Drift and temperature compensation scheme for an intelligent ion-sensitive field effect transistor sensory system

Abstract

A new intelligent drift and temperature compensation technique leading the conventional ISFET to an Intelligent one is reported in this piece of work. The theoretical compensation model studied here is based on the predefined experimental time dependent and temperature dependent rates and threshold voltages of all the pH values at different temperatures of the ISFET sensor under study. A temperature sensor is also used in this scheme to monitor the temperature variation of the measured environment.