.","PeriodicalId":403202,"journal":{"name":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Non-ideal behavior of a comparator-based relaxation oscillator\",\"authors\":\"M. Pistol, M. Mocanu, R. Ghinea, L. Goras\",\"doi\":\"10.1109/SMICND.2011.6095818\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The non-ideal behaviour of a classical comparator-based first-order relaxation oscillator is analysed. The influences of the comparator slew-rate and output resistance as well as the parasitic resistances of the reactive element are considered. Numerical simulations at system level and transistor level are given.\",\"PeriodicalId\":403202,\"journal\":{\"name\":\"CAS 2011 Proceedings (2011 International Semiconductor Conference)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2011 Proceedings (2011 International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2011.6095818\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2011 Proceedings (2011 International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2011.6095818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

分析了基于比较器的经典一阶弛豫振荡器的非理想特性。同时考虑了比较器转速、输出电阻以及反应式元件寄生电阻的影响。给出了系统级和晶体管级的数值模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Non-ideal behavior of a comparator-based relaxation oscillator

The non-ideal behaviour of a classical comparator-based first-order relaxation oscillator is analysed. The influences of the comparator slew-rate and output resistance as well as the parasitic resistances of the reactive element are considered. Numerical simulations at system level and transistor level are given.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

CAS 2011 Proceedings (2011 International Semiconductor Conference)

自引率

0.00%

发文量