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2012 5th International Conference on Computers and Devices for Communication (CODEC)最新文献

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Numerical computation of eigenenergy and intersubband transition energy of GaAs triangular nanowire embedded in AlxGa1−xAs rectangular wire 嵌入AlxGa1−xAs矩形线的GaAs三角形纳米线的特征能和子带间跃迁能的数值计算
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509258
A. Deyasi, S. Bhattacharyya, N. Das
{"title":"Numerical computation of eigenenergy and intersubband transition energy of GaAs triangular nanowire embedded in AlxGa1−xAs rectangular wire","authors":"A. Deyasi, S. Bhattacharyya, N. Das","doi":"10.1109/CODEC.2012.6509258","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509258","url":null,"abstract":"Energy eigenvalues and intersubband transition energies of a triangular quantum wire have been numerically computed by solving time-independent Schrödinger's equation with appropriate boundary conditions using finite difference technique for the lowest three eigenstates. Triangular wire is made of GaAs material, which is embedded in a rectangular wire of AlxGa1−xAs. Composition of AlxGa1−xAs is varied to study energy profile and intersubband transition energies of the wire. Dimensional effect is also studied by varying width and height of the triangular wire. The study is carried out taking into consideration conduction band discontinuity and effective mass mismatch at boundaries. Fine optical tuning for quantum wire laser is possible through proper selection of material composition and dimension of the wire.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121609789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic characteristics of vibratory Gyro-accelerometer 振动式陀螺加速度计的动态特性
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509277
P. Verma, R. Gopal, S. Arya
{"title":"Dynamic characteristics of vibratory Gyro-accelerometer","authors":"P. Verma, R. Gopal, S. Arya","doi":"10.1109/CODEC.2012.6509277","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509277","url":null,"abstract":"Thispaper presents a systematic approach inreaching governing equation for microgyroaccelerometer. The study is focused on to analyze the dynamic characteristics of vibratory microgyroaccelerometer. In this device, the mechanical structure is excited into oscillatory motion. The angular velocity input to the sensor is then multiplied by the periodic driven motion. A demodulation is required to recover the angular velocity input and linear acceleration from the sense responses, as the governing differential equations for the Gyro-accelerometer input and output are time variant. The frequency responses for the time variant linear system is obtained through the demodulation and low pass filtered steady-state output to sinusoidal excitation. The frequency response, thus, obtained are validated with MATLAB Simulink data.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124519335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
An analytical modeling of interface charge induced effects on subthreshold current and subthreshold swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs 界面电荷对应变硅(s-Si)在绝缘子上硅锗(SGOI) mosfet上亚阈值电流和亚阈值摆幅影响的分析建模
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509255
M. Kumar, S. Dubey, S. Jit, P. Tiwari
{"title":"An analytical modeling of interface charge induced effects on subthreshold current and subthreshold swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs","authors":"M. Kumar, S. Dubey, S. Jit, P. Tiwari","doi":"10.1109/CODEC.2012.6509255","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509255","url":null,"abstract":"A surface potential based two-dimensional (2-D) analytical model for subthreshold current and subthreshold swing including the hot carrier induced interface charges effect of strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs is presented. The analytical model takes into account the effects of all device parameters along with Ge mole fraction in the relaxed Si1-xGex layer, interface charge density and length of damaged region on subthreshold characteristics. For the validation of the proposed model, the model results are compared with numerical simulation results obtained from 2-D device simulator ATLAS by Silvaco.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124075655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation to study the effect of variation of oxide thickness and substrate doping on DIBL in MOSFET 模拟研究了氧化物厚度变化和衬底掺杂对MOSFET中DIBL的影响
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509251
S. Das, S. Kundu
{"title":"Simulation to study the effect of variation of oxide thickness and substrate doping on DIBL in MOSFET","authors":"S. Das, S. Kundu","doi":"10.1109/CODEC.2012.6509251","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509251","url":null,"abstract":"In this work, the Drain Induced Barrier Lowering is studied as the function of oxide thickness and substrate doping. The effects are verified simulating with TCAD Sentaurus toolkit. High-K dielectric material is used in place of SiO2. Also investigation of the effect of change in substrate doping on Drain Induced Barrier Lowering is studied.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126362605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of polysilicon gate doping concentration variation on MOSFET characteristics 多晶硅栅掺杂浓度变化对MOSFET特性的影响
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509245
R. Dutta, S. Kundu
{"title":"Effect of polysilicon gate doping concentration variation on MOSFET characteristics","authors":"R. Dutta, S. Kundu","doi":"10.1109/CODEC.2012.6509245","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509245","url":null,"abstract":"Polysilicon gates have replaced the metal gates in CMOS technology. If the doping is not high enough in polysilicon then the flatband voltage should be corrected. Polysilicon gates are also depleted with the application of gate voltage. The dependence of MOSFET current (Ids) on polysilicon gate concentration is studied using the results simulated by Sentaurus TCAD tool in case of N channel MOSFETs. With the decrease in polysilicon gate doping concentration (Nd), the drain current is more degraded. A theory is developed, in order to explain the simulation results that take into consideration the correction in flatband voltage and the voltage drop due to polysilicon depletion. From the analysis of simulated and theoretical curves, an inversion region is suspected to occur at the polysilicon gate for low doping concentration at high gate voltage.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130111987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Drift and temperature compensation scheme for an intelligent ion-sensitive field effect transistor sensory system 一种智能离子敏感场效应晶体管传感系统的漂移和温度补偿方案
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509240
M. Das, M. Bhuyan
{"title":"Drift and temperature compensation scheme for an intelligent ion-sensitive field effect transistor sensory system","authors":"M. Das, M. Bhuyan","doi":"10.1109/CODEC.2012.6509240","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509240","url":null,"abstract":"A new intelligent drift and temperature compensation technique leading the conventional ISFET to an Intelligent one is reported in this piece of work. The theoretical compensation model studied here is based on the predefined experimental time dependent and temperature dependent rates and threshold voltages of all the pH values at different temperatures of the ISFET sensor under study. A temperature sensor is also used in this scheme to monitor the temperature variation of the measured environment.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design of a wide band Frequency Selective Surface (FSS) for multiband operation of reflector antenna 用于反射天线多波段工作的宽带频率选择面设计
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509202
G. Sen, Tanumay Mandal, S. Majumdar, Susanta Mahato, Surajit Mondal, P. Sarkar
{"title":"Design of a wide band Frequency Selective Surface (FSS) for multiband operation of reflector antenna","authors":"G. Sen, Tanumay Mandal, S. Majumdar, Susanta Mahato, Surajit Mondal, P. Sarkar","doi":"10.1109/CODEC.2012.6509202","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509202","url":null,"abstract":"This paper deals with the design of a Frequency Selective Surface (FSS) used as a sub reflector in a satellite. The FSS is designed by cutting slots in the square patch keeping same periodicity throughout. Frequency-selective surfaces are spatial filters which when incorporated as either flat or curved sub reflectors into a reflector antenna allows it to operate at a number of different frequency bands. This designed FSS structure has a wide stop band from 3.70GHz to 6.23GHz with percentage bandwidth of 51. Size reduction up to 83% is also achieved in this paper. Theoretical investigations have been done by Ansoft® designer software.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134579633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Radio environment characterization for radio communication and other applications in India 印度无线电通信和其他应用的无线电环境特性
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509344
S. K. Sarkar
{"title":"Radio environment characterization for radio communication and other applications in India","authors":"S. K. Sarkar","doi":"10.1109/CODEC.2012.6509344","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509344","url":null,"abstract":"The performance estimation of radio communication with high degree of accuracy is still not possible despite of intense research efforts over tropical region. On the basis of experimental measurements/observations, the radio researchers and users have developed empirical relationships and tried to utilize such results to similar geographical regions. But these relationships have to be tested with the data generated over different geographical locations in India before applying to the design and installation of communication and radar system.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131119095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
All optical 2-bit Carry Look Ahead Adder using Mach-Zehnder Interferometer 采用马赫-曾德干涉仪的全光学2位进位前视加法器
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509312
I. Jana, D. Gayen
{"title":"All optical 2-bit Carry Look Ahead Adder using Mach-Zehnder Interferometer","authors":"I. Jana, D. Gayen","doi":"10.1109/CODEC.2012.6509312","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509312","url":null,"abstract":"In future for high speed processing all-optical logic Carry Look Ahead (CLA) Adder is extremely important and it is proposed and described with the help of semiconductor optical amplifier (SOA) based Symmetric Mach Zehnder Interferometer (SMZI) switch. In this present communication, we have tried to design a all-optical circuit CLA adder circuit. Simulation of proposed design has also been reported.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133609338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nowcasting of tropical rain using dual frequency atmospheric brightness temperatures at Kolkata 利用双频大气亮温对加尔各答热带雨的临近预报
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509338
S. Das, R. Chakraborty, S. Talukdar, A. Maitra
{"title":"Nowcasting of tropical rain using dual frequency atmospheric brightness temperatures at Kolkata","authors":"S. Das, R. Chakraborty, S. Talukdar, A. Maitra","doi":"10.1109/CODEC.2012.6509338","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509338","url":null,"abstract":"Nowcasting of thunderstorm has important implication on minimizing the loss of properties and life. Conventional approaches for such purpose using radiometer measured brightness temperature of only water vapor line usually tend to overestimate the occurrence probability. In this paper, we demonstrate that use of brightness values of oxygen absorption lines in addition with the water vapor absorption lines can provide unique signature of heavy rain.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115382613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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